Abstract: A photolithography process includes providing a first test layout including test patterns, and a first light source; forming an initial mask layout according to the first test layout; forming a mask layout including mask layout patterns through an optical proximity correction or a phase-shifting masking; forming exposed patterns by exposing the mask layout using the first light source; and determining a weak region from the first test layout. A first distance between adjacent test patterns in the weak region is unequal to a second distance between corresponding exposed patterns. The photolithography process further includes performing a re-layout on the weak region to increase the first distance, thereby providing an adjusted test layout; performing a light-source optimization to obtain an adjusted light source; and determining the adjusted test layout and the adjusted light source as a second test layout and a second light source, respectively when process window requirements are satisfied.

Abstract: Methods for correcting target patterns and masks having corrected target patterns are provided. An exemplary correction method includes dividing contours of target patterns into fragments; performing an optical proximity correction to obtain mask patterns; obtaining simulated exposure patterns; detecting the simulated exposure patterns to find out existence of at least one weak point; determining a correction window in the target patterns; comparing the target patterns in the correction window with the simulated exposure patterns to obtain a position error of each fragment; calculating an effect value of a correction value of each fragment in the correction window on position errors of all fragments in the correction window; determining the correction value of each fragment according to the effect value of the correction value in the correction window on position errors of all fragments and the position error of each fragment; and obtaining corrected target patterns using the correction value.

Abstract: A correction method for a mask pattern is provided. The method includes providing a chip pattern region including a plurality of main features, and providing first auxiliary patterns around each main feature. The method also includes performing a first optical proximity correction to correct the main features into first correction features, and providing a plurality of detection regions. Each detection region is connected to an adjacent first correction feature via the first auxiliary pattern. In addition, the method includes performing an exposure process to obtain a light intensity distribution corresponding to each detection region after performing the exposure process. Moreover, the method includes correcting the first auxiliary patterns into second auxiliary patterns based on an auxiliary pattern correction model and the light intensity distribution of each detection region.

Abstract: A photolithography process includes providing a first test layout including test patterns, and a first light source; forming an initial mask layout according to the first test layout; forming a mask layout including mask layout patterns through an optical proximity correction or a phase-shifting masking; forming exposed patterns by exposing the mask layout using the first light source; and determining a weak region from the first test layout. A first distance between adjacent test patterns in the weak region is unequal to a second distance between corresponding exposed patterns. The photolithography process further includes performing a re-layout on the weak region to increase the first distance, thereby providing an adjusted test layout; performing a light-source optimization to obtain an adjusted light source; and determining the adjusted test layout and the adjusted light source as a second test layout and a second light source, respectively when process window requirements are satisfied.

Abstract: A correction method for a mask pattern is provided. The method includes providing a chip pattern region including a plurality of main features, and providing first auxiliary patterns around each main feature. The method also includes performing a first optical proximity correction to correct the main features into first correction features, and providing a plurality of detection regions. Each detection region is connected to an adjacent first correction feature via the first auxiliary pattern. In addition, the method includes performing an exposure process to obtain a light intensity distribution corresponding to each detection region after performing the exposure process. Moreover, the method includes correcting the first auxiliary patterns into second auxiliary patterns based on an auxiliary pattern correction model and the light intensity distribution of each detection region.

Abstract: Methods for correcting target patterns and masks having corrected target patterns are provided. An exemplary correction method includes dividing contours of target patterns into fragments; performing an optical proximity correction to obtain mask patterns; obtaining simulated exposure patterns; detecting the simulated exposure patterns to find out existence of at least one weak point; determining a correction window in the target patterns; comparing the target patterns in the correction window with the simulated exposure patterns to obtain a position error of each fragment; calculating an effect value of a correction value of each fragment in the correction window on position errors of all fragments in the correction window; determining the correction value of each fragment according to the effect value of the correction value in the correction window on position errors of all fragments and the position error of each fragment; and obtaining corrected target patterns using the correction value.