Abstract: The present disclosure provides a method for reducing or eliminating residual surface charge from a wafer during a semiconductor fabrication process. Because metal etching and photo resist ashing may result in a surface charge, performing a wet cleaning process directly after the ashing may increase corrosion to metal surfaces. This corrosion may be caused by an electro-chemical reaction that occurs between the surface charge and a solvent used in the wet cleaning process. To prevent this, the present disclosure introduces a water vapor treatment between the ashing and the wet cleaning processes. The water vapor treatment, which may be performed in-situ, provides an electrically neutral path that carries the surface charge from the surface of the wafer to electrical ground. By reducing or eliminating the surface charge, the water vapor treatment lessens or prevents corrosion to metal areas.