Abstract: A semiconductor substrate has a first dielectric layer positioned on the semiconductor substrate. At least one recess is formed in the first dielectric layer. Then a glue layer, a metal layer and a material layer, sealing an opening of the recess, are sequentially formed on the surface of the recess. Thereafter, a photo-etching-process is performed to form at least one metal interconnect in the glue layer, the metal layer and the material layer. The material layer that seals the opening of the recess is used to prevent portions of a photoresist layer from remaining in the recess during the photo-etching-process.