Patents by Inventor Yao Ning CHAN
Yao Ning CHAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220059727Abstract: The present disclosure provides a semiconductor device and a semiconductor component. The semiconductor device includes an active structure, a ring-shaped semiconductor contact layer, a first electrode, and an insulating layer. The active structure has a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer located between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer. The ring-shaped semiconductor contact layer is located on the second-conductivity-type semiconductor layer and having a first inner sidewall and a first outer sidewall. The first electrode has an upper surface and covers the ring-shaped semiconductor contact layer. The insulating layer covers the first electrode and the active structure and has a second inner sidewall and a second outer sidewall. The first inner sidewall is not flush with the second inner sidewall in a vertical direction.Type: ApplicationFiled: August 19, 2021Publication date: February 24, 2022Inventors: Hao-Chun Liang, Wei-Shan Yeoh, Yao-Ning Chan, Yi-Ming Chen, Shih-Chang Lee
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Publication number: 20210305456Abstract: The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface.Type: ApplicationFiled: March 24, 2021Publication date: September 30, 2021Inventors: Jian-Zhi CHEN, Yen-Chun TSENG, Hui-Fang KAO, Yao-Ning CHAN, Yi-Tang LAI, Yun-Chung CHOU, Shih-Chang LEE, Chen OU
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Patent number: 10738363Abstract: The present invention provides an analyzer for predicting a prognosis of cancer radiotherapy, including a detection device and an arithmetic device. In a specimen, expression levels of a plurality of microRNAs (miRNAs) can be detected by the detection device. The miRNAs includes hsa-miR-130a-3p, hsa-miR-215-5p, hsa-miR-29a-3p, hsa-let-7b-5p, hsa-miR-19b-3p, hsa-miR-374a-5p and hsa-miR-148a-3p. The expression levels of miRNAs can be analyzed by the arithmetic device using logistic regression, and the analyzed values can be used to determine that the prognosis of cancer radiotherapy is poor or good.Type: GrantFiled: August 30, 2017Date of Patent: August 11, 2020Assignees: NATIONAL CENTRAL UNIVERSITYInventors: Nian-Han Ma, Tao-Sheng Chung, An-Lun Li, Yao-Ning Chan, Chien-Lung Chen
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Patent number: 10461223Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle ?1, a second curve having a second angle ?2 and a third curve having a third angle ?3, wherein ?3>?2>?1 .Type: GrantFiled: September 12, 2018Date of Patent: October 29, 2019Assignee: Epistar CorporationInventors: Yung-Fu Chang, Hsin-Chan Chung, Hung-Ta Cheng, Wen-Luh Liao, Shih-Chang Lee, Chih-Chiang Lu, Yi-Ming Chen, Yao-Ning Chan, Chun-Fu Tsai
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Publication number: 20190081213Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode.Type: ApplicationFiled: September 12, 2018Publication date: March 14, 2019Inventors: Yung-Fu CHANG, Hsin-Chan CHUNG, Hung-Ta CHENG, Wen-Luh LIAO, Shih-Chang LEE, Chih-Chiang LU, Yi-Ming CHEN, Yao-Ning CHAN, Chun-Fu TSAI
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Patent number: 10084115Abstract: The present disclosure provides an optoelectronic device comprising a semiconductor stack comprising a first side having a first length; a first contact layer on the semiconductor stack; and a second contact layer on the semiconductor stack opposite to the first contact layer, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; and wherein the second contact layer comprises multiple contact regions separated from each other and arranged in a two-dimensional array, wherein a first distance between the two adjacent contact regions is between 0.8% and 8% of the first length.Type: GrantFiled: March 23, 2017Date of Patent: September 25, 2018Assignee: EPISTAR CORPORATIONInventors: Chun-Yu Lin, Yi-Ming Chen, Shih-Chang Lee, Yao-Ning Chan, Tzu-Chieh Hsu
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Patent number: 10038128Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.Type: GrantFiled: September 12, 2017Date of Patent: July 31, 2018Assignee: EPISTAR CORPORATIONInventors: Chien-Fu Huang, Yao-Ning Chan, Tzu Chieh Hsu, Yi-ming Chen, Hsin-Chih Chiu, Chih-Chiang Lu, Chia-liang Hsu, Chun-Hsien Chang
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Publication number: 20180057891Abstract: The present invention provides an analyzer for predicting a prognosis of cancer radiotherapy, including a detection device and an arithmetic device. In a specimen, expression levels of a plurality of microRNAs (miRNAs) can be detected by the detection device. The miRNAs includes hsa-miR-130a-3p, hsa-miR-215-5p, hsa-miR-29a-3p, hsa-let-7b-5p, hsa-miR-19b-3p, hsa-miR-374a-5p and hsa-miR-148a-3p. The expression levels of miRNAs can be analyzed by the arithmetic device using logistic regression, and the analyzed values can be used to determine that the prognosis of cancer radiotherapy is poor or good.Type: ApplicationFiled: August 30, 2017Publication date: March 1, 2018Inventors: Nian-Han MA, Tao-Sheng CHUNG, An-Lun LI, Yao-Ning CHAN, Chien-Lung CHEN
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Publication number: 20180006206Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.Type: ApplicationFiled: September 12, 2017Publication date: January 4, 2018Inventors: Chien-Fu HUANG, Yao-Ning CHAN, Tzu Chieh HSU, Yi-ming CHEN, Hsin-Chih CHIU, Chih-Chiang LU, Chia-liang HSU, Chun-Hsien CHANG
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Patent number: 9793458Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 ?m; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.Type: GrantFiled: February 21, 2017Date of Patent: October 17, 2017Assignee: EPISTAR CORPORATIONInventors: Chien-Fu Huang, Yao-Ning Chan, Tzu Chieh Hsu, Yi Ming Chen, Hsin-Chih Chiu, Chih-Chiang Lu, Chia-Liang Hsu, Chun-Hsien Chang
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Publication number: 20170194532Abstract: The present disclosure provides an optoelectronic device comprising a semiconductor stack comprising a first side having a first length; a first contact layer on the semiconductor stack; and a second contact layer on the semiconductor stack opposite to the first contact layer, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; and wherein the second contact layer comprises multiple contact regions separated from each other and arranged in a two-dimensional array, wherein a first distance between the two adjacent contact regions is between 0.8% and 8% of the first length.Type: ApplicationFiled: March 23, 2017Publication date: July 6, 2017Inventors: Chun-Yu LIN, Yi-Ming Chen, Shih-Chang LEE, Yao-Ning Chan, Tzu-Chieh Hsu
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Publication number: 20170170375Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 ?m; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.Type: ApplicationFiled: February 21, 2017Publication date: June 15, 2017Inventors: Chien-Fu HUANG, Yao-Ning CHAN, Tzu Chieh HSU, Yi Ming CHEN, Hsin-Chih CHIU, Chih-Chiang LU, Chia-Liang HSU, Chun-Hsien CHANG
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Patent number: 9640728Abstract: An optoelectronic device is provided. The optoelectronic device comprises: an optoelectronic system for emitting light; multiple contact regions on the optoelectronic system and separated from one another; and multiple fingers on the optoelectronic system and opposite to the multiple contact regions; wherein a first contact region in the multiple contact regions is between two adjacent fingers, and a first distance between the first contact region and one of the adjacent fingers is between 5% and 50% of a second distance between the two adjacent fingers.Type: GrantFiled: June 8, 2016Date of Patent: May 2, 2017Assignee: EPISTAR CORPORATIONInventors: Chun-Yu Lin, Yi-Ming Chen, Shih-Chang Lee, Yao-Ning Chan, Tzu-Chieh Hsu
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Patent number: 9614127Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 ?m; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.Type: GrantFiled: July 5, 2013Date of Patent: April 4, 2017Assignee: EPISTAR CORPORATIONInventors: Chien-Fu Huang, Yao-Ning Chan, Tzu Chieh Hsu, Yi Ming Chen, Hsin-Chih Chiu, Chih-Chiang Lu, Chia-Liang Hsu, Chun-Hsien Chang
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Patent number: D818974Type: GrantFiled: July 12, 2016Date of Patent: May 29, 2018Assignee: EPISTAR CORPORATIONInventors: Hui-Fang Kao, Tzu-Chieh Hsu, Yao-Ning Chan, Yi-Ming Chen
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Patent number: D894850Type: GrantFiled: December 12, 2018Date of Patent: September 1, 2020Assignee: EPISTAR CORPORATIONInventors: Chun-Fu Tsai, Yao-Ning Chan, Yi-Tang Lai, Yi-Ming Chen, Shih-Chang Lee
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Patent number: D928104Type: GrantFiled: February 7, 2019Date of Patent: August 17, 2021Assignee: EPISTAR CORPORATIONInventors: Hui-Fang Kao, Yao-Ning Chan, Hao-Chun Liang, Shih-Chang Lee
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Patent number: D944218Type: GrantFiled: July 7, 2021Date of Patent: February 22, 2022Assignee: EPISTAR CORPORATIONInventors: Hui-Fang Kao, Yao-Ning Chan, Hao-Chun Liang, Shih-Chang Lee
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Patent number: D972769Type: GrantFiled: March 31, 2021Date of Patent: December 13, 2022Assignee: EPISTAR CORPORATIONInventors: Hui-Fang Kao, Yao-Ning Chan, Yi-Tang Lai, Yun-Chung Chou, Shih-Chang Lee, Chen Ou
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Patent number: D1008198Type: GrantFiled: January 7, 2022Date of Patent: December 19, 2023Assignee: EPISTAR CORPORATIONInventors: Yao-Ning Chan, Tzu-Yun Feng, Yun-Ya Chang