Abstract: A polypropylene fabric structure, a manufacturing method thereof, and a protective clothing including the polypropylene fabric structure are provided. The polypropylene fabric structure includes a polypropylene spunbond nonwoven fabric and a polypropylene meltblown nonwoven fabric. The polypropylene meltblown nonwoven fabric is directly bonded to the polypropylene spunbond nonwoven fabric. The polypropylene meltblown nonwoven fabric is made of a material including polypropylene having a melt flow index between 1700 g/10 min and 2000 g/10 min and a melting point between 155° C. and 165° C.

Abstract: Provided are a wireless power apparatus, a charging dock and an electronic equipment. In the wireless power apparatus, a housing is provided with a mounting cavity; a first battery is disposed within the mounting cavity; multiple first magnetic pieces are disposed in the housing and are configured for adsorbing multiple first adsorption pieces of an equipment body, respectively; a first charging assembly is configured to charge the first battery, a wireless power supply assembly is disposed within the mounting cavity, is electrically connected to the first battery, and is capable of transmitting power of the first battery to the equipment body.

Abstract: The embodiments of the disclosure provide a method for evaluating a health condition indicator of a subject, a host, and a computer readable storage medium. The method includes: obtaining a reference heart rate of the subject and determining a heart rate indicator of the subject according to the reference heart rate; determining a fitness indicator of the subject based on physiological information of the subject; determining an age indicator of the subject based on an age of the subject; and determining the health condition indicator of the subject at least based on the heart rate indicator, the fitness indicator, and the age indicator.

Abstract: A novel structured for a diode-like PID protection (DLPP) device structure and process are described. An N-well, three associate N+ regions and a P+ region are formed on a P substrate. The DLPP is structured as a butting diode with a polysilicon gate above the butting region. The gate is connected to a metal antenna element and to the zener like trigger element of the device. The N-well functions as a resistor and capacitor buffer between the poly gate and antenna and the substrate. The antenna picks up a portion of the plasma charge to provide a gate voltage. There is an inversion layer or accumulation layer for positive or negative plasma charge formed under the poly gate. The junction of the effective zener diode is found in the interface between the N-type inversion layer and P+, or N+ and P-type accumulation layer. Changing the shape and the size of the antenna changes the gate voltage, and subsequently the trigger voltage of the DLPP.