Patents by Inventor Yao-Ru Chang
Yao-Ru Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230129560Abstract: A semiconductor device is provided, which includes an epitaxial structure, an electrode pad, and a contact region. The epitaxial structure includes a geometric center, a first surface and a second surface opposite to the first surface. The electrode pad is on the first surface. The contact region is on the second surface and includes a first group and a second group. The first group includes a plurality of first contact portions separated from each other and is arranged in a first ring shape. The second group includes a plurality of second contact portions separated from each other and is arranged in a second ring shape. A second distance between each of the plurality of second contact portions and the geometric center is greater than a first distance between each of the plurality of first contact portions and the geometric center.Type: ApplicationFiled: October 20, 2022Publication date: April 27, 2023Inventors: Yao-Ru CHANG, Yi HSIAO, Sheng-Feng KUO, Wei-Chu LIAO, Shih-Chang LEE
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Publication number: 20220102582Abstract: A semiconductor structure includes a carrier, a bonding structure, a semiconductor stack, a supporting element and a bridge layer. The bonding structure is on the carrier and has an upper surface. The semiconductor stack is on the bonding structure. The supporting element is on the bonding structure and has a side wall. The bridge layer has a first portion directly connected to the supporting element, a second portion connected to the first portion and a third portion connected to the second portion. The second portion and the third portion of the bridge layer are suspended above the upper surface of the bonding structure. The first portion of the bridge layer directly contacts the side wall of the supporting element.Type: ApplicationFiled: December 14, 2021Publication date: March 31, 2022Inventors: Yung-Fu CHANG, Fan-Lei WU, Shih-Chang LEE, Wen-Luh LIAO, Hung-Ta CHENG, Chih-Chaing YANG, Yao-Ru CHANG, Yi HSIAO, Hsiang CHANG
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Patent number: 11227978Abstract: A semiconductor device and a package structure are provided. The semiconductor device includes a substrate, a light-emitting structure, a first semiconductor layer, a second semiconductor layer and a first electrode. The light-emitting structure is on the substrate. The first semiconductor layer is on the light-emitting structure. The second semiconductor layer is between the first semiconductor layer and the light-emitting structure. The first electrode is on the second semiconductor layer. At least a portion of the first electrode is separated from the first semiconductor layer.Type: GrantFiled: November 11, 2019Date of Patent: January 18, 2022Assignee: Epistar CorporationInventors: Wen-Luh Liao, Cheng-Long Yeh, Ko-Yin Lai, Yao-Ru Chang, Yung-Fu Chang, Yi Hsiao, Shih-Chang Lee
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Patent number: 11227975Abstract: A semiconductor structure includes a carrier having a surface, a supporting element, a semiconductor stack and a bridge layer. The supporting element is on the surface. The semiconductor stack is on the surface and has a side surface. The bridge layer includes a first portion connecting to the supporting element, a second portion, and a third portion connecting to the semiconductor stack. The second portion is extended from the third portion toward the first portion and is protruded from the side surface.Type: GrantFiled: August 23, 2019Date of Patent: January 18, 2022Assignee: Epistar CorporationInventors: Yung-Fu Chang, Fan-Lei Wu, Shih-Chang Lee, Wen-Luh Liao, Hung-Ta Cheng, Chih-Chaing Yang, Yao-Ru Chang, Yi Hsiao, Hsiang Chang
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Patent number: 11121285Abstract: A semiconductor device includes a conductive layer, a semiconductor stack, a first contact structure, an intermediate structure, a second contact structure, a first electrode and a second electrode. The semiconductor stack is disposed on the conductive layer. The first contact structure is disposed on the semiconductor stack. The intermediate structure encloses the first contact structure. The second contact structure is between the conductive layer and the semiconductor stack. The first electrode is on the conductive layer and separated from the semiconductor stack. The second electrode is on the intermediate structure.Type: GrantFiled: November 11, 2019Date of Patent: September 14, 2021Assignee: Epistar CorporationInventors: Yung-Fu Chang, Hui-Fang Kao, Yi-Tang Lai, Shih-Chang Lee, Wen-Luh Liao, Mei Chun Liu, Yao-Ru Chang, Yi Hisao
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Publication number: 20200365769Abstract: A semiconductor device is provided, which includes a base, a semiconductor structure and a conductive reflective structure. The base has a first surface and a second surface opposite to the first surface. The semiconductor structure is located on the first surface. The conductive reflective structure is located on the second surface and includes a metal oxide structure and a metal structure. The metal oxide structure is located between the metal structure and the base. The metal oxide structure physically contacts the second surface.Type: ApplicationFiled: May 15, 2020Publication date: November 19, 2020Inventors: Yao-Ru CHANG, Wen-Luh LIAO, Yung-Fu CHANG, Hsiang CHANG, Meng-Yang CHEN, Yun-Hsin PANG, Yi HSIAO
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Patent number: 10741721Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.Type: GrantFiled: April 3, 2019Date of Patent: August 11, 2020Assignee: EPISTAR CorporationInventors: Cheng-Feng Yu, Ching-Yuan Tsai, Yao-Ru Chang, Hsin-Chan Chung, Shih-Chang Lee, Wen-Luh Liao, Cheng-Hsing Chiang, Kuo-Feng Huang, Hsu-Hsuan Teng, Hung-Ta Cheng, Yung-Fu Chang
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Patent number: 10700240Abstract: The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.Type: GrantFiled: December 2, 2019Date of Patent: June 30, 2020Assignee: EPISTAR CORPORATIONInventors: Yao-Ru Chang, Wen-Luh Liao, Chun-Yu Lin, Hsin-Chan Chung, Hung-Ta Cheng
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Publication number: 20200152831Abstract: A semiconductor device includes a conductive layer, a semiconductor stack, a first contact structure, an intermediate structure, a second contact structure, a first electrode and a second electrode. The semiconductor stack is disposed on the conductive layer. The first contact structure is disposed on the semiconductor stack. The intermediate structure encloses the first contact structure. The second contact structure is between the conductive layer and the semiconductor stack. The first electrode is on the conductive layer and separated from the semiconductor stack. The second electrode is on the intermediate structure.Type: ApplicationFiled: November 11, 2019Publication date: May 14, 2020Inventors: Yung-Fu CHANG, Hui-Fang KAO, Yi-Tang LAI, Shih-Chang LEE, Wen-Luh LIAO, Mei Chun LIU, Yao-Ru CHANG, Yi HISAO
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Publication number: 20200152836Abstract: A semiconductor device and a package structure are provided. The semiconductor device includes a substrate, a light-emitting structure, a first semiconductor layer, a second semiconductor layer and a first electrode. The light-emitting structure is on the substrate. The first semiconductor layer is on the light-emitting structure. The second semiconductor layer is between the first semiconductor layer and the light-emitting structure. The first electrode is on the second semiconductor layer. At least a portion of the first electrode is separated from the first semiconductor layer.Type: ApplicationFiled: November 11, 2019Publication date: May 14, 2020Inventors: Wen-Luh LIAO, Cheng-Long YEH, Ko-Yin LAI, Yao-Ru CHANG, Yung-Fu CHANG, Yi HSIAO, Shih-Chang LEE
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Publication number: 20200105975Abstract: The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.Type: ApplicationFiled: December 2, 2019Publication date: April 2, 2020Inventors: Yao-Ru CHANG, Wen-Luh LIAO, Chun-Yu LIN, Hsin-Chan CHUNG, Hung-Ta CHENG
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Publication number: 20200075807Abstract: A semiconductor structure includes a carrier having a surface, a supporting element, a semiconductor stack and a bridge layer. The supporting element is on the surface. The semiconductor stack is on the surface and has a side surface. The bridge layer includes a first portion connecting to the supporting element, a second portion, and a third portion connecting to the semiconductor stack. The second portion is extended from the third portion toward the first portion and is protruded from the side surface.Type: ApplicationFiled: August 23, 2019Publication date: March 5, 2020Inventors: Yung-Fu CHANG, Fan-Lei WU, Shih-Chang LEE, Wen-Luh LIAO, Hung-Ta CHENG, Chih-Chaing YANG, Yao-Ru CHANG, Yi HSIAO, Hsiang CHANG
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Patent number: 10529896Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.Type: GrantFiled: September 19, 2018Date of Patent: January 7, 2020Assignee: EPISTAR CORPORATIONInventors: Yao-Ru Chang, Wen-Luh Liao, Chun-Yu Lin, Hsin-Chan Chung, Hung-Ta Cheng
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Publication number: 20190229233Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.Type: ApplicationFiled: April 3, 2019Publication date: July 25, 2019Inventors: Cheng-Feng YU, Ching-Yuan TSAI, Yao-Ru CHANG, Hsin-Chan CHUNG, Shih-Chang LEE, Wen-Luh LIAO, Cheng-Hsing CHIANG, Kuo-Feng HUANG, Hsu-Hsuan TENG, Hung-Ta CHENG, Yung-Fu CHANG
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Patent number: 10312407Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.Type: GrantFiled: July 20, 2018Date of Patent: June 4, 2019Assignee: EPISTAR CORPORATIONInventors: Cheng-Feng Yu, Ching-Yuan Tsai, Yao-Ru Chang, Hsin-Chan Chung, Shih-Chang Lee, Wen-Luh Liao, Cheng-Hsing Chiang, Kuo-Feng Huang, Hsu-Hsuan Teng, Hung-Ta Cheng, Yung-Fu Chang
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Publication number: 20190019920Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.Type: ApplicationFiled: September 19, 2018Publication date: January 17, 2019Inventors: Yao-Ru CHANG, Wen-Luh LIAO, Chun-Yu LIN, Hsin-Chan CHUNG, Hung-Ta CHENG
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Publication number: 20180351036Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.Type: ApplicationFiled: July 20, 2018Publication date: December 6, 2018Inventors: Cheng-Feng YU, Ching-Yuan TSAI, Yao-Ru CHANG, Hsin-Chan CHUNG, Shih-Chang LEE, Wen-Luh LIAO, Cheng-Hsing CHIANG, Kuo-Feng HUANG, Hsu-Hsuan TENG, Hung-Ta CHENG, Yung-Fu CHANG
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Patent number: 10109771Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.Type: GrantFiled: July 18, 2017Date of Patent: October 23, 2018Assignee: EPISTAR CORPORATIONInventors: Yao-Ru Chang, Wen-Luh Liao, Chun-Yu Lin, Hsin-Chan Chung, Hung-Ta Cheng
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Patent number: 10032954Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.Type: GrantFiled: May 10, 2017Date of Patent: July 24, 2018Assignee: EPISTAR CORPORATIONInventors: Cheng-Feng Yu, Ching-Yuan Tsai, Yao-Ru Chang, Hsin-Chan Chung, Shih-Chang Lee, Wen-Luh Liao, Cheng-Hsing Chiang, Kuo-Feng Huang, Hsu-Hsuan Teng, Hung-Ta Cheng, Yung-Fu Chang
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Publication number: 20170331001Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.Type: ApplicationFiled: May 10, 2017Publication date: November 16, 2017Inventors: Cheng-Feng YU, Ching-Yuan TSAI, Yao-Ru CHANG, Hsin-Chan CHUNG, Shih-Chang LEE, Wen-Luh LIAO, Cheng-Hsing CHIANG, Kuo-Feng HUANG, Hsu-Hsuan TENG, Hung-Ta CHENG, Yung-Fu CHANG