Abstract: The present disclosure relates to a method and device for decreasing generation of surface oxide of aluminum nitride. In a physical vapor deposition process, the aluminum nitride is deposited on a substrate in a deposition chamber to form an aluminum nitride coated substrate. A cooling chamber and a cooling load lock module respectively perform a first stage cooling and a second stage cooling on the aluminum nitride coated substrate in vacuum environments, so as to prevent the aluminum nitride coated substrate with the high temperature from being exposed in an atmosphere environment to generate the surface oxide. The method and device for decreasing the generation of the surface oxide of the aluminum nitride can further eliminate crystal defects caused by that gallium nitride is deposited on the surface oxide of the aluminum nitride in the next process.

Abstract: A wafer fixing mechanism as disclosed includes a fixing ring, a plurality of fixing members and a plurality of elastic units, wherein each fixing member is respectively connected to the fixing ring through a connecting shaft. The fixing ring includes a containing area for containing a wafer, and the wafer in the containing area is fixed by the fixing members. The two ends of the elastic unit are respectively connected to the fixing ring and the fixing member. When the wafer pushes the fixing members, the fixing members will swing relative to the fixing ring to prevent the fixing members from damaging the wafer. In addition, when the fixing member swings relative to the fixing ring, the elastic unit is deformed, so that the restoring force of the elastic unit is applied to the wafer via the fixing member, thereby fixing the wafer on a support pedestal.

Abstract: The present disclosure is a thin-film deposition equipment including a chamber, a stage, at least one baffle and at least one shielding component. The stage is for carrying a substrate, the baffle prevents the substrate on the stage from backside coating. The shielding component is positioned higher the baffle for shielding the baffle, to receive target atoms which is yet deposited on the substrate for the baffle. Such that to avoid the target atoms deposited on the baffle forming a thin film, and to further prevent a problem of the thin film from being heated then flowing from the baffle to a contact area between the baffle and the substrate.

Abstract: The present disclosure provides an equipment for thin-film deposition or pre-cleaning which includes a chamber, a support pedestal, a fixing ring and a plurality of fixing members, wherein the support pedestal, the fixing ring and the fixing members are positioned within the chamber. The support pedestal has a supporting surface that supports a wafer, the fixing ring is connected to the support pedestal and surrounds the support pedestal and the wafer. When the fixing ring is disposed on the support pedestal, the fixing members contact the wafer, to fix the wafer on the support pedestal. The supporting surface of the support pedestal is at a height level same as or lower than the upper surface of the fixing ring is, to prevent the fixing ring from blocking an edge area of the wafer, to facilitate forming an evenly-distributed and steady plasma.

Abstract: The present disclosure relates to a method and device for decreasing generation of surface oxide of aluminum nitride. In a physical vapor deposition process, the aluminum nitride is deposited on a substrate in a deposition chamber to form an aluminum nitride coated substrate. A cooling chamber and a cooling load lock module respectively perform a first stage cooling and a second stage cooling on the aluminum nitride coated substrate in vacuum environments, so as to prevent the aluminum nitride coated substrate with the high temperature from being exposed in an atmosphere environment to generate the surface oxide. The method and device for decreasing the generation of the surface oxide of the aluminum nitride can further eliminate crystal defects caused by that gallium nitride is deposited on the surface oxide of the aluminum nitride in the next process.

Abstract: A masking structure for a wafer supporting plate comprises a cavity; a carrying tray having a plurality of recesses in a top surface thereof for receiving a plurality of wafers; the carrying tray can be transferred into and out of the cavity by using a robot; a supporting plate installed within the cavity and below the carrying tray; the supporting plate could move upwards, and downwards; a mask installed within the cavity and above the carrying tray; the mask formed with a plurality of through holes which are positioned and shaped to be corresponding to those of the wafers on the carrying tray; therefore, when the supporting plate lifts the carrying tray to be near the mask, the wafers are exposed out of the through holes.

Abstract: A plasma etching reaction chamber includes a casing having a receiving chamber; a base liftably installed below the receiving chamber; a first electrode and a second electrode; and a radio frequency electrode rod. The second electrode has a plurality of water channels and a bottom of the second electrode is installed with two cooling water tubes which are communicated with the plurality of water channels; upper sides of the two cooling water tubes are hidden within the driving rod and lower sides thereof extend downwards to be out of the casing so that external cooling water can flow into the cooling water tubes and then to the water channels to achieve the object of cooling.