Patents by Inventor Yao-Wu Feng

Yao-Wu Feng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrostatic discharge protection device and method
    Patent number: 8551835
    Abstract: Embodiments of the invention relate to an electrostatic discharge (ESD) device and method for forming an ESD device. An embodiment is an ESD protection device comprising a p well disposed in a substrate, an n well disposed in the substrate, a high voltage n well (HVNW) disposed between the p well and the n well in the substrate, a source n+ region disposed in the p well, and a plurality of drain n+ regions disposed in the n well.
    Type: Grant
    Filed: February 18, 2013
    Date of Patent: October 8, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Song Sheu, Jian-Hsing Lee, Yao-Wu Feng
  • Electrostatic discharge protection device comprising a plurality of highly doped areas within a well
    Patent number: 8378422
    Abstract: Embodiments of the invention relate to an electrostatic discharge (ESD) device and method for forming an ESD device. An embodiment is an ESD protection device comprising a p well disposed in a substrate, an n well disposed in the substrate, a high voltage n well (HVNW) disposed between the p well and the n well in the substrate, a source n+ region disposed in the p well, and a plurality of drain n+ regions disposed in the n well.
    Type: Grant
    Filed: October 30, 2009
    Date of Patent: February 19, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Song Sheu, Jian-Hsing Lee, Yao-Wu Feng
  • Electrostatic Discharge Protection Device and Method
    Publication number: 20100200922
    Abstract: Embodiments of the invention relate to an electrostatic discharge (ESD) device and method for forming an ESD device. An embodiment is an ESD protection device comprising a p well disposed in a substrate, an n well disposed in the substrate, a high voltage n well (HVNW) disposed between the p well and the n well in the substrate, a source n+ region disposed in the p well, and a plurality of drain n+ regions disposed in the n well.
    Type: Application
    Filed: October 30, 2009
    Publication date: August 12, 2010
    Inventors: Ming-Song Sheu, Jian-Hsing Lee, Yao-Wu Feng