Patents by Inventor Yao Yi Liu

Yao Yi Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080246513
    Abstract: The present invention relates to a gate driving circuit, comprising a driver control circuit, a voltage following bias circuit, a pull up circuit and a MOS transistor. The driver control circuit receives an active signal and generates a pull up signal or a pull down signal. In case of the pull up signal, the MOS transistor is turned to the OFF state by the pull up circuit, and there is no current for the output load device. In case of the pull down signal, the MOS transistor is turned to the ON state by the voltage following bias circuit. The driving voltage for the gate of the MOS transistor has a constant voltage drop according to the external supply voltage. Therefore, the gate driving circuit of the present invention provides a constant current for the output load device.
    Type: Application
    Filed: April 4, 2007
    Publication date: October 9, 2008
    Inventors: Yao Yi Liu, Yen-An Chang
  • Patent number: 7432747
    Abstract: The present invention relates to a gate driving circuit, comprising a driver control circuit, a voltage following bias circuit, a pull up circuit and a MOS transistor. The driver control circuit receives an active signal and generates a pull up signal or a pull down signal. In case of the pull up signal, the MOS transistor is turned to the OFF state by the pull up circuit, and there is no current for the output load device. In case of the pull down signal, the MOS transistor is turned to the ON state by the voltage following bias circuit. The driving voltage for the gate of the MOS transistor has a constant voltage drop according to the external supply voltage. Therefore, the gate driving circuit of the present invention provides a constant current for the output load device.
    Type: Grant
    Filed: April 4, 2007
    Date of Patent: October 7, 2008
    Assignee: Etron Technology Inc.
    Inventors: Yao Yi Liu, Yen-An Chang
  • Patent number: 7277315
    Abstract: Methods and circuits to reduce power consumption of DRAM local word-line drivers are disclosed. A first voltage converter provides a voltage VPP1, which is lower than the voltage VPP required to operate a word-line of a DRAM cell array. A voltage detector monitors the voltage level of the local word-line driver. Once the voltage level VPP1 is reached on the local word-linedriver switching means as e.g. tri-state drivers put the final VPP voltage on the word line. This VPP voltage is the output of a second voltage boost converter. Putting the voltage in two stages on the word-line reduces the overall power consumption. The voltage level VPP1 has to be carefully selected to find a compromised solution between current consumption and performance.
    Type: Grant
    Filed: December 14, 2005
    Date of Patent: October 2, 2007
    Assignee: Etron Technology, Inc.
    Inventors: Der-Min Yuan, Jen Shou Hsu, Yao Yi Liu