Abstract: A system for sharing a bus port includes a first bus host, a second bus host, a multiplexer configured to select either the first bus host or the second bus host to connect to a bus port, and a port detector configured to detect whether a peripheral is connected or disconnect to the bus port. The first bus host is configured to: determine, in response detecting a peripheral connected to the bus port, which one of the first bus host or the second bus host the peripheral is dedicated to, and control, in response to the port detector determining that the peripheral is dedicated to the second bus host, the multiplexer to select the second bus host to connect to the bus port.

Abstract: A terahertz modulator based on low-dimension electron plasma wave, a manufacturing method thereof, and a high speed modulation method are provided. The terahertz modulator includes a plasmon and a cavity. The present disclosure discloses the resonance absorption mechanism caused by collective oscillation of electrons (plasma wave, namely, the plasmon). In order to enhance the coupling strength between the terahertz wave and the plasmon, a GaN/AlGaN high electron mobility transistor structure having a grating gate is integrated in a terahertz Fabry-Pérot cavity, and a plasmon polariton is formed arising from strong coupling of the plasmon and a cavity mode.

Abstract: An early warning method and a device for preventing a wheelchair from tipping over are described. The early warning method includes projecting a laser light pattern, scanning the laser light pattern, making a comparison to determine whether the ground is a barrier terrain, and issuing an early warning to the user in situations of risk. The laser light pattern is projected onto the ground and compared with a standard pattern. The early warning is generated and is one selected from a group consisting of a beep, a warning message and a vibration to alert the wheelchair user to the danger of the barrier terrain.

Abstract: A multi-mixer system comprising a plurality of mixers and a filter module is provided. Each of the mixers is selectively enabled to mix an input signal with a corresponding oscillation signal to generate an output signal at an output node; and the filter module provides different frequency responses for the output signals from at least two of the output nodes of the mixers, wherein the at least two of the output nodes of the mixers are connected to different internal nodes of the filter module.

Abstract: The semiconductor device structures and methods for forming the same are provided. The semiconductor device structure includes a metal gate over a substrate. A first spacer is formed over sidewalls of the metal gate and having a first height. A second spacer is formed over the sidewalls of the metal gate and having a second height. The first height is higher than the second height. The first spacer is farther from the sidewalls of the metal gate than the second spacer. In addition, the semiconductor device structure includes a dielectric layer formed over the substrate to surround the first spacer and the metal gate.

Abstract: The present disclosure provides a method for converting a Two-Dimensional image into a Three-Dimensional image, comprising: obtaining high-frequency components and low-frequency component of the current frame, and high-frequency components of the reference frame; establishing triangular geometric models in the three directions of horizontal, vertical and diagonal, respectively; performing a motion search on the high-frequency components of the reference frame in the three directions of horizontal, vertical and diagonal, respectively, so as to obtain motion vectors in the corresponding directions, and calculating depth variations of the corresponding directions according to the motion vectors in the corresponding directions; performing an interpolating operation on the triangular geometric models in the three directions of horizontal, vertical and diagonal, respectively, according to the depth variations in the corresponding directions, so as to obtain high-frequency depth graphs in the corresponding direction

Abstract: A gate drive on array unit, a gate drive on array circuit and a display device are disclosed. The gate drive on array unit including: a control module configured to output a clock signal under control of a gate driving signal of a previous stage of gate drive on array unit or a start input signal; an output module connected to the control module and configured to output a high voltage signal (VGH) as a gate driving signal of the present stage under control of the clock signal outputted from the control module, and output a low voltage signal under the control of the clock signal outputted from the control module; and a reset module connected to the output module, and configured to reset the gate driving signal of the present stage under the control of a gate driving signal of a next stage of gate drive on array unit.

Abstract: A support rack includes a base, and two supporting units. Each of the supporting units includes a support seat. The support seat of each of the supporting units is pivotally connected with the base and extends downward. The support seat of each of the supporting units includes a pivot end pivotally connected with the base, and a mounting portion located opposite to the pivot end. The pivot end of the support seat of each of the supporting units is pivotable relative to the base to adjust the distance between the mounting portions of the supporting units.

Abstract: A shift register unit, a shift register and a display apparatus are provided. The shift register unit includes a voltage-boosting module configured to output a first level signal when receiving a gate driving signal sent from the previous stage of shift register unit; a signal output module configured to output a gate driving signal under the control of a first clock signal based on the first level signal output by the voltage-boosting module; a reset module configured to control the signal output module to reset under the control of a reset signal; and a pull-down module configured to pull down the output level of the signal output module under the control of a second clock signal. It is possible to reduce the power consumption of the integrated circuit and avoid the abnormal waveform issue due to the decay of the reset signal by employing the technical solutions of embodiments of the present disclosure.

Abstract: The semiconductor device structures and methods for forming the same are provided. The semiconductor device structure includes a metal gate over a substrate. A first spacer is formed over sidewalls of the metal gate and having a first height. A second spacer is formed over the sidewalls of the metal gate and having a second height. The first height is higher than the second height. The first spacer is farther from the sidewalls of the metal gate than the second spacer. In addition, the semiconductor device structure includes a dielectric layer formed over the substrate to surround the first spacer and the metal gate.

Abstract: The invention is related to a light control film. The light control film includes a transparent substrate having a light incident surface and a light emitting surface, and a plurality of microcavity structures formed on the light incident surface of the transparent substrate. The microcavity structures are in inverted-pyramid shape and each microcavity structure is formed by at least four faces.

Abstract: A pixel unit, including: a pixel electrode, a gate electrode, a gate electrode line connected with the gate electrode, a source electrode, a data line connected with the source electrode, a second electrode disposed in a same layer as the pixel electrode, a first drain electrode connected with the pixel electrode, and a second drain electrode connected with the second electrode; the first drain electrode and the second drain electrode and the source electrode are provided with a channel therebetween, and the first drain electrode and the second drain electrode do not contact each other; along a direction of the data line, the edge of the second electrode is parallel with the edge of the pixel electrode and the two do not contact. An array substrate, a pixel driving method and a display device are further disclosed for overcoming the phenomenon of light leakage of the edge of the pixel unit caused by reduction of the width of the black matrix.

Abstract: The semiconductor device structures and methods for forming the same are provided. The semiconductor device structure includes a metal gate over a substrate. A first spacer is formed over sidewalls of the metal gate and having a first height. A second spacer is formed over the sidewalls of the metal gate and having a second height. The first height is higher than the second height. The first spacer is farther from the sidewalls of the metal gate than the second spacer. In addition, the semiconductor device structure includes a dielectric layer formed over the substrate to surround the first spacer and the metal gate.

Abstract: A touch screen comprises a first substrate, a second substrate and a third substrate sequentially stacked. A first sensing layer is provided on a first surface of the second substrate opposing to the third substrate, and a second sensing layer is provided on a surface of the third substrate opposing to the second substrate. The second substrate provided with the first sensing layer and the third substrate provided with the second sensing layer constitute a touch unit for sensing a touch signal, and the second substrate and the first substrate constitute a display unit for displaying.

Abstract: A signal modulator includes: a modulating circuit; a first signal trace block arranged to conduct a first in-phase oscillating signal to the modulating circuit, and conduct a first quadrature-phase oscillating signal to the modulating circuit; and a second signal trace block arranged to conduct a second in-phase oscillating signal to the modulating circuit, and conduct a second quadrature-phase oscillating signal to the modulating circuit, and a phase difference of the first in-phase oscillating signal caused by the first signal trace block substantially equals a phase difference of the second quadrature-phase oscillating signal caused by the second signal trace block, a second quadrature-phase oscillating signal to the modulating circuit, and a phase difference of the second in-phase oscillating signal caused by the second signal trace block substantially equals a phase difference of the first quadrature-phase oscillating signal caused by the first signal trace block.

Abstract: Embodiments of the disclosure provide semiconductor device structures and methods of forming the same. The semiconductor device structure includes a metal gate over a substrate. A first spacer is formed over sidewalls of the metal gate and having a first height. A second spacer is formed over the sidewalls of the metal gate and having a second height. The first height is higher than the second height. The first spacer is farther from the sidewalls of the metal gate than the second spacer. In addition, the semiconductor device structure includes a dielectric layer formed over the substrate to surround the first spacer and the metal gate.

Abstract: An operational amplifier based circuit has an operational amplifier, a feedback circuit, and a compensation circuit block. The feedback circuit is coupled between an output port and an input port of the operational amplifier. The compensation circuit block has circuits involved in stability compensation of the operational amplifier, wherein there is no stability compensation circuit driven at the output port of the operational amplifier.

Abstract: An amplifier applicable to an intra-band non-contiguous carrier aggregation (NCCA) band includes a first amplifier circuit and a second amplifier circuit. The NCCA band includes at least a primary component carrier (PCC) channel and a secondary component carrier (SCC) channel not adjacent to each other. The first amplifier circuit receives a first input signal, and generates a first output signal for undergoing down-conversion of one of the PCC channel and the SCC channel. The second amplifier circuit receives at least one second input signal, and generates a second output signal for undergoing down-conversion of another of the PCC channel and the SCC channel. The at least one second input signal received by the second amplifier circuit is provided by the first amplifier circuit according to the first input signal.

Abstract: The present disclosure discloses a driving circuit for electrophoretic display, including a data line driving integrated circuit and a gate line driving integrated circuit, characterized in that the output terminal of each data line in the data line driving integrated circuit is configured with a modulation unit including a thermosensitive element, and the modulation unit adjusts the pulse width of the voltage signal outputted at the output terminal of the data line according to change of temperature to realize temperature compensation for the dielectric characteristic of the electrophoretic film of the electrophoretic display. The present disclosure also discloses an implementation method of the driving circuit and an electrophoretic display device. According to the present disclosure, the workload of the early stage experiment process of the product design can be saved, the production efficiency of the products can be improved, and the storage space of the chip can also be saved.

Abstract: A support rack includes a base, and two supporting units. Each of the supporting units includes a support seat. The support seat of each of the supporting units is pivotally connected with the base and extends downward. The support seat of each of the supporting units includes a pivot end pivotally connected with the base, and a mounting portion located opposite to the pivot end. The pivot end of the support seat of each of the supporting units is pivotable relative to the base to adjust the distance between the mounting portions of the supporting units.