Abstract: A system and method for determining the temperature of substrates in a thermal processing chamber in the presence of either an oxidizing atmosphere or a reducing atmosphere is disclosed. Specifically, temperature determinations made in accordance with the present invention are generally for calibrating other temperature sensing devices that may be used in conjunction with the thermal processing chamber. The method of the present invention is generally directed to heating a substrate containing a reactive coating within a thermal processing chamber in an oxidizing atmosphere or reducing atmosphere. As the wafer is heated, the reactive coating reacts with gases contained within the chamber based upon the temperature to which the substrate is exposed. After heated, the thickness of any coating that is formed on the substrate is then measured for determining the temperature to which the substrate was heated.

Abstract: A process and system for preventing gases from either leaking into or out of a thermal processing chamber that is designed to operate at or near atmospheric pressure is disclosed. For instance, in one embodiment, gases are prevented from leaking into a thermal processing chamber by maintaining the pressure within the chamber at levels that are slightly greater than atmospheric pressure. In an alternative embodiment, in order to prevent gases from leaking out of the chamber, the pressure within the chamber is maintained at levels slightly less than atmospheric pressure. During operation of the thermal processing chamber, a gas is continuously circulated through the chamber. In order to carry out the process of the present invention, a pressure control device can be placed upon the gas outlet for maintaining the pressure within the chamber within a desired range.

Abstract: A method of measuring the surface temperature of an object. The method includes performing ellipsometric measurements on the object in order to determine at least first and second photon energies (E.sub.1, E.sub.2) for an electromagnetic beam at which measurements are respectively substantially independent of temperature and dependent on temperature. The method further includes creating and directing to the object, an electromagnetic incident beam including at least the first and second photon energies (E.sub.1, E.sub.2). The change in polarization at the first photon energy (E.sub.1) is measured and the thickness of the layer of material is determined on the basis of this measurement. The surface temperature of the object can then be determined on the basis of the measured change in polarization at the second photon energy (E.sub.2) of the beam, while taking account of the thickness of the layer of material.