Abstract: A device and a method for growing a silicon carbide single crystal based on a PVT method are provided. The device comprises a growth chamber, a crucible, one or more lifting rods, and a stock bin for holding raw materials. The crucible, the lifting rods and the stock bin are located within the growth chamber, and the stock bin is located within the crucible. The stock bin comprises independent storage compartments, and each of the lifting rods extends from a bottom of the crucible, passes through a bottom of one of the storage compartments, and extends to a top of the storage compartment. The lifting rod moves upward and downward to seal the storage compartment, or creating a channel for gas-phase raw materials transmission at the top of the storage compartment. This device increases the utilization rate of raw materials and improves the quality of crystal growth.

Abstract: A device and a method for growing a silicon carbide single crystal based on a PVT method are provided. The device comprises a growth chamber, a crucible, one or more lifting rods, and a stock bin for holding raw materials. The crucible, the lifting rods and the stock bin are located within the growth chamber, and the stock bin is located within the crucible. The stock bin comprises independent storage compartments, and each of the lifting rods extends from a bottom of the crucible, passes through a bottom of one of the storage compartments, and extends to a top of the storage compartment. The lifting rod moves upward and downward to seal the storage compartment, or creating a channel for gas-phase raw materials transmission at the top of the storage compartment. This device increases the utilization rate of raw materials and improves the quality of crystal growth.

Abstract: The disclosure provides a growth method and a growth device for silicon carbide crystal. The method at least includes steps of heating a silicon carbide and monitoring a temperature thereof, monitoring a silicon content in the silicon carbide that is evaporated when the silicon carbide is heated to reach a preset temperature, starting to reduce a pressure for nucleation when the silicon content reaches a first preset content value, detecting a radiation of a specific wavelength generated by crystallization at a growth interface when the silicon carbide grows and recording the radiation as a first characteristic radiation, and adjusting the first characteristic radiation to be consistent with a characteristic radiation of a required crystal form when the first characteristic radiation is inconsistent with the characteristic radiation of the required crystal form of the silicon carbide. The disclosure can effectively regulate the selection of crystal forms during the crystal growth process.