Patents by Inventor Yaochuan MEI

Yaochuan MEI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10665797
    Abstract: In one aspect, field effect transistors are described herein employing channels formed of hybrid halide perovskite materials. For example, a field effect transistor comprises a source terminal, a drain terminal and a gate terminal wherein a dielectric layer is positioned between the gate terminal and the source and drain terminals. A channel layer is in electrical communication with the source terminal and the drain terminal, the channel layer comprising an organic-inorganic perovskite in contact with a polymeric surface of the dielectric layer.
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: May 26, 2020
    Assignees: WAKE FOREST UNIVERSITY, UNIVERSITY OF UTAH RESEARCH FOUNDATION
    Inventors: Yaochuan Mei, Oana Diana Jurchescu, Zeev Valentine Vardeny, Chuang Zhang
  • Publication number: 20180351121
    Abstract: In one aspect, field effect transistors are described herein employing channels formed of hybrid halide perovskite materials. For example, a field effect transistor comprises a source terminal, a drain terminal and a gate terminal wherein a dielectric layer is positioned between the gate terminal and the source and drain terminals. A channel layer is in electrical communication with the source terminal and the drain terminal, the channel layer comprising an organic-inorganic perovskite in contact with a polymeric surface of the dielectric layer.
    Type: Application
    Filed: November 9, 2016
    Publication date: December 6, 2018
    Applicants: WAKE FOREST UNIVERSITY, University of Utah Research Foundation
    Inventors: Yaochuan MEI, Oana Diana JURCHESCU, Zeev Valentine VARDENY, Chuang Zhang