Abstract: A semiconductor structure includes an array of active patterns, a peripheral pattern around the array of active patterns, and at least a branch pattern connected to an inner edge of the peripheral pattern. The active patterns respectively extend along a first direction and are arranged end-to-end along the first direction and side-by-side along a second direction that is different form the first direction. The branch pattern extends along the first direction. An end portion of the branch pattern and an end portion of one of the active patterns that is immediately side-by-side next to the branch pattern are flush along the second direction.

Abstract: A DRAM includes a substrate, a plurality of first active regions disposed on the substrate and arranged end-to-end along the first direction, and a plurality of second active regions disposed between the first active regions and arranged end-to-end along the first direction. The second active regions respectively have a first sidewall adjacent to a first trench between the second active region and one of the first active regions and a second sidewall adjacent to a second trench between the ends of the first active regions, wherein the second sidewall is taper than the first sidewall in a cross-sectional view.

Abstract: Provided is a shallow trench isolating structure and a semiconductor device. The trench isolating structure is formed in a substrate and includes a first and a second part. The first part has a first side wall extending from a surface of the substrate to a location, the first side wall has a first slope, and a surface of it has a first roughness. The second part has a second side wall extending from the first side wall to a location, the second side wall has a second slope, and a surface of it has a second roughness, the second slope is greater than the first slope, and the second roughness is greater than the first roughness. The disclosure solves the problem that it is difficult to fill the shallow trench isolating structure, and an undersized available space of the surface of the substrate may not be caused.

Abstract: Provided is a shallow trench isolating structure and a semiconductor device. The trench isolating structure is formed in a substrate and includes a first and a second part. The first part has a first side wall extending from a surface of the substrate to a location, the first side wall has a first slope, and a surface of it has a first roughness. The second part has a second side wall extending from the first side wall to a location, the second side wall has a second slope, and a surface of it has a second roughness, the second slope is greater than the first slope, and the second roughness is greater than the first roughness. The disclosure solves the problem that it is difficult to fill the shallow trench isolating structure, and an undersized available space of the surface of the substrate may not be caused.