Abstract: A method and system for in operando, in situ, and real-time monitoring the state of an electrochemical device, e.g. battery, is provided, which is by means of an optical fiber probe inside the electrochemical device. The method includes: shedding an input light into the optical fiber probe and detecting an output light transmitted therefrom; and determining state of health of the electrochemical device based on the output light. The determination step can be based on a change of the refractive index or of the cladding mode or the surface plasmon resonance, all derived from the output light, in the instant state compared to a prior state. The method can simultaneously detect other parameters including state of charge, temperature, pressure, strain, displacement, vibration, or gas release inside the electrochemical device. With a core mode for correction, the determination of these parameters can also realize a high accuracy.

Abstract: An electrode material, its manufacturing method, and its use as a cathode material in batteries are provided. The electrode material comprises a plurality of nanoparticles, each having a diameter of approximately 100-400 nm and comprising a core and a shell encapsulating the core. The shell comprises carbon and nitrogen, respectively having a mass fraction of approximately 70-90% and approximately 5-20% relative to a total mass of the shell. The core comprises sulfur, having a mass fraction of approximately 40-97% relative to a total mass of the core. The core has a mass fraction of approximately 50-90% relative to a total mass of each nanoparticle. The electrode material can be used in a cathode of a Li—S battery, which has a good energy storage capacity, a high electrochemical stability, and a low capacity decay.

Abstract: A thin film solar cell is disclosed comprising the following layers deposited on a substrate: a microcrystalline p- or n-layer, an intermediate microcrystalline silicon i-layer applied by a hot-wire chemical-vapor deposition (HWCVD) method on the microcrystalline p- or n-layer a), an additional i-layer of microcrystalline silicon, which is formed by depositing on the intermediate microcrystalline silicon i-layer, by a plasma enhanced chemical vapor deposition (PECVD), a sputtering process, or a photo-CVD method whereby layers b) and c) together form an i-layer, and if a p-layer is present as the layer of step a), an n-layer, and if an n-layer is present as the layer of step a), a p-layer that is either microcrystalline or amorphous.

Abstract: A thin film solar cell is disclosed comprising the following layers deposited on a substrate: a microcrystalline p- or n-layer, an intermediate microcrystalline silicon i-layer applied by a hot-wire chemical-vapor deposition (HWCVD) method on the microcrystalline p- or n-layer a), an additional i-layer of microcrystalline silicon, which is formed by depositing on the intermediate microcrystalline silicon i-layer, by a plasma enhanced chemical vapor deposition (PECVD), a sputtering process, or a photo-CVD method whereby layers b) and c) together form an i-layer, and if a p-layer is present as the layer of step a), an p-layer, and if an n-layer is present as the layer of step a), a p-layer that is either microcrystalline or amorphous.

Abstract: The invention relates to a method for production of a thin-layer solar cell with microcrystalline silicon and a layer sequence. According to the invention, a microcrystalline silicon layer is applied to the lower p- or n-layer in pin or nip thin-layer solar cells, by means of a HWCVD method before the application of the microcrystalline i-layer. The efficiency of the solar cell is hence increased by up to 0.8% absolute.

Abstract: The invention relates to a method for production of a thin-layer solar cell with microcrystalline silicon and a layer sequence. According to the invention, a microcrystalline silicon layer is applied to the lower p- or n-layer in pin or nip thin-layer solar cells, by means of a HWCVD method before the application of the microcrystalline i-layer. The efficiency of the solar cell is hence increased by up to 0.8% absolute.