Abstract: The Coulombic efficiency of metal deposition/stripping can be improved while also preventing dendrite formation and growth by an improved electrolyte composition. The electrolyte composition also reduces the risk of flammability. The electrolyte composition includes a polymer and/or additives to form high quality SEI layers on the anode surface and to prevent further reactions between metal and electrolyte components. The electrolyte composition further includes additives to suppress dendrite growth during charge/discharge processes. The electrolyte composition can also be applied to lithium and other kinds of energy storage devices.

Abstract: The Coulombic efficiency of lithium deposition/stripping can be improved while also substantially preventing lithium dendrite formation and growth using particular electrolyte compositions. Embodiments of the electrolytes include organic solvents and their mixtures to form high-quality SEI layers on the lithium anode surface and to prevent further reactions between lithium and electrolyte components. Embodiments of the disclosed electrolytes further include additives to suppress dendrite growth during charge/discharge processes. The solvent and additive can significantly improve both the Coulombic efficiency and smoothness of lithium deposition. By optimizing the electrolyte formulations, practical rechargeable lithium energy storage devices with significantly improved safety and long-term cycle life are achieved. The electrolyte can also be applied to other kinds of energy storage devices.

Abstract: An improved static alignment and an improved dynamic alignment are combined in a laser beam method and system that provides instantaneous and continuous information feedback to a golfer to allow the real time correction of defects arising from a golfer's stance, head movement, body movement, golf club alignment, and golf club swing.

Abstract: Disclosed are a device and a method for distributing measurement sample and cleaning tubes. The device comprises a diluent container for accommodating a diluent therein; an aspirating tube for sucking a measurement sample; a first syringe for quantifying the measurement sample; a second syringe for quantifying the diluent; a first switching unit for switching between a first passage and a second passage; a bath; a sample buffer tube communicated with the first syringe; a dispensing tube for dispensing the measurement sample or the diluent into the bath; a second switching unit for switching between a third passage and a fourth passage. A reagent buffer tube, a reagent container and a third switching unit may be further provided between the sample buffer tube and the first syringe, or between the second switching unit and the input port of the dispensing tube.

Abstract: The present invention discloses a liquid volumetric device comprising a metering tube, a start sensor, an end sensor, a bath for storage of a sample to be metered, a vacuum chamber and a pump for pumping out air inside the vacuum chamber to form a negative pressure inside the vacuum chamber. The start sensor and the end sensor are provided respectively at the bottom and the top of the metering tube, the top of the metering tube is in communication respectively with the vacuum chamber and the outside atmosphere via pipelines, the bottom of the metering tube is in communication respectively with the bath and the vacuum chamber via pipelines, and control parts are provided in each of the pipelines for controlling connection/disconnection thereof.

Abstract: A vertical gate-depleted single electron transistor (SET) is fabricated on a conducting or insulating substrate. A plurality of lightly doped basic materials and tunneling barriers are fabricated on top of a substrate, wherein at least two of the layers of basic materials sandwich the layers of tunneling barriers and at least two of the layers of tunneling barriers sandwich at least one of the layers of basic materials. A mesa is fabricated on top of the layers of basic materials and tunneling barriers, and has an undercut shape. An ohmic contact is fabricated on top of the mesa, and one or more gate Schottky contacts are fabricated on top of the layers of lightly doped basic materials and tunneling barriers. A quantum dot is induced by gate depletion, when a source voltage is set as zero, a drain voltage is set to be less than 0.1, and a gate voltage is set to be negative.

Abstract: A vertical gate-depleted single electron transistor (SET) is fabricated on a conducting or insulating substrate. A plurality of lightly doped basic materials and tunneling barriers are fabricated on top of a substrate, wherein at least two of the layers of basic materials sandwich the layers of tunneling barriers and at least two of the layers of tunneling barriers sandwich at least one of the layers of basic materials. A mesa is fabricated on top of the layers of basic materials and tunneling barriers, and has an undercut shape. An ohmic contact is fabricated on top of the mesa, and one or more gate Schottky contacts are fabricated on top of the layers of lightly doped basic materials and tunneling barriers. A quantum dot is induced by gate depletion, when a source voltage is set as zero, a drain voltage is set to be less than 0.1, and a gate voltage is set to be negative.

Abstract: An improved static alignment and an improved dynamic alignment are combined in a laser beam method and system that provides instantaneous and continuous information feedback to a golfer to allow the real time correction of defects arising from a golfer's stance, head movement, body movement, golf club alignment, and golf club swing.

Abstract: A device and a method for distributing measurement sample and cleaning tubes, wherein the device comprises: a diluent container for accommodating a diluent therein; an aspirating tube for sucking a measurement sample; a first syringe driven by a power unit and used to quantify the measurement sample; a second syringe driven by the power unit and used to quantify the diluent; a first switching unit connected to the first syringe, the second syringe and the diluent container, for switching between a communication of the second syringe with the diluent container and a communication of the second syringe with the first syringe; a bath; a sample buffer tube communicated with the first syringe at a port thereof; a dispensing tube for dispensing the measurement sample and/or the diluent into the bath; a second switching unit connected to an output port of the aspirating tube, the other port of the sample buffer tube and an input port of the dispensing tube, for switching between a communication of the other port of

Abstract: The present invention discloses a liquid volumetric device comprising a metering tube, a start sensor, an end sensor, a bath for storage of a sample to be metered, a vacuum chamber and a pump for pumping out air inside the vacuum chamber to form a negative pressure inside the vacuum chamber. The start sensor and the end sensor are provided respectively at the bottom and the top of the metering tube, the top of the metering tube is in communication respectively with the vacuum chamber and the outside atmosphere via pipelines, the bottom of the metering tube is in communication respectively with the bath and the vacuum chamber via pipelines, and control parts are provided in each of the pipelines for controlling connection/disconnection thereof.

Abstract: A method of updating velocity whereby corresponding reflections are identified from P-P and P-S near-offset waves received from a seismic source and reflected by a subsurface layer to form P-P and P-S depth consistent image gathers. A joint velocity inversion in depth is performed on the P-P and P-S depth consistent image gathers to estimate a vertical depth zo, vertical P-wave velocity vpo, and vertical S-wave velocity vso of the subsurface layer. An isotropic depth migration of P-P depth consistent image gathers is determined based upon the depth zo, P-wave velocity vpo, and S-wave velocity vso to estimate a vertical isotropic depth zpp of the subsurface layer. Anisotropic parameters &dgr; and &sgr; are calculated based upon the depth zpp, P-wave velocity vp0, and S-wave velocity vso. The above steps are repeated, beginning with the joint velocity inversion, until the P-wave velocity vpo and S-wave velocity vso are substantially unchanged.

Abstract: A method is disclosed for determining compressional (P) wave and shear (S) wave velocities from seismic data acquired using multiple component receivers. The method includes estimating interval velocity of P waves from earth's surface to a first reflector from P wave arrivals in the seismic data. A interval ratio of P wave to S wave velocity is estimated from earth's surface to the first reflector from P-S wave arrivals in the seismic data. An S wave interval velocity is estimated from the estimated P wave interval velocity and interval ratio. A depth is determined from the earth's surface to the first reflector using each of the P wave and S wave estimated interval velocities, the depths to the first reflector estimated using each of the P wave and S wave estimated interval velocities are balanced.

Abstract: A method and system for extraction of P-wave and S-wave velocities from multicomponent seismic data by joint velocity inversion is provided. The method and system accurately invert the P-wave and S-wave velocities from multicomponent seismic data via joint velocity inversion. The joint velocity inversion has proven to be an effective tool to extract the interval P-wave and shear wave velocities by decomposition and reconstruction of the P-wave and S-wave velocity fields. The method and inversion process is valid for land and marine seismic data, including surface reflection seismic ocean bottom seismic and vertical cable seismic data.

Abstract: A grooved channel Schottky contacted MOSFET has asymmetric source and drain regions. The MOSFET includes an undoped silicon substrate with a background doping concentration of less than about 1017 cm−3. A grooved channel is formed in a first surface of the substrate. A first metal silicide material is formed in a first side of the grooved channel, forming a source region, and a second metal silicide material is formed on a second side of the grooved channel, forming a drain region. A metal gate is formed in the grooved channel. The grooved structure allows the off-state current to be reduced to less than 50 pA/&mgr;m. Further, the feature size can be scaled down to 10 nm without strong short-channel effects (DIBL<0.063) and the gate delay (CV/I) is reduced to 2.4 ps.

Abstract: A grooved channel Schottky contacted MOSFET has asymmetric source and drain regions. The MOSFET includes an undoped silicon substrate with a background doping concentration of less than about 1017 cm−3. A grooved channel is formed in a first surface of the substrate. A first metal silicide material is formed in a first side of the grooved channel, forming a source region, and a second metal silicide material is formed on a second side of the grooved channel, forming a drain region. A metal gate is formed in the grooved channel. The grooved structure allows the off-state current to be reduced to less than 50 pA/&mgr;m. Further, the feature size can be scaled down to 10 nm without strong short-channel effects (DIBL<0.063) and the gate delay (CV/I) is reduced to 2.4 ps.

Abstract: A method and device for processing a seismic survey data set including: an actual source location, an actual receiver location, and an actual reflection event location is provided. The actual source location and actual receiver location are over a first layer having a first layer velocity and a first layer ray parameter, and over a second layer having a second layer velocity different from the first layer velocity and a second layer ray parameter different from the first layer ray parameter. The actual reflection event location is located below the first layer. The method comprises: providing the first layer velocity; providing the second layer velocity; providing the first layer ray parameter; providing the second layer ray parameter; determining a correction factor for the position of a ray path end dependant upon the first and second layer velocities and the first and second layer ray parameters; and applying the correction factor to the ray path end, wherein a ray path-corrected ray path end is provided.

Abstract: A method and apparatus for measuring the characteristics of microstructures by modulating a sample using a modulated source and utilizing a microscope to magnify a desired sample area and direct a monochromatic probe light source onto the desired microstructure of the sample. The probe light is reflected by the sample and the reflectance spectra is directed by the microscope and thereafter, is detected and transmitted to a computer to record or display the measured characteristic. Further, the computer is also used to control the brightness of the monochromatic probe light and to control the modulation frequency of the modulated source. The wavelength of the monochromatic probe light can also be varied by the computer. The magnification of the microscope can be varied so that the desired microstructure is visible and the probing light spot is precisely placed on it.

Abstract: A method for processing multi-source multi-component shear wave seismic data. The method comprises the steps of: acquiring four component shear wave seismic data; converting the data into a matrix that is a function of an angles of rotation relative to a reference axis; computing a time independent norm of the elements of the matrix; and finding the angles of rotation where the difference between the sum of the norms of the in-line elements and the sum of the norms of the cross-line elements is maximized.