Patents by Inventor Yaojia Chen
Yaojia Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240136948Abstract: This application describes examples of a grid-tied inverter apparatus and a grid-tied control method. In one example, the grid-tied inverter apparatus includes an inverter circuit, a controller, and a filter circuit. The controller is configured to adjust switching frequencies of a plurality of power switching transistors based on an output current value of the inverter apparatus, to adjust a resonance frequency of the filter circuit through different resonant branches, so that the resonance frequency meets a grid-tied requirement.Type: ApplicationFiled: October 17, 2023Publication date: April 25, 2024Inventors: Yunyu TANG, Lei SHI, Yaojia ZHANG, Dong CHEN, Kai XIN
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Publication number: 20240067036Abstract: Disclosed is a charging station capable of realizing mutual capacity aid, which comprises a plurality of charging units, a power bus and a mutual capacity aid bus. Each charging unit is powered by the power bus, and each charging unit provides mutual aid capacity for another charging unit through the mutual capacity aid bus or receives mutual aid capacity from other charging units through the mutual capacity aid bus. The charging station can realize rapid charging of electric vehicles, and can also realize mutual capacity aid.Type: ApplicationFiled: June 4, 2021Publication date: February 29, 2024Applicants: JIANGSU ELECTRIC POWER RESEARCH INSTITUTE CO., LTD., STATE GRID JIANGSU ELECTRIC POWER CO., LTD. RESEARCH INSTITUTEInventors: Tiankui SUN, Yubo YUAN, Mingming SHI, Xin FANG, Jinggang YANG, Shuyi ZHUANG, Xiaodong YUAN, Chenyu ZHANG, Lei GAO, Peng LI, Yaojia MA, Shu CHEN, Jing CHEN, Qun LI, Jian LIU
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Patent number: 10942315Abstract: The back reflection in photodiodes is caused by an abrupt index contrast between the input waveguide and the composite waveguide/light absorbing material. In order to improve the back reflection, it is proposed to introduce an angle between the waveguide and the leading edge of the light absorbing material. The angle will result in gradually changing the effective index between the index of the waveguide and the index of the composite section, and consequently lower the amount of light reflecting back.Type: GrantFiled: August 2, 2019Date of Patent: March 9, 2021Assignee: Elenion Technologies, LLCInventors: Saeed Fathololoumi, Yang Liu, Yaojia Chen
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Patent number: 10901150Abstract: A metal-contact-free photodetector includes an optically absorbing material, e.g. germanium, mounted on a device layer of a photonic integrated circuit, which includes a p-type contact and an n-type contact on opposite sides of a waveguide. The contacts are comprise of a plurality of independently doped regions ranging from lowest doped adjacent the waveguide to highest doped remote from the waveguide. An additional element is to add p and/or n doping on one or more of the sidewalls of the optically absorbing material, e.g Germanium. The advantage compared to the previously disclosed metal-contact-free photodetectors is that the bandwidth is much higher, and full speed is attained at lower voltage.Type: GrantFiled: June 12, 2019Date of Patent: January 26, 2021Assignee: Elenion Technologies, LLCInventors: Ari Novack, Yaojia Chen
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Publication number: 20200393618Abstract: A metal-contact-free photodetector includes an optically absorbing material, e.g. germanium, mounted on a device layer of a photonic integrated circuit, which includes a p-type contact and an n-type contact on opposite sides of a waveguide. The contacts are comprise of a plurality of independently doped regions ranging from lowest doped adjacent the waveguide to highest doped remote from the waveguide. An additional element is to add p and/or n doping on one or more of the sidewalls of the optically absorbing material, e.g Germanium. The advantage compared to the previously disclosed metal-contact-free photodetectors is that the bandwidth is much higher, and full speed is attained at lower voltage.Type: ApplicationFiled: June 12, 2019Publication date: December 17, 2020Inventors: Ari Novack, Yaojia Chen
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Patent number: 10741720Abstract: A light emitting diode includes a square quantum well structure, the quantum well structure including III-V materials. A dielectric layer is formed on the quantum well structure. A plasmonic metal is formed on the dielectric layer and is configured to excite surface plasmons in a waveguide mode that is independent of light wavelength generated by the quantum well structure to generate light.Type: GrantFiled: February 11, 2019Date of Patent: August 11, 2020Assignee: International Business Machines CorporationInventors: Yaojia Chen, Ning Li, Devendra K. Sadana, Jinghui Yang
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Publication number: 20190353845Abstract: The back reflection in photodiodes is caused by an abrupt index contrast between the input waveguide and the composite waveguide/light absorbing material. In order to improve the back reflection, it is proposed to introduce an angle between the waveguide and the leading edge of the light absorbing material. The angle will result in gradually changing the effective index between the index of the waveguide and the index of the composite section, and consequently lower the amount of light reflecting back.Type: ApplicationFiled: August 2, 2019Publication date: November 21, 2019Inventors: Saeed Fathololoumi, Yang Liu, Yaojia Chen
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Patent number: 10409005Abstract: The back reflection in photodiodes is caused by an abrupt index contrast between the input waveguide and the composite waveguide/light absorbing material. In order to improve the back reflection, it is proposed to introduce an angle between the waveguide and the leading edge of the light absorbing material. The angle will result in gradually changing the effective index between the index of the waveguide and the index of the composite section, and consequently lower the amount of light reflecting back.Type: GrantFiled: January 8, 2018Date of Patent: September 10, 2019Assignee: Elenion Technologies, LLCInventors: Saeed Fathololoumi, Yang Liu, Yaojia Chen
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Publication number: 20190212498Abstract: The back reflection in photodiodes is caused by an abrupt index contrast between the input waveguide and the composite waveguide/light absorbing material. In order to improve the back reflection, it is proposed to introduce an angle between the waveguide and the leading edge of the light absorbing material. The angle will result in gradually changing the effective index between the index of the waveguide and the index of the composite section, and consequently lower the amount of light reflecting back.Type: ApplicationFiled: January 8, 2018Publication date: July 11, 2019Inventors: Saeed Fathololoumi, Yang Liu, Yaojia Chen
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Publication number: 20190189842Abstract: A light emitting diode includes a square quantum well structure, the quantum well structure including III-V materials. A dielectric layer is formed on the quantum well structure. A plasmonic metal is formed on the dielectric layer and is configured to excite surface plasmons in a waveguide mode that is independent of light wavelength generated by the quantum well structure to generate light.Type: ApplicationFiled: February 11, 2019Publication date: June 20, 2019Inventors: Yaojia Chen, Ning Li, Devendra K. Sadana, Jinghui Yang
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Patent number: 10263142Abstract: A light emitting diode includes a square quantum well structure, the quantum well structure including III-V materials. A dielectric layer is formed on the quantum well structure. A plasmonic metal is formed on the dielectric layer and is configured to excite surface plasmons in a waveguide mode that is independent of light wavelength generated by the quantum well structure to generate light.Type: GrantFiled: February 2, 2018Date of Patent: April 16, 2019Assignee: International Business Machines CorporationInventors: Yaojia Chen, Ning Li, Devendra K. Sadana, Jinghui Yang
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Patent number: 10032950Abstract: An avalanche photodiode, and related method of manufacture and method of use thereof, that includes a first contact layer; a multiplication layer, wherein the multiplication layer includes AlInAsSb; a charge, wherein the charge layer includes AlInAsSb; an absorption, wherein the absorption layer includes AlInAsSb; a blocking layer; and a second contact layer.Type: GrantFiled: February 22, 2017Date of Patent: July 24, 2018Assignee: University of Virginia Patent FoundationInventors: Joe C. Campbell, Min Ren, Madison Woodson, Yaojia Chen, Seth Bank, Scott Maddox
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Publication number: 20180175242Abstract: A light emitting diode includes a square quantum well structure, the quantum well structure including III-V materials. A dielectric layer is formed on the quantum well structure. A plasmonic metal is formed on the dielectric layer and is configured to excite surface plasmons in a waveguide mode that is independent of light wavelength generated by the quantum well structure to generate light.Type: ApplicationFiled: February 2, 2018Publication date: June 21, 2018Inventors: Yaojia Chen, Ning Li, Devendra K. Sadana, Jinghui Yang
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Patent number: 9935239Abstract: A light emitting diode includes a square quantum well structure, the quantum well structure including III-V materials. A dielectric layer is formed on the quantum well structure. A plasmonic metal is formed on the dielectric layer and is configured to excite surface plasmons in a waveguide mode that is independent of light wavelength generated by the quantum well structure to generate light.Type: GrantFiled: September 15, 2016Date of Patent: April 3, 2018Assignee: International Business Machines CorporationInventors: Yaojia Chen, Ning Li, Devendra K. Sadana, Jinghui Yang
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Publication number: 20180076353Abstract: A light emitting diode includes a square quantum well structure, the quantum well structure including III-V materials. A dielectric layer is formed on the quantum well structure. A plasmonic metal is formed on the dielectric layer and is configured to excite surface plasmons in a waveguide mode that is independent of light wavelength generated by the quantum well structure to generate light.Type: ApplicationFiled: September 15, 2016Publication date: March 15, 2018Inventors: Yaojia Chen, Ning Li, Devendra K. Sadana, Jinghui Yang
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Publication number: 20170244002Abstract: An avalanche photodiode, and related method of manufacture and method of use thereof, that includes a first contact layer; a multiplication layer, wherein the multiplication layer includes AlInAsSb; a charge, wherein the charge layer includes AlInAsSb; an absorption, wherein the absorption layer includes AlInAsSb; a blocking layer; and a second contact layer.Type: ApplicationFiled: February 22, 2017Publication date: August 24, 2017Applicant: University of Virginia Patent FoundationInventors: Joe C. Campbell, Min Ren, Madison Woodson, Yaojia Chen, Seth Bank, Scott Maddox