Abstract: A semiconductor device with different configurations of gate structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a gate opening on the fin structure, forming a metallic oxide layer within the gate opening, forming a first dielectric layer on the metallic oxide layer, forming a second dielectric layer on the first dielectric layer, forming a work function metal (WFM) layer on the second dielectric layer, and forming a gate metal fill layer on the WFM layer. The forming the first dielectric layer includes depositing an oxide material with an oxygen areal density less than an oxygen areal density of the metallic oxide layer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first source/drain epitaxial feature formed over a substrate, a second source/drain epitaxial feature formed over the substrate, two or more semiconductor layers disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, a gate electrode layer surrounding a portion of one of the two or more semiconductor layers, a first dielectric region disposed in the substrate and in contact with a first side of the first source/drain epitaxial feature, and a second dielectric region disposed in the substrate and in contact with a first side of the second source/drain epitaxial feature, the second dielectric region being separated from the first dielectric region by a substrate.

Abstract: A display device is provided. The display device includes a display panel set having a peripheral zone, a backlight module including a frame, an adhesive material disposed between the peripheral zone of the display panel set and the frame, and a plurality of support elements disposed on the frame and in contact with the adhesive material.

Abstract: A display device is provided. The display device includes a display panel set having a peripheral zone, a backlight module including a frame, an adhesive material disposed between the peripheral zone of the display panel set and the frame, and a plurality of support elements disposed on the frame and in contact with the adhesive material.

Abstract: A semiconductor laser device includes a substrate having a first surface and a second surface opposite to the first surface, an active region formed on the second surface of the substrate, a cladding layer formed on the active region, and an insulation region formed in the cladding layer to form on the second surface of the substrate a first laser region having a first size and a second laser region having a second size different from the first size. The first laser region is used for generating a first optical spectrum having a first laser mode channel space. The second laser region is used for generating a second optical spectrum having a second laser mode channel space. A combination of the first optical spectrum and the second optical spectrum forms a single mode laser. Without any gratings, the semiconductor laser device is easy to be fabricated and has a low fabrication cost.

Abstract: A semiconductor laser device includes a substrate having a first surface and a second surface opposite to the first surface, an active region formed on the second surface of the substrate, a cladding layer formed on the active region, and an insulation region formed in the cladding layer to form on the second surface of the substrate a first laser region having a first size and a second laser region having a second size different from the first size. The first laser region is used for generating a first optical spectrum having a first laser mode channel space. The second laser region is used for generating a second optical spectrum having a second laser mode channel space. A combination of the first optical spectrum and the second optical spectrum forms a single mode laser. Without any gratings, the semiconductor laser device is easy to be fabricated and has a low fabrication cost.