Abstract: A method for manufacturing a semiconductor product is provided. The method comprises forming a semiconductor device within a wafer utilizing a predetermined number of masks. The method further comprises forming a first low-leakage semiconductor device within the wafer utilizing a first set of additional masks. The first low-leakage semiconductor device has a lower leakage current than that of the semiconductor device.

Abstract: A high performance and high density integrated circuit includes interbank bitlines and a bank select structure which improve the vertical pitch of the integrated circuit layout and provide the selective access of data stored in the memory cells. The bank select structures includes bank select transistors which are located and oriented adjacent metal-to-diffusion region contacts such that vertical pitch of the layout is improved, thus promoting a higher density memory array. The bank select transistor is also formed such that conductivity is increased and impedance decreased due to a relatively wide channel width. On the substrate, a plurality of bitlines, including interbank bitlines and intrabank bitlines, and a plurality of wordlines are provided to form memory cells. In bank BK.sub.N, each interbank bitline extends into either bank BK.sub.N-1 or BK.sub.N+1 adjacent to bank BK.sub.N. For the selection of a cell or plurality of cells in bank BK.sub.N, bank BK.sub.