Patents by Inventor Yaov Nissan-Cohen

Yaov Nissan-Cohen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Mask programmable read-only memory (ROM) cell
    Patent number: 6809948
    Abstract: A multi-bit programmable memory cell is provided that includes an access transistor and a plurality of N anti-fuse elements. The access transistor has a source coupled to a source line and a gate coupled to a word line. Each of the anti-fuse elements has a first terminal coupled to a drain of the access transistor, and a second terminal coupled to a corresponding bit line. At most, only one of the anti-fuse elements is programmed. The memory cell is capable of storing M bits, wherein N=2M−1. A method is provided for both programming and reading the memory cell. In another embodiment, the anti-fuse elements can be replaced with mask-programmable elements.
    Type: Grant
    Filed: May 6, 2003
    Date of Patent: October 26, 2004
    Assignee: Tower Semiconductor, Ltd.
    Inventors: Ishai Nachumovsky, Yaov Nissan-Cohen, Robert J. Strain
  • Multi-bit programmable memory cell having multiple anti-fuse elements
    Publication number: 20030223291
    Abstract: A multi-bit programmable memory cell is provided that includes an access transistor and a plurality of N anti-fuse elements. The access transistor has a source coupled to a source line and a gate coupled to a word line. Each of the anti-fuse elements has a first terminal coupled to a drain of the access transistor, and a second terminal coupled to a corresponding bit line. At most, only one of the anti-fuse elements is programmed. The memory cell is capable of storing M bits, wherein N=2M−1. A method is provided for both programming and reading the memory cell. In another embodiment, the anti-fuse elements can be replaced with mask-programmable elements.
    Type: Application
    Filed: May 6, 2003
    Publication date: December 4, 2003
    Applicant: Tower Semiconductor, Ltd.
    Inventors: Ishai Nachumovsky, Yaov Nissan-Cohen, Robert J. Strain
  • Multi-bit programmable memory cell having multiple anti-fuse elements
    Patent number: 6590797
    Abstract: A multi-bit programmable memory cell is provided that includes an access transistor and a plurality of N anti-fuse elements. The access transistor has a source coupled to a source line and a gate coupled to a word line. Each of the anti-fuse elements has a first terminal coupled to a drain of the access transistor, and a second terminal coupled to a corresponding bit line. At most, only one of the anti-fuse elements is programmed. The memory cell is capable of storing M bits, wherein N=2M−1. A method is provided for both programming and reading the memory cell. In another embodiment, the anti-fuse elements can be replaced with mask-programmable elements.
    Type: Grant
    Filed: January 9, 2002
    Date of Patent: July 8, 2003
    Assignee: Tower Semiconductor Ltd.
    Inventors: Ishai Nachumovsky, Yaov Nissan-Cohen, Robert J. Strain