Abstract: A multi-trench schottky diode includes a semiconductor base layer, a back metal layer, an epitaxial layer, an interlayer dielectric layer, a first metal layer, a passivation layer and a second metal layer. The epitaxial layer on the semiconductor base layer includes a termination trench structure, a first trench structure, a second trench structure and a third trench structure. The dielectric layer is on the epitaxial layer in a termination area. The first metal layer stacked on the termination trench structure and the interlayer dielectric layer extends between the second trench structure and the third trench structure. The passivation layer is on the first metal layer and the interlayer dielectric layer. The second metal layer on the first metal layer and the passivation layer extends to the first trench structure. Thus, the electric field is dispersed and the voltage breakdown can be avoided with the trench structures in the termination area.

Abstract: A multi-trench schottky diode includes a semiconductor base layer, a back metal layer, an epitaxial layer, an interlayer dielectric layer, a first metal layer, a passivation layer and a second metal layer. The epitaxial layer on the semiconductor base layer includes a termination trench structure, a first trench structure, a second trench structure and a third trench structure. The dielectric layer is on the epitaxial layer in a termination area. The first metal layer stacked on the termination trench structure and the interlayer dielectric layer extends between the second trench structure and the third trench structure. The passivation layer is on the first metal layer and the interlayer dielectric layer. The second metal layer on the first metal layer and the passivation layer extends to the first trench structure. Thus, the electric field is dispersed and the voltage breakdown can be avoided with the trench structures in the termination area.

Abstract: A Schottky diode with multiple guard ring structures includes a semiconductor base layer, a back metal layer, an epitaxial layer, a dielectric layer, a first metal layer, a passivation layer and a second metal layer. The epitaxial layer on the semiconductor base layer includes a terminal trench structure, a first ion implantation guard ring, a second ion implantation guard ring and a third ion implantation guard ring. The dielectric layer is on the epitaxial layer in a termination area. The first metal layer is on the terminal trench structure and the dielectric layer. The passivation layer is on the first metal layer and the dielectric layer. The second metal layer is on the first metal layer and the passivation layer. Widths of the first, second and third ion implantation guard rings decrease in order, so that the voltage can be distributed step by step.

Abstract: A Schottky diode with multiple guard ring structures includes a semiconductor base layer, a back metal layer, an epitaxial layer, a dielectric layer, a first metal layer, a passivation layer and a second metal layer. The epitaxial layer on the semiconductor base layer includes a terminal trench structure, a first ion implantation guard ring, a second ion implantation guard ring and a third ion implantation guard ring. The dielectric layer is on the epitaxial layer in a termination area. The first metal layer is on the terminal trench structure and the dielectric layer. The passivation layer is on the first metal layer and the dielectric layer. The second metal layer is on the first metal layer and the passivation layer. Widths of the first, second and third ion implantation guard rings decrease in order, so that the voltage can be distributed step by step.