Abstract: Methods and apparatus for processing a substrate is provided herein. For example, the method comprises prior to processing a substrate, obtaining a first measurement at a first point along a surface of the substrate, in a process chamber processing the substrate in a presence of an electric field, subsequent to processing the substrate, obtaining a second measurement at the first point along the surface of the substrate, and determining whether substrate warpage occurred based upon analysis of the first measurement and the second measurement.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method comprises in a process chamber, processing a substrate in a presence of an electric field, subsequently capturing an image of the substrate, determining whether substrate arcing occurred based upon analysis of the captured image, and one of continuing processing of the substrate when no arcing is determined or stopping processing of the substrate when arcing is determined.

Abstract: Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a first temperature; and cooling the first aluminum region atop a substrate to a second temperature at a rate sufficient to increase the first grain size to a second grain size.

Abstract: Methods and apparatus for protecting parts of a process chamber from thermal cycling effects of deposited materials. In some embodiments, a method of protecting the part of the process chamber includes wet etching the part with a weak alkali or acid, cleaning the part by bead blasting, coating at least a portion of a surface of the part with a stress relief layer. The stress relief layer forms a continuous layer that is approximately 50 microns to approximately 250 microns thick and is configured to preserve a structural integrity of the part from the thermal cycling of aluminum deposited on the part. The method may also include wet cleaning of the part with a heated deionized water rinse after formation of the stress relief layer.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a first gas at a first flow rate to a substrate support disposed within an interior volume of a deposition chamber and at a second flow rate into the interior volume of the deposition chamber; decreasing the first flow rate of the first gas to a third flow rate; supplying DC power or DC power and an AC power for inducing an AC bias therebetween; supplying a second gas into the deposition chamber in a switching mode while supplying the first gas at the second flow rate and the third flow rate and increasing at least one of the DC power or AC power to increase the AC bias; and while supplying the second gas in the switching mode, depositing material from the target onto a substrate to form a barrier layer.

Abstract: Methods and apparatus for protecting parts of a process chamber from thermal cycling effects of deposited materials. In some embodiments, a method of protecting the part of the process chamber includes wet etching the part with a weak alkali or acid, cleaning the part by bead blasting, coating at least a portion of a surface of the part with a stress relief layer. The stress relief layer forms a continuous layer that is approximately 50 microns to approximately 250 microns thick and is configured to preserve a structural integrity of the part from the thermal cycling of aluminum deposited on the part. The method may also include wet cleaning of the part with a heated deionized water rinse after formation of the stress relief layer.

Abstract: Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a first temperature; and cooling the first aluminum region atop a substrate to a second temperature at a rate sufficient to increase the first grain size to a second grain size.