Abstract: The present disclosure provides a metering and correcting method and system for an ultrasonic gas meter based on smart gas Internet of Things (IoT). The metering and correcting method is implemented on a smart gas device management platform of the metering and correcting system and includes: in response to receiving a co-correction request from the ultrasonic gas meter, obtaining ultrasonic data and gas medium data; determining a target signal stability value of the ultrasonic gas meter based on the ultrasonic data and the gas medium data; in response to the target signal stability value not meeting a second preset condition, determining a co-correction strategy and sending the co-correction strategy to the ultrasonic gas meter; and evaluating a correction accuracy of the ultrasonic gas meter for performing a correction process based on the co-correction strategy.

Abstract: The embodiments of the present disclosure provide a method and system for compensating ultrasonic metering based on a smart gas Internet of Things system, comprising: determining a first preset condition based on a gas pipeline feature obtained from an external database, wherein the first preset condition refers to a judgment condition for evaluating whether a flow compensation is required; obtaining a gas transportation feature and an environmental feature based on at least one sensor; determining a compensation scheme based on the gas transportation feature, the environmental feature, and the first preset condition, wherein the compensation scheme includes at least one of a flow rate compensation coefficient, a flow compensation parameter, a temperature compensation coefficient, or a pressure compensation coefficient; sending the compensation scheme to an ultrasonic metering device, and controlling the ultrasonic metering device to determine updated flow metering data according to the compensation scheme.

Abstract: The present disclosure discloses a method for automatically identifying south troughs by improved Laplace and relates to the technical field of meteorology. The method includes the following steps: acquiring grid data of a geopotential height field; calculating a gradient field of the geopotential height field in an x direction; searching for a turning point where a gradient value turned from being negative to being positive, and cleaning the gradient field; calculating a divergence of the x direction to obtain an improved Laplacian numerical value L?; performing 0,1 binarization processing on the L? to obtain a black-and-white image and a plurality of targets of potential troughs, merging the black-and-white image and the plurality of targets of the potential troughs by expansion, recovering original scale through erosion, and selecting an effective target through an angle of direction of a contour and an axial ratio.

Abstract: The present disclosure provides a method, an Internet of Things (IoT) system, and a medium for presetting emergency devices of smart gas. The method comprises determining gas supply and demand features based on node data and downstream user features of a gas pipeline network. The method also comprises determining a plurality of gas emergency regions based on the gas supply and demand features, and continuously obtaining location data and carrying data of a plurality of emergency devices. The method further comprises determining a dynamic deployment scheme for the plurality of emergency devices based on the plurality of gas emergency regions, the location data, and the carrying data, the dynamic deployment scheme including locations of the plurality of emergency devices of at least one time point, generating a movement instruction based on the dynamic deployment scheme, and sending the movement instruction to the plurality of emergency devices.

Abstract: An encoder includes a first processing circuit and a second processing circuit. The first processing circuit is configured to perform intraframe prediction on a sub-image-block according to reconstructed neighboring pixels of the sub-image-block to determine an optimal intraframe prediction direction of the sub-image-block. The second processing circuit is configured to generate quantized data of the sub-image-block according to the optimal intraframe prediction direction of the sub-image-block, and perform reconstruction on the sub-image-block according to the quantized data of the first sub-image-block. The sub-image-block is one of sub-image-blocks for processing obtained by dividing a to-be-encoded image block in a division mode.

Abstract: A microscope probe including a coaxial tip and a coplanar waveguide (CPW) formed on a silicon substrate is provided. The coaxial tip includes a tip shaft and a tip nib formed from the silicon substrate with the tip nib extending from the tip shaft opposite the silicon substrate. The tip shaft includes a first layer of a first conductive material formed over the silicon substrate, a second layer of an insulating material formed over the first layer, and a third layer of a second conductive material formed over the second layer. The tip nib includes the first layer of the first conductive material formed over the silicon substrate and exposed from the second layer and the third layer of the tip shaft. The CPW includes a center conductor formed from the first layer of the first conductive material and a first and a second outer conductor formed from the second layer of the second conductive material.

Abstract: A microscope probe including a coaxial tip and a coplanar waveguide (CPW) formed on a silicon substrate is provided. The coaxial tip includes a tip shaft and a tip nib formed from the silicon substrate with the tip nib extending from the tip shaft opposite the silicon substrate. The tip shaft includes a first layer of a first conductive material formed over the silicon substrate, a second layer of an insulating material formed over the first layer, and a third layer of a second conductive material formed over the second layer. The tip nib includes the first layer of the first conductive material formed over the silicon substrate and exposed from the second layer and the third layer of the tip shaft. The CPW includes a center conductor formed from the first layer of the first conductive material and a first and a second outer conductor formed from the second layer of the second conductive material.

Abstract: A method of fabricating high aspect ratio micromechanical tips is provided. The method includes, but is not limited to, forming an etchant protective island on a surface of a silicon substrate with the silicon substrate exposed around the island; isotropically etching the silicon substrate by reactive ion etching around the protective island to partially undercut the silicon substrate beneath the protective island; anisotropically etching, by deep reactive ion etching, the silicon surrounding the island to a desired depth to define a tip shaft of the desired height supported at a base by the substrate; removing the protective island from the tip; and sharpening the top of the tip shaft to an apex. Using the method, micromechanical tips having heights greater than at least 30 ?m have been obtained while maintaining the vertical sidewall necessary for both AFM and scanning near-field microwave microscopy (SNMM) profiling applications.

Abstract: A method of fabricating high aspect ratio micromechanical tips is provided. The method includes, but is not limited to, forming an etchant protective island on a surface of a silicon substrate with the silicon substrate exposed around the island; isotropically etching the silicon substrate by reactive ion etching around the protective island to partially undercut the silicon substrate beneath the protective island; anisotropically etching, by deep reactive ion etching, the silicon surrounding the island to a desired depth to define a tip shaft of the desired height supported at a base by the substrate; removing the protective island from the tip; and sharpening the top of the tip shaft to an apex. Using the method, micromechanical tips having heights greater than at least 30 ?m have been obtained while maintaining the vertical sidewall necessary for both AFM and scanning near-field microwave microscopy (SNMM) profiling applications.