Patents by Inventor Yari Ferrante
Yari Ferrante has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11925124Abstract: A magnetic structure, a magnetic device incorporating the magnetic structure and a method for providing the magnetic structure are described. The magnetic structure includes a magnetic layer, a templating structure and a resistive insertion layer. The magnetic layer includes a Heusler compound and has a perpendicular magnetic anisotropy energy exceeding an out-of-plane demagnetization energy. The templating structure has a crystal structure configured to template at least one of the Heusler compound and the resistive insertion layer. The magnetic layer is on the templating structure. The resistive insertion layer is configured to reduce magnetic damping for the Heusler compound and allow for templating of the Heusler compound.Type: GrantFiled: March 30, 2021Date of Patent: March 5, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Jaewoo Jeong, Panagiotis Charilaos Filippou, Yari Ferrante, Chirag Garg, Mahesh Samant, Ikhtiar, Dmytro Apalkov
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Patent number: 11804321Abstract: A device including a templating structure and a magnetic layer on the templating structure is described. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. Further, E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir, D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. The magnetic layer includes at least one of a Heusler compound and an L10 compound, the magnetic layer being in contact with the templating structure.Type: GrantFiled: November 20, 2020Date of Patent: October 31, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Jaewoo Jeong, Panagiotis Charilaos Filippou, Yari Ferrante, Chirag Garg, Stuart Stephen Papworth Parkin, Mahesh Samant
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Publication number: 20230320231Abstract: A magnetoresistive random-access memory cell includes a templating layer. The templating layer includes a binary alloy having an alternating layer lattice structure. The cell further includes a half metallic Heusler layer including a half metallic Heusler material having a tetragonal lattice structure. The half metallic Heusler layer is located outward of the templating layer, and has a Heusler in-plane lattice constant that is different from an in-plane lattice constant in a cubic form of the half metallic Heusler material. A tunnel barrier is located outward of the half metallic Heusler layer, and a magnetic layer is located outward of the tunnel barrier.Type: ApplicationFiled: March 31, 2022Publication date: October 5, 2023Inventors: SERGEY FALEEV, Panagiotis Charilaos Filippou, Yari Ferrante, Chirag Garg, Mahesh Samant, Jaewoo Jeong
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Publication number: 20230317129Abstract: A magnetoresistive random-access memory cell includes a templating layer. The templating layer includes a binary alloy having an alternating layer lattice structure. The cell further includes a half metallic half-Heusler layer including a half metallic half-Heusler material having a tetragonal lattice structure. The half metallic half-Heusler layer is located outward of the templating layer, and has a half-Heusler in-plane lattice constant that is different from an in-plane lattice constant in a cubic form of the half metallic half-Heusler material. A tunnel barrier is located outward of the half metallic half-Heusler layer, and a magnetic layer is located outward of the tunnel barrier.Type: ApplicationFiled: March 31, 2022Publication date: October 5, 2023Inventors: SERGEY FALEEV, Panagiotis Charilaos Filippou, Yari Ferrante, Chirag Garg, Mahesh Samant, Jaewoo Jeong
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Patent number: 11756578Abstract: A magnetic device and method for providing the magnetic device are disclosed. The magnetic device includes a multilayer structure and a magnetic layer. The multilayer structure includes alternating layers of A and E. A includes a first material. The first material includes at least one of Co, Ru, or Ir. The first material may include an IrCo alloy. E includes at least one other material that includes Al. The other material(s) may include an alloy selected from AlGa, AlSn, AlGe, AlGaGe, AlGaSn, AlGeSn, and AlGaGeSn. A composition of the multilayer structure is represented by A1-xEx, where x is at least 0.45 and not more than 0.55. The magnetic layer includes an Al-doped Heusler compound. The magnetic layer shares an interface with the multilayer structure.Type: GrantFiled: May 12, 2021Date of Patent: September 12, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Jaewoo Jeong, Sergey Faleev, Panagiotis Charilaos Filippou, Yari Ferrante, Stuart Stephen Papworth Parkin, Mahesh Samant
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Patent number: 11751486Abstract: A device including a templating structure and a magnetic layer is described. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir. D includes at least 50 atomic percent of the at least one constituent. The magnetic layer is on the templating structure and includes at least one of a Heusler compound and an L10 compound. The magnetic layer is in contact with the templating structure and being magnetic at room temperature.Type: GrantFiled: November 20, 2020Date of Patent: September 5, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Jaewoo Jeong, Panagiotis Charilaos Filippou, Yari Ferrante, Chirag Garg, Stuart Stephen Papworth Parkin, Mahesh Samant
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Publication number: 20230180624Abstract: Integrated circuit devices may include a first magnetic layer, a second magnetic layer, and a tunnel barrier layer that is between the first magnetic layer and the second magnetic layer and has a hexagonal crystal structure. The first magnetic layer may include a multi-layered structure of nCo/mX that is magnetic at room temperature and has a hexagonal crystal structure, and X may be Ni, Ag, Au, Pt, Pd or Cu. n and m are each numbers of atomic layers, n may range from 0.5 to 3.5, and m may range from 0.5 to 4.5.Type: ApplicationFiled: March 7, 2022Publication date: June 8, 2023Inventors: Sergey Faleev, Panagiotis Charilaos Filippou, Yari Ferrante, Chirag Garg, Mahesh Samant, Jaewoo Jeong
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Patent number: 11665979Abstract: A method for providing a magnetic device and the magnetic device so provided are described. The magnetic device includes a magnetic layer having a surface. In some aspects, the magnetic layer is a free layer, a reference layer, or a top layer thereof. A tunneling barrier layer is deposited on the magnetic layer. At least a portion of the tunneling barrier layer adjacent to the magnetic layer is deposited at a deposition angle of at least thirty degrees from a normal to the surface of the magnetic layer. In some aspects, the deposition angle is at least fifty degrees.Type: GrantFiled: April 3, 2020Date of Patent: May 30, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Jaewoo Jeong, Mahesh G. Samant, Yari Ferrante, Panagiotis Charilaos Filippou, Chirag Garg, Stuart Stephen Papworth Parkin
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Publication number: 20230116592Abstract: A device is provided. The device includes a multi-layered structure that is non-magnetic at room temperature, the multi-layered structure comprising alternating layers of Co and E, wherein E comprises at least one other element selected from the group consisting of Ge, Ga, Sn and Al, wherein a composition of the multi-layered structure is represented by Co1?xEx, with x being in a range from 0.42 to 0.55. The device also includes a combined layer provided in contact with the multi-layered structure, the combined layer including an insertion layer comprising Co or Fe or Mn or Al in contact with a Heusler compound.Type: ApplicationFiled: October 13, 2021Publication date: April 13, 2023Inventors: MAHESH SAMANT, PANAGIOTIS CHARILAOS FILIPPOU, YARI FERRANTE, CHIRAG GARG, JAEWOO JEONG, . IKHTIAR
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Patent number: 11557721Abstract: A device including a multi-layered structure that includes: a first layer that includes a first magnetic Heusler compound; a second layer that is non-magnetic at room temperature and includes both Ru and at least one other element E, wherein the composition of the second layer is represented by Ru1?xEx, with x being in the range from 0.45 to 0.55; and a third layer including a second magnetic Heusler compound. The multi-layered structure may overlay a substrate. The device may include a tunnel barrier overlying the multi-layered structure.Type: GrantFiled: February 12, 2021Date of Patent: January 17, 2023Assignees: International Business Machines CorporationInventors: Panagiotis Charilaos Filippou, Chirag Garg, Yari Ferrante, Stuart S. P. Parkin, Jaewoo Jeong, Mahesh G. Samant
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Patent number: 11538987Abstract: A device including a first magnetic layer, a templating structure and a second magnetic layer is described. The templating structure is on the first magnetic layer. The second magnetic layer is on the templating structure. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir. D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. At least one of the first magnetic layer and the second magnetic layer includes at least one of a Heusler compound and an L10 compound.Type: GrantFiled: November 20, 2020Date of Patent: December 27, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Jaewoo Jeong, Panagiotis Charilaos Filippou, Yari Ferrante, Chirag Garg, Stuart Stephen Papworth Parkin, Mahesh Samant
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Publication number: 20220262555Abstract: A magnetic device and method for providing the magnetic device are disclosed. The magnetic device includes a multilayer structure and a magnetic layer. The multilayer structure includes alternating layers of A and E. A includes a first material. The first material includes at least one of Co, Ru, or Ir. The first material may include an IrCo alloy. E includes at least one other material that includes Al. The other material(s) may include an alloy selected from AlGa, AlSn, AlGe, AlGaGe, AlGaSn, AlGeSn, and AlGaGeSn. A composition of the multilayer structure is represented by A1-xEx, where x is at least 0.45 and not more than 0.55. The magnetic layer includes an Al-doped Heusler compound. The magnetic layer shares an interface with the multilayer structure.Type: ApplicationFiled: May 12, 2021Publication date: August 18, 2022Inventors: Jaewoo Jeong, Sergey Faleev, Panagiotis Charilaos Filippou, Yari Ferrante, Stuart Stephen Papworth Parkin, Mahesh Samant
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Publication number: 20220223783Abstract: A magnetic structure, a magnetic device incorporating the magnetic structure and a method for providing the magnetic structure are described. The magnetic structure includes a magnetic layer, a templating structure and a resistive insertion layer. The magnetic layer includes a Heusler compound and has a perpendicular magnetic anisotropy energy exceeding an out-of-plane demagnetization energy. The templating structure has a crystal structure configured to template at least one of the Heusler compound and the resistive insertion layer. The magnetic layer is on the templating structure. The resistive insertion layer is configured to reduce magnetic damping for the Heusler compound and allow for templating of the Heusler compound.Type: ApplicationFiled: March 30, 2021Publication date: July 14, 2022Inventors: Jaewoo Jeong, Panagiotis Charilaos Filippou, Yari Ferrante, Chirag Garg, Mahesh Samant, Ikhtiar, Dmytro Apalkov
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Publication number: 20220165938Abstract: A device including a first magnetic layer, a templating structure and a second magnetic layer is described. The templating structure is on the first magnetic layer. The second magnetic layer is on the templating structure. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir. D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. At least one of the first magnetic layer and the second magnetic layer includes at least one of a Heusler compound and an L10 compound.Type: ApplicationFiled: November 20, 2020Publication date: May 26, 2022Inventors: Jaewoo Jeong, Panagiotis Charilaos Filippou, Yari Ferrante, Chirag Garg, Stuart Stephen Papworth Parkin, Mahesh Samant
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Publication number: 20220165469Abstract: A device including a templating structure and a magnetic layer on the templating structure is described. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. Further, E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir, D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. The magnetic layer includes at least one of a Heusler compound and an L10 compound, the magnetic layer being in contact with the templating structure.Type: ApplicationFiled: November 20, 2020Publication date: May 26, 2022Inventors: Jaewoo Jeong, Panagiotis Charilaos Filippou, Yari Ferrante, Chirag Garg, Stuart Stephen Papworth Parkin, Mahesh Samant
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Publication number: 20220165939Abstract: A device including a templating structure and a magnetic layer is described. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir. D includes at least 50 atomic percent of the at least one constituent. The magnetic layer is on the templating structure and includes at least one of a Heusler compound and an L10 compound. The magnetic layer is in contact with the templating structure and being magnetic at room temperature.Type: ApplicationFiled: November 20, 2020Publication date: May 26, 2022Inventors: Jaewoo Jeong, Panagiotis Charilaos Filippou, Yari Ferrante, Chirag Garg, Stuart Stephen Papworth Parkin, Mahesh Samant
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Publication number: 20210175416Abstract: A method for providing a magnetic device and the magnetic device so provided are described. The magnetic device includes a magnetic layer having a surface. In some aspects, the magnetic layer is a free layer, a reference layer, or a top layer thereof. A tunneling barrier layer is deposited on the magnetic layer. At least a portion of the tunneling barrier layer adjacent to the magnetic layer is deposited at a deposition angle of at least thirty degrees from a normal to the surface of the magnetic layer. In some aspects, the deposition angle is at least fifty degrees.Type: ApplicationFiled: April 3, 2020Publication date: June 10, 2021Inventors: Jaewoo Jeong, Mahesh G. Samant, Yari Ferrante, Panagiotis Charilaos Filippou, Chirag Garg, Stuart Stephen Papworth Parkin
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Publication number: 20210167280Abstract: A device including a multi-layered structure that includes: a first layer that includes a first magnetic Heusler compound; a second layer that is non-magnetic at room temperature and includes both Ru and at least one other element E, wherein the composition of the second layer is represented by Ru1?xEx, with x being in the range from 0.45 to 0.55; and a third layer including a second magnetic Heusler compound. The multi-layered structure may overlay a substrate. The device may include a tunnel barrier overlying the multi-layered structure.Type: ApplicationFiled: February 12, 2021Publication date: June 3, 2021Inventors: Panagiotis Charilaos Filippou, Chirag Garg, Yari Ferrante, Stuart S.P. Parkin, Jaewoo Jeong, Mahesh G. Samant
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Patent number: 11005029Abstract: A device is disclosed. The device includes a first magnetic layer and a tunnel barrier. The first magnetic layer has a volume uniaxial magnetic crystalline anisotropy. The magnetic moment of the first layer is substantially perpendicular to the first layer. The tunnel barrier is in proximity to the first magnetic layer. The orientation of the magnetic moment of the first magnetic layer is reversed by spin transfer torque induced by current passing between and through the first magnetic layer and the tunnel barrier.Type: GrantFiled: September 28, 2018Date of Patent: May 11, 2021Assignees: Samsung Electronics Co., Ltd.Inventors: Jaewoo Jeong, Mahesh G. Samant, Stuart S. P. Parkin, Yari Ferrante
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Patent number: 10957848Abstract: Devices are described that include a multi-layered structure that comprises three layers. The first layer is a magnetic Heusler compound, the second layer (acting as a spacer layer) is non-magnetic at room temperature and comprises alternating layers of Ru and at least one other element E (preferably Al; or Ga or Al alloyed with Ga, Ge, Sn or combinations thereof), and the third layer is also a magnetic Heusler compound. The composition of the second layer is represented by Ru1?xEx, with x being in the range from 0.45 to 0.55. An MRAM element may be constructed by forming, in turn, a substrate, the multi-layered structure, a tunnel barrier, and an additional magnetic layer (whose magnetic moment is switchable).Type: GrantFiled: February 8, 2019Date of Patent: March 23, 2021Assignees: International Business Machines CorporationInventors: Panagiotis Charilaos Filippou, Chirag Garg, Yari Ferrante, Stuart S. P. Parkin, Jaewoo Jeong, Mahesh G. Samant