Abstract: A driver for performing efficient low-power high-swing modulation, which comprises a first plurality of N controllable switching elements and introducing low impedance between the contacts in response to a low control level and vice versa; a second plurality of N controllable switching elements and introducing high impedance between the contacts in response to a low control level and vice versa; a DC power supply for feeding the driver, the positive port of which is connected to the common contact of the first plurality and the negative port of which is connected to the common contact of the second plurality; a plurality of N voltage dividers, each divider consisting of two serially connected resistors connecting between a free contact of a controllable switching element from the first plurality and a free contact of a controllable switching element from the second plurality, where each two controllable switching elements connected by a voltage divider forming a pair; a plurality of N control inputs, each of

Abstract: A driver for performing efficient low-power high-swing modulation, which comprises a first plurality of N controllable switching elements and introducing low impedance between the contacts in response to a low control level and vice versa; a second plurality of N controllable switching elements and introducing high impedance between the contacts in response to a low control level and vice versa; a DC power supply for feeding the driver, the positive port of which is connected to the common contact of the first plurality and the negative port of which is connected to the common contact of the second plurality; a plurality of N voltage dividers, each divider consisting of two serially connected resistors connecting between a free contact of a controllable switching element from the first plurality and a free contact of a controllable switching element from the second plurality, where each two controllable switching elements connected by a voltage divider forming a pair; a plurality of N control inputs, each of

Abstract: A lateral bipolar transistor is used to protect a passive radio frequency (RF) microelectronic circuit during electrostatic discharge (ESD) events. The microelectronic circuit receives a high frequency differential input signal across first and second pads. The lateral bipolar transistor includes an n-type emitter coupled to the first pad and an n-type collector coupled to the second pad. The emitter and collector are located in a p-well, which forms the base of the transistor. The p-well is located in an isolating n-well, which in turn, is located in a p-type substrate. The n-well is coupled to receive the VDD supply voltage and the p-substrate is coupled to a VSS reference voltage. A dielectric region can be located between the emitter and collector (in the p-well).

Abstract: A lateral bipolar transistor is used to protect a passive radio frequency (RF) microelectronic circuit during electrostatic discharge (ESD) events. The microelectronic circuit receives a high frequency differential input signal across first and second pads. The lateral bipolar transistor includes an n-type emitter coupled to the first pad and an n-type collector coupled to the second pad. The emitter and collector are located in a p-well, which forms the base of the transistor. The p-well is located in an isolating n-well, which in turn, is located in a p-type substrate. The n-well is coupled to receive the VDD supply voltage and the p-substrate is coupled to a VSS reference voltage. A dielectric region can be located between the emitter and collector (in the p-well).

Abstract: A protection system for an integrated circuit includes a protection structure for the input terminals and output terminals that protects against ESD stress in bonding pad to V.sub.SS and bonding pad to V.sub.DD paths, both negative and positive paths. The protection system also includes a protection structure for protecting bonding pad to bonding pad electrical paths and a protection structure for V.sub.DD to V.sub.SS paths. Using all three protection structures in combination provides full protection against ESD events in all possible paths in an integrated circuit. A protection structure isolates an output buffer from the protection structure and encourages stress discharge through the protection structure rather than the output buffer.