Patents by Inventor Yaron Hasson
Yaron Hasson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9312820Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.Type: GrantFiled: September 23, 2013Date of Patent: April 12, 2016Assignee: DSP GROUP LTD.Inventors: Alexander Mostov, Yaron Hasson, Ron Pongratz, Sharon Betzalel
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Patent number: 9294050Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.Type: GrantFiled: September 23, 2013Date of Patent: March 22, 2016Assignee: DSP Group Ltd.Inventors: Alexander Mostov, Yaron Hasson
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Patent number: 9136838Abstract: A dual pole dual through switch for switching between at least four states. The switch comprises four transistors such as N-channel Metal Oxide Semiconductor transistors, such that at each state at most one transistor is in “on” state, and the others are in “off” state. Each transistor has its own control circuit, which provides zero or negative voltage to the drain of the transistor, positive voltage to the source of the transistor, and control alternating voltage to the gate of the transistor. The switch can be used on-chip for devices. Such devices may include a base station or a handset of a cordless phone.Type: GrantFiled: September 21, 2010Date of Patent: September 15, 2015Assignee: DSP GROUP LTD.Inventors: Yaron Hasson, Alex Mostov
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Publication number: 20140087672Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.Type: ApplicationFiled: September 23, 2013Publication date: March 27, 2014Applicant: DSP Group, Ltd.Inventors: Alexander Mostov, Yaron Hasson
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Publication number: 20140087673Abstract: A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.Type: ApplicationFiled: September 23, 2013Publication date: March 27, 2014Applicant: DSP Group, Ltd.Inventors: Alexander Mostov, Yaron Hasson, Ron Pongratz
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Publication number: 20130252562Abstract: A novel and useful RF switch that comprises four transistors configured to have four operating states, wherein at any time at most one transistor is in ‘on’ state. The switch is an on-chip switch and is constructed in using CMOS processes and technology. The switch is optionally a double pole, double throw (DPDT) switch. The switch can be used in numerous mobile devices such as a cellular phone or in the handset or base station of a cordless phone. The switch optionally selects between two antennas and between transmitter and receiver circuits. Within the switch, at least one of the at least four transistors is optionally an N-channel Metal Oxide Semiconductor (NMOS) transistor. The switch can further comprise one or more logic control circuits providing biasing voltages to one or more of the transistors. Within the switch, the control circuit comprises logic components for providing appropriate biasing voltages to the drain, source and gate terminals of the transistors in the switch.Type: ApplicationFiled: March 15, 2013Publication date: September 26, 2013Applicant: DSP Group, Ltd.Inventors: Yaron Hasson, Alex Mostov
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Publication number: 20130244595Abstract: A dual pole dual through switch for switching between at least four states. The switch comprises four transistors such as N-channel Metal Oxide Semiconductor transistors, such that at each state at most one transistor is in “on” state, and the others are in “off” state. Each transistor has its own control circuit, which provides zero or negative voltage to the drain of the transistor, positive voltage to the source of the transistor, and control alternating voltage to the gate of the transistor. The switch can be used on-chip for devices. Such devices may include a base station or a handset of a cordless phone.Type: ApplicationFiled: September 21, 2010Publication date: September 19, 2013Applicant: DSP GROUP LTDInventors: Yaron Hasson, Alex Mostov