Patents by Inventor Yaroslav Maksymiv

Yaroslav Maksymiv has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MEMS 2D and 3D magnetic field sensors and associated manufacturing method
    Patent number: 8159219
    Abstract: The disclosure provides Hall effect device configurations capable of measuring magnetic fields in two dimensions (2D) and three dimensions (3D) along with associated microelectromechanical system (MEMS) manufacturing methods. The present invention includes various geometric layout configurations for 2D and 3D Hall effect devices with multidimensional magnetic field sensing elements. Advantageously, the present invention can provide, simultaneously and independently, absolute measurement of each of the components (i.e., x-, y-, and z-components) of a magnetic field. Additionally, the geometric layout configurations enable the Hall effect devices to be constructed with MEMS fabrication techniques.
    Type: Grant
    Filed: October 20, 2008
    Date of Patent: April 17, 2012
    Assignee: University of North Carolina at Charlotte
    Inventors: Horacio V. Estrada, Yaroslav Maksymiv
  • MEMS 2D AND 3D MAGNETIC FIELD SENSORS AND ASSOCIATED MANUFACTURING METHOD
    Publication number: 20100097059
    Abstract: The disclosure provides Hall effect device configurations capable of measuring magnetic fields in two dimensions (2D) and three dimensions (3D) along with associated microelectromechanical system (MEMS) manufacturing methods. The present invention includes various geometric layout configurations for 2D and 3D Hall effect devices with multidimensional magnetic field sensing elements. Advantageously, the present invention can provide, simultaneously and independently, absolute measurement of each of the components (i.e., x-, y-, and z-components) of a magnetic field. Additionally, the geometric layout configurations enable the Hall effect devices to be constructed with MEMS fabrication techniques.
    Type: Application
    Filed: October 20, 2008
    Publication date: April 22, 2010
    Inventors: Horacio V. ESTRADA, Yaroslav Maksymiv