Patents by Inventor Yarui ZHENG

Yarui ZHENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220231215
    Abstract: A superconducting quantum hybrid system includes: a silicon carbide (SiC) epitaxial layer; and a superconducting qubit line, the superconducting qubit line corresponding to a superconducting qubit, where a designated region of the SiC epitaxial layer includes a nitrogen vacancy (NV) center, the NV center being formed by implanting nitrogen ions into the designated region of the SiC epitaxial layer, and where the superconducting qubit line is located on a surface of the SiC epitaxial layer, the superconducting qubit is coupled to a solid-state defect qubit, and the solid-state defect qubit is a qubit corresponding to the NV center in the designated region.
    Type: Application
    Filed: February 3, 2022
    Publication date: July 21, 2022
    Inventors: Yu ZHOU, Zhenxing ZHANG, Sainan HUAI, Yarui ZHENG, Shengyu ZHANG
  • Publication number: 20220216134
    Abstract: A manufacturing method for an air bridge structure includes forming a first photoresist structure on a substrate. The first photoresist structure includes a first opening that reveals the substrate. The manufacturing method further includes forming a bridge supporting structure on the substrate by depositing an inorganic bridge supporting material on the substrate based on the first opening in the first photoresist structure, and stripping the first photoresist structure after the deposition. Then, the manufacturing method includes forming a second photoresist structure on the substrate. The second photoresist structure includes at least a second opening that reveals at least a portion of the bridge supporting structure on the substrate. Then, the method include forming the air bridge structure by depositing an air bridge material on the substrate based on the second opening and stripping the second photoresist structure after the deposition. Further, the bridge supporting structure can be removed.
    Type: Application
    Filed: March 24, 2022
    Publication date: July 7, 2022
    Applicant: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED
    Inventors: Wenlong ZHANG, Chuhong YANG, Sainan HUAI, Yarui ZHENG, Sheng Yu ZHANG, Jiagui FENG, Kanglin XIONG, Biao WU, Yongdan HUANG, Xiao CHEN, Sunan DING
  • Publication number: 20220216390
    Abstract: This disclosure includes a method for fabricating an air bridge, an air bridge structure, and a superconducting quantum chip, and relates to the field of circuit structures. In some examples, a method for fabricating an air bridge includes forming an air bridge brace structure on a substrate, and forming, on the air bridge brace structure and the substrate, an air bridge material layer with one or more openings in the air bridge material layer that reveal the air bridge brace structure. The air bridge material layer with the one or more openings is formed based on a patterned photoresist layer with patterns corresponding to the one or more openings. The method further includes removing, based on the one or more openings in the air bridge material layer, the air bridge brace structure to obtain the air bridge having the one or more openings.
    Type: Application
    Filed: March 25, 2022
    Publication date: July 7, 2022
    Applicants: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED, SUZHOU INSTITUTE OF NANO-TECH & NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES
    Inventors: Wenlong ZHANG, Sainan HUAI, Yarui ZHENG, Jiagui FENG, Kanglin XIONG, Sunan DING
  • Publication number: 20220147859
    Abstract: A method for processing a frequency control signal includes providing a square wave pulse to a target qubit, and controlling, after a first time elapses from an end time of the square wave pulse, the target qubit to rotate around a Y axis by a first target distance. The first time has a value that is variable. The method includes performing, after a second time elapses from the first time, a QST measurement on the target qubit and reconstructing a density matrix of the target qubit based on the QST measurement to obtain a phase parameter value of the target qubit associated with the value of the first time. Further, the method includes varying the first time and repeating the QST measurement in response to values of the first time to obtain phase parameter values associated with the values of the first time; and adjusting the frequency control signal accordingly.
    Type: Application
    Filed: January 26, 2022
    Publication date: May 12, 2022
    Applicant: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED
    Inventors: Zhenxing ZHANG, Yu ZHOU, Yarui ZHENG, Shengyu ZHANG
  • Publication number: 20220130784
    Abstract: This disclosure discloses a method for preparing an indium pillar, a chip substrate and a chip. The method includes: applying a first photoresist layer on a substrate; applying a second photoresist layer on the first photoresist layer; covering a part of a surface of the second photoresist layer; underexposing the part of the second photoresist layer to obtain a processed second photoresist layer; developing and fixing the processed second photoresist layer to form an undercut structure; etching the first photoresist layer through the undercut structure to form an expose area; and depositing an indium material on the exposed area to form an indium pillar solder.
    Type: Application
    Filed: January 10, 2022
    Publication date: April 28, 2022
    Applicant: Tencent Technology (Shenzhen) Company Limited
    Inventors: Wenlong ZHANG, Chuhong YANG, Yarui ZHENG, Shengyu ZHANG
  • Publication number: 20220092462
    Abstract: This application discloses methods and devices for a quantum chip, a quantum processor and a quantum computer, and relates to the field of quantum technology. The quantum chip includes a bottom sheet and a top sheet; a qubit array disposed on the top sheet, the qubit array comprising a plurality of qubits distributed in an array structure of M rows by N columns, and M and N being both integers greater than 1; a reading cavity disposed on the bottom sheet, and the reading cavity being configured to acquire status information of a qubit in the qubit array; and the bottom sheet and the top sheet being electrically connected.
    Type: Application
    Filed: December 2, 2021
    Publication date: March 24, 2022
    Applicant: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED
    Inventors: Sainan HUAI, Yu ZHOU, Zhenxing ZHANG, Yarui ZHENG, Wenlong ZHANG, Chuhong YANG, Maochun DAI, Yicong ZHENG, Shengyu ZHANG
  • Publication number: 20220037148
    Abstract: Embodiments of this disclosure provide a photoresist structure, a patterned deposition layer, a semiconductor chip and a manufacturing method thereof According to the method for manufacturing a photoresist structure, a single photoresist is used, a second photoresist layer having an undercut can be obtained by only one development process using a single developing solution, and the size of the undercut can be controlled by the development time, thereby solving the problems such as difficulty in lift-off caused by adhesion of the deposited material to the sidewall of the photoresist structure in traditional lift-off processes.
    Type: Application
    Filed: October 15, 2021
    Publication date: February 3, 2022
    Applicant: Tencent Technology (Shenzhen) Company Limited
    Inventors: Wenlong ZHANG, Yarui ZHENG, Shengyu ZHANG