Patents by Inventor Yasaburo Kato

Yasaburo Kato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4951104
    Abstract: A method for fabricating a solid-state image pick-up device changes part of the constituent elemental Si into the n-type impurity phosphorus P, thus changing the substrate to an n-type, by atomic transmutation through neutron irradiation of a p-type silicon Si wafer, and thus produces a Si substrate with a resistivity .rho..sub.s of 10 to 100 ohm-cm. or preferably 40 to 60 ohm-cm. A solid-state image pick-up device with a plurality of photosensors and vertical and horizontal shift registers as set forth above is then fabricated using the resulting Si substrate. In the preferred process, the silicon substrate can be obtained by irradiating a wafer sectioned from a crystal grown by the MCZ method, for instance, with neutrons as described before until it has the required resistivity .rho..sub.s. This silicon substrate is preferably of a p-type before neutron irradiation, that is, in the crystal growth state, and its resistivity .rho..sub.o is then ten or more times higher (100 ohm-cm. or more) than that .rho..
    Type: Grant
    Filed: January 11, 1989
    Date of Patent: August 21, 1990
    Assignee: Sony Corporation
    Inventors: Yasaburo Kato, Toshihiko Suzuki, Nobuyuki Isawa, Hideo Kanbe, Masaharu Hamasaki
  • Patent number: 4836788
    Abstract: A method for fabricating a solid-state image pick-up device changes part of the constituent elemental Si into the n-type impurity phosphorus P, thus changing the substrate to an n-type, by atomic transmutation through neutron irradiation of a p-type silicon Si wafer, and thus produces a Si substrate with a resistivity .rho..sub.s of 10 to 100 ohm-cm. or preferably 40 to 60 ohm-cm. A solid-state image pick-up device with a plurality of photosensors and vertical and horizontal shift registers as set forth above is then fabricated using the resulting Si substrate. In the preferred process, the silicon substrate can be obtained by irradiating a wafer sectioned from a crystal grown by the MCZ method, for instance, with neutrons as described before until it has the required resistivity .rho..sub.s. This silicon substrate is preferably of a p-type before neutron irradiation, that is, in the crystal growth state, and its resistivity .rho..sub.o is then ten or more times higher (100 ohm-cm. or more) than that .rho..
    Type: Grant
    Filed: November 5, 1986
    Date of Patent: June 6, 1989
    Assignee: Sony Corporation
    Inventors: Yasaburo Kato, Toshihiko Suzuki, Nobuyuki Isawa, Hideo Kanbe, Masaharu Hamasaki