Patents by Inventor Yashaswini Pattar

Yashaswini Pattar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Feedforward temperature control for plasma processing apparatus
    Patent number: 10854425
    Abstract: Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.
    Type: Grant
    Filed: February 2, 2016
    Date of Patent: December 1, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Chetan Mahadeswaraswamy, Walter R Merry, Sergio Fukuda Shoji, Chunlei Zhang, Yashaswini Pattar, Duy D Nguyen, Tina Tsong, Shane C Nevil, Douglas A Buchberger, Jr., Fernando M Silveira, Brad L Mays, Kartik Ramaswamy, Hamid Noorbakhsh
  • FEEDFORWARD TEMPERATURE CONTROL FOR PLASMA PROCESSING APPARATUS
    Publication number: 20160155612
    Abstract: Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.
    Type: Application
    Filed: February 2, 2016
    Publication date: June 2, 2016
    Inventors: Chetan MAHADESWARASWAMY, Walter R. MERRY, Sergio Fukuda SHOJI, Chunlei ZHANG, Yashaswini PATTAR, Duy D. NGUYEN, Tina TSONG, Shane C. NEVIL, Douglas A. BUCHBERGER, JR., Fernando M. SILVEIRA, Brad L. MAYS, Kartik RAMASWAMY, Hamid NOORBAKHSH
  • Synchronized radio frequency pulsing for plasma etching
    Patent number: 8962488
    Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.
    Type: Grant
    Filed: March 25, 2013
    Date of Patent: February 24, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Bryan Liao, Katsumasa Kawasaki, Yashaswini Pattar, Sergio Fukuda Shoji, Duy D. Nguyen, Kartik Ramaswamy, Ankur Agarwal, Phillip Stout, Shahid Rauf
  • Synchronized radio frequency pulsing for plasma etching
    Patent number: 8404598
    Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.
    Type: Grant
    Filed: August 6, 2010
    Date of Patent: March 26, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Bryan Liao, Katsumasa Kawasaki, Yashaswini Pattar, Sergio Fukuda Shoji, Duy D. Nguyen, Kartik Ramaswamy, Ankur Agarwal, Phillip Stout, Shahid Rauf
  • SYNCHRONIZED RADIO FREQUENCY PULSING FOR PLASMA ETCHING
    Publication number: 20110031216
    Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.
    Type: Application
    Filed: August 6, 2010
    Publication date: February 10, 2011
    Applicant: APPLIED MATERIALS, INC.
    Inventors: BRYAN LIAO, KATSUMASA KAWASAKI, YASHASWINI PATTAR, SERGIO FUKUDA SHOJI, DUY D. NGUYEN, KARTIK RAMASWAMY, ANKUR AGARWAL, PHILLIP STOUT, SHAHID RAUF