Patents by Inventor Yashraj K. Bhatnagar

Yashraj K. Bhatnagar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130139878
    Abstract: Embodiments of the invention provide a method for forming a solar cell including forming a layer comprising alumina on a substrate and forming a transparent conductive layer on the layer comprising alumina. The method may also include forming a transparent conductive seed layer on the layer comprising alumina and forming a transparent conductive bulk layer on the transparent conductive seed layer. Embodiments of the invention also include photovoltaic devices having a substrate, a layer comprising alumina adjacent to the substrate, a zinc oxide-containing transparent conductive seed layer adjacent to the layer comprising alumina, and a zinc oxide-containing transparent conductive bulk layer adjacent the zinc oxide-containing transparent conductive seed layer.
    Type: Application
    Filed: April 7, 2011
    Publication date: June 6, 2013
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Yashraj K. Bhatnagar, Brenden McComb, Xiao Ming, Deepak Jadhav, Anantha K. Subramani, Wei D. Wang, Jianshe Tang
  • Patent number: 7775856
    Abstract: Embodiments of the invention describe a method for reclaiming a substrate by removing surface films with media blasting. A substrate is provided having a surface film. Media blasting is performed on the substrate to remove the surface film from the surface. In one embodiment media blasting removes a film from the substrate top surface. In another embodiment media blasting removes a film from the substrate top surface and side surface.
    Type: Grant
    Filed: September 27, 2007
    Date of Patent: August 17, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Yashraj K. Bhatnagar, Ronald R. Rayandayan, Krishna Vepa
  • Patent number: 7727782
    Abstract: An apparatus and method for inspecting wafers at a reclaim factory is described. Embodiments of the invention describe an apparatus in which a wafer ID and wafer thickness may be simultaneously measured. A wafer is placed onto a sloped surface and positioned by aligning a notch in the wafer with a pin located on the surface, and by propping the wafer against a pair of laterally opposite restraints. In one embodiment, a foot-switch is used to trigger the simultaneous wafer ID and wafer thickness measurements.
    Type: Grant
    Filed: June 25, 2007
    Date of Patent: June 1, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Yashraj K. Bhatnagar, Krishna Vepa
  • Publication number: 20090088049
    Abstract: Embodiments of the invention describe a method for reclaiming a substrate by removing surface films with media blasting. A substrate is provided having a surface film. Media blasting is performed on the substrate to remove the surface film from the surface. In one embodiment media blasting removes a film from the substrate top surface. In another embodiment media blasting removes a film from the substrate top surface and side surface.
    Type: Application
    Filed: September 27, 2007
    Publication date: April 2, 2009
    Inventors: Yashraj K. Bhatnagar, Ronald R. Rayandayan, Krishna Vepa
  • Publication number: 20080318350
    Abstract: An apparatus and method for inspecting wafers at a reclaim factory is described. Embodiments of the invention describe an apparatus in which a wafer ID and wafer thickness may be simultaneously measured. A wafer is placed onto a sloped surface and positioned by aligning a notch in the wafer with a pin located on the surface, and by propping the wafer against a pair of laterally opposite restraints. In one embodiment, a foot-switch is used to trigger the simultaneous wafer ID and wafer thickness measurements.
    Type: Application
    Filed: June 25, 2007
    Publication date: December 25, 2008
    Inventors: Yashraj K. Bhatnagar, Krishna Vepa
  • Patent number: 6029602
    Abstract: An apparatus and methods for a CVD system incorporates a plasma system for efficiently generating a plasma remotely from a substrate processing zone. The remotely generated plasma may be used to clean unwanted deposits from a chamber, or may be used during substrate processing for etching or depositing processes. In a specific embodiment, the present invention provides an easily removable, conveniently handled, and relatively inexpensive microwave plasma source mounted on the lid of a deposition system. The remote microwave plasma source has a plasma reaction volume that is relatively large compared to a plasma applicator tube volume. Locating the gas inlet between the plasma reaction volume and a microwave power coupler improves the conversion efficiency of microwave energy to ionic plasma species.
    Type: Grant
    Filed: April 22, 1997
    Date of Patent: February 29, 2000
    Assignee: Applied Materials, Inc.
    Inventor: Yashraj K. Bhatnagar