Patents by Inventor Yashuhiro Shimamoto

Yashuhiro Shimamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to enhance the initiation of film growth
    Patent number: 7927933
    Abstract: The present invention relates generally to integrated circuit (IC) fabrication processes. The present invention relates more particularly to the treatment of surfaces, such as silicon dioxide or silicon oxynitride layers, for the subsequent deposition of a metal, metal oxide, metal nitride and/or metal carbide layer. The present invention further relates to a high-k gate obtainable by a method of the invention.
    Type: Grant
    Filed: February 16, 2005
    Date of Patent: April 19, 2011
    Assignees: IMEC, ASM International, Renesas Technology Corporation
    Inventors: Jan Willem Maes, Annelies Delabie, Yashuhiro Shimamoto
  • Method to enhance the initiation of film growth
    Publication number: 20060180879
    Abstract: The present invention relates generally to integrated circuit (IC) fabrication processes. The present invention relates more particularly to the treatment of surfaces, such as silicon dioxide or silicon oxynitride layers, for the subsequent deposition of a metal, metal oxide, metal nitride and/or metal carbide layer. The present invention further relates to a high-k gate obtainable by a method of the invention.
    Type: Application
    Filed: February 16, 2005
    Publication date: August 17, 2006
    Inventors: Jan Maes, Annelies Delabie, Yashuhiro Shimamoto