Abstract: A self-test capable integrated circuit apparatus includes a pattern generator, a results store and testable logic. The testable logic includes a plurality of scan channels, each of the channels being respectively coupled between the pattern generator and the results store. A self-test controller is arranged to supervise a self-test in respect of the testable logic to generate self-test result data, the self-test result data being stored in the results store. A processing resource is coupled to the self-test controller and coupled between the pattern generator and the results store, the processing resource being capable of evaluating the self-test result data stored in the results store. The testable logic includes the processing resource, arranged to cooperate with the self-test controller. The processing resource is able, subsequent to the self-test, to evaluate the self-test result data.

Abstract: A self-test capable integrated circuit apparatus includes a pattern generator, a results store and testable logic. The testable logic includes a plurality of scan channels, each of the channels being respectively coupled between the pattern generator and the results store. A self-test controller is arranged to supervise a self-test in respect of the testable logic to generate self-test result data, the self-test result data being stored in the results store. A processing resource is coupled to the self-test controller and coupled between the pattern generator and the results store, the processing resource being capable of evaluating the self-test result data stored in the results store. The testable logic includes the processing resource, arranged to cooperate with the self-test controller. The processing resource is able, subsequent to the self-test, to evaluate the self-test result data.

Abstract: A method for automatic detection of defects in TSV vias formed in a layer of semiconductor material, this detection taking place before stacking this layer with a plurality of other layers of semiconductor material for the design of a multilayer chip integrated circuit, comprising: measurement on each of said TSV vias of at least one parameter derived from an electrical characteristic of the TSV vias; detection of defects in said TSV vias according to a comparison of the parameters measured with at least one reference parameter, and calculation of said at least one reference parameter using the measured parameters. The parameter measured on each of the TSV vias comprises an oscillation frequency value derived from a capacitive characteristic of the TSV vias.