Abstract: The present disclosure provides methods and systems comprising use of a device.

Abstract: In some examples, a wafer bow measurement system comprises a measurement unit including: a wafer support assembly to impart rotational movement to a measured wafer supported in the measurement unit; an optical sensor; a calibration standard to calibrate the optical sensor; a linear stage actuator to impart linear direction of movement to the optical sensor; a wafer centering sensor to determine a centering of the measured wafer supported in the measurement unit; and a wafer alignment sensor to determine an alignment of the measured wafer supported in the measurement unit.

Abstract: In some examples, a wafer bow measurement system comprises a measurement unit including: a wafer support assembly to impart rotational movement to a measured wafer supported in the measurement unit; an optical sensor; a calibration standard to calibrate the optical sensor; a linear stage actuator to impart linear direction of movement to the optical sensor; a wafer centering sensor to determine a centering of the measured wafer supported in the measurement unit; and a wafer alignment sensor to determine an alignment of the measured wafer supported in the measurement unit.

Abstract: The present disclosure provides methods and systems comprising use of a device.

Abstract: The present disclosure provides methods and systems comprising use of a device.

Abstract: In some examples, a wafer bow measurement system comprises a measurement unit including: a wafer support assembly to impart rotational movement to a measured wafer supported in the measurement unit, an optical sensor, a calibration standard to calibrate the optical sensor; a linear stage actuator to impart linear direction of movement to the optical sensor; a wafer centering sensor to determine a centering of the measured wafer supported in the measurement unit; and a wafer alignment sensor to determine an alignment of the measured wafer supported in the measurement unit.

Abstract: A method for dry processing a substrate in a processing chamber is provided. The substrate is placed in the processing chamber. The substrate is dry processed, wherein the dry processing creates at least one gas byproduct. A concentration of the at least one gas byproduct is measured. The concentration of the at least one gas byproduct is used to determine processing rate of the substrate.

Abstract: A parameter measurement system is provided. A cavity ring down device is provided comprising a first cavity ring down mirror and a second cavity ring down mirror spaced apart from the first cavity ring down mirror. At least one laser light source is optically coupled to the first cavity ring down mirror. A light detector is optically coupled to either the first cavity ring down mirror or the second cavity ring down mirror. A controller is configured to use a sample received from the processing chamber and the light from the at least one laser light source and reflected between the first and second cavity ring down mirrors to measure one or more process parameters and adjust the process based on the one or more process parameters.

Abstract: An apparatus for processing a substrate is provided. A processing chamber is provided. A substrate support is within the processing chamber. A gas inlet provides a process gas into the processing chamber. A gas source provides the process gas to the gas inlet. An exhaust pump pumps gas from the processing chamber. A parameter measurement system comprises a cavity ring down device in fluid communication with the processing chamber, comprising a first cavity ring down mirror on a first side of the cavity ring down device and a second cavity ring down mirror on a second side of the cavity ring down device spaced apart from the first cavity ring down mirror. At least one laser light source is optically coupled to the first cavity ring down mirror. A light detector is optically coupled to either the first cavity ring down mirror or the second cavity ring down mirror.

Abstract: A substrate processing system includes model generation and setpoint modules. The model generation module receives a first time trace based on an output of an endpoint sensor and obtains a target setpoint. A portion of the first time trace is indicative of an endpoint at which a feature has been created in a first substrate. The target setpoint is generated based on a metrology process and is used to compensate for erosion of a first edge ring. The model generation module generates a conversion model based on the portion and the target setpoint. The setpoint module: based on the output, receives a second time trace that is generated subsequent to generation of the first time trace; and based on the conversion model, converts the second time trace to a predicted erosion compensation setpoint, which is set while processing a second substrate using the first or a second edge ring.

Abstract: A method for processing a substrate in a processing chamber using at least one time trace based prediction model is provided. A substrate is dry processed, where the dry processing creates at least one gas by-product. A concentration of the at least one gas by-product is measured. A time trace of the concentration of the at least one gas by-product is determined. The determined time trace of the concentration is provided as input for the at least one time trace based prediction model to obtain at least one process output. The at least one process output is used to adjust at least one process parameter.

Abstract: A substrate processing system includes model generation and setpoint modules. The model generation module receives a first time trace based on an output of an endpoint sensor and obtains a target setpoint. A portion of the first time trace is indicative of an endpoint at which a feature has been created in a first substrate. The target setpoint is generated based on a metrology process and is used to compensate for erosion of a first edge ring. The model generation module generates a conversion model based on the portion and the target setpoint. The setpoint module: based on the output, receives a second time trace that is generated subsequent to generation of the first time trace; and based on the conversion model, converts the second time trace to a predicted erosion compensation setpoint, which is set while processing a second substrate using the first or a second edge ring.

Abstract: A substrate etching system includes an etching control module, a filtering module, and an endpoint module. The etching control module selectively begins plasma etching of a substrate within an etching chamber. The filtering module, during the plasma etching of the substrate: receives a signal including endpoint information; decomposes the signal using empirical mode decomposition (EMD); and generates a filtered signal based on results of the EMD. The endpoint module indicates when an endpoint of the plasma etching of the substrate has been reached based on the filtered signal. The etching control module ends the plasma etching of the substrate in response to the indication that the endpoint of the plasma etching of the substrate has been reached.

Abstract: An apparatus for processing a substrate is provided. A processing chamber is provided. A substrate support is within the processing chamber. A gas inlet provides a process gas into the processing chamber. A gas source provides the process gas to the gas inlet. An exhaust pump pumps gas from the processing chamber. A parameter measurement system comprises a cavity ring down device in fluid communication with the processing chamber, comprising a first cavity ring down mirror on a first side of the cavity ring down device and a second cavity ring down mirror on a second side of the cavity ring down device spaced apart from the first cavity ring down mirror. At least one laser light source is optically coupled to the first cavity ring down mirror. A light detector is optically coupled to either the first cavity ring down mirror or the second cavity ring down mirror.

Abstract: A gas exhaust by-product measurement system is provided. A gas chamber is configured to receive exhaust from the exhaust output. A light source, light detector, and at least one optical element are positioned so that a light beam from the light source is directed to the at least one optical element a plurality of times before reaching the light detector. At least one heater provides heat to the at least one optical element. A plurality of purge gas nozzles are in fluid connection with the optical cavity. A high flow line is in fluid connection between a purge gas source and the plurality of purge gas nozzles. A low flow line is in fluid connection between the purge gas source and the plurality of purge gas nozzles. At least one flow controller manages a plurality of flow rates including a high flow and a low flow.

Abstract: A method for processing a substrate in a processing chamber using at least one time trace based prediction model is provided. A substrate is dry processed, where the dry processing creates at least one gas by-product. A concentration of the at least one gas by-product is measured. A time trace of the concentration of the at least one gas by-product is determined. The determined time trace of the concentration is provided as input for the at least one time trace based prediction model to obtain at least one process output. The at least one process output is used to adjust at least one process parameter.

Abstract: A system and method of identifying a selected process point in a multi-mode pulsing process includes applying a multi-mode pulsing process to a selected wafer in a plasma process chamber, the multi-mode pulsing process including multiple cycles, each one of the cycles including at least one of multiple, different phases. At least one process output variable is collected for a selected at least one of the phases, during multiple cycles for the selected wafer. An envelope and/or a template of the collected at least one process output variable can be used to identify the selected process point. A first trajectory for the collected process output variable of a previous phase can be compared to a second trajectory of the process output variable of the selected phase. A multivariate analysis statistic of the second trajectory can be calculated and used to identify the selected process point.

Abstract: A gas exhaust by-product measurement system is provided. A gas chamber is configured to receive exhaust from the exhaust output. A light source, light detector, and at least one optical element are positioned so that a light beam from the light source is directed to the at least one optical element a plurality of times before reaching the light detector. At least one heater provides heat to the at least one optical element. A plurality of purge gas nozzles are in fluid connection with the optical cavity. A high flow line is in fluid connection between a purge gas source and the plurality of purge gas nozzles. A low flow line is in fluid connection between the purge gas source and the plurality of purge gas nozzles. At least one flow controller manages a plurality of flow rates including a high flow and a low flow.

Abstract: A substrate processing system includes a processing chamber. A pedestal and a showerhead are arranged in the processing chamber. A surface plasmon resonance (SPR) fiber has a central portion disposed in the processing chamber, and opposing ends disposed outside the processing chamber. A light source provides input light at one end of the SPR fiber, and a detector receives output light from the other end of the SPR fiber. Surface plasmon waves and evanescent waves constitute the output light, which is processed and analyzed to determine a condition of the processing chamber.

Abstract: A method for dry processing a substrate in a processing chamber is provided. The substrate is placed in the processing chamber. The substrate is dry processed, wherein the dry processing creates at least one gas byproduct. A concentration of the at least one gas byproduct is measured. The concentration of the at least one gas byproduct is used to determine processing rate of the substrate.