Patents by Inventor Yasuaki Fukumochi

Yasuaki Fukumochi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating a flash control device which uses cascade-connected thyristor and MOSFET
    Patent number: 5443999
    Abstract: A semiconductor device is formed from a thyristor and a MOSFET cascade-connected in which the thyristor includes a bipolar transistor cascade-connected with the MOSFET, the base (p semiconductor region) of which is adapted to be punched through by the application of a working voltage. Thus, the thyristor can easily be latched and unlatched in response to the turn-on and turn-off of the MOSFET. Thus the semiconductor device can be securely on/off controlled by only the single gate (G) of the MOSFET. By using such semiconductor device as a switching element in a flash control device, a high performance flash control device with high flashing efficiency is provided.
    Type: Grant
    Filed: September 1, 1994
    Date of Patent: August 22, 1995
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Akio Uenishi, Hiroshi Yamaguchi, Yasuaki Fukumochi
  • Flash control device using cascade-connected thyristor and MOSFET
    Patent number: 5379089
    Abstract: The semiconductor device is composed of a thyristor and a MOSFET cascade-connected. The thyristor includes a bipolar transistor cascade-connected with the MOSFET, the base (p.sup.-- semiconductor region) of which is adapted to be punched through by the application of a working voltage. Thus, the thyristor can easily be latched and unlatched in response to the turn-on and turn-off of the MOSFET. Thus the semiconductor device can be securely on/off controlled by only the single gate (G) of the MOSFET. By using such semiconductor device as a switching element in a flash control device, a high performance flash control device with high flashing efficiency is provided.
    Type: Grant
    Filed: July 9, 1992
    Date of Patent: January 3, 1995
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Akio Uenishi, Yasuaki Fukumochi
  • Semiconductor device, fabricating method thereof and flash control device using the semiconductor device
    Patent number: 5151762
    Abstract: The semiconductor device is composed of a thyristor and a MOSFET (801) cascode-connected. The thyristor includes a bipolar transistor (803) cascode-connected with the MOSFET (801), the base (p.sup.-- semiconductor region (704)) of which is adapted to be punched through by the application of a working voltage. Thus, the thyristor can easily be latched and unlatched in response to the turn-on and turn-off of the MOSFET (801). Thus the semiconductor device can be securely on/off controlled only by the single gate (G) of the MOSFET. By using such semiconductor device as a switching element (910) in a flash control device, a high performance flash control device with high flashing efficiency can be implemented.
    Type: Grant
    Filed: March 1, 1991
    Date of Patent: September 29, 1992
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Akio Uenishi, Hiroshi Yamaguchi, Yasuaki Fukumochi