Abstract: In a solid state image device which has at least a horizontal CCD register, the horizontal CCD register is covered with a light shielding film which is formed by a resin material.

Abstract: A solid state image pick-up device has a rigid retainer having a hollow space, a resilient plate member closing the hollow space, a charge coupled device integrated on a semiconductor chip mounted on the resilient plate member, an optical lens focusing an image on a photo-electric converting region of the charge coupled device and an actuator connected between the bottom surface of the retainer and the resilient plate member so as to deform the resilient plate member and the semiconductor chip, thereby adjusting the surface of the semiconductor chip to a focal plane.

Abstract: A semiconductor device is disclosed that has a barrier metal layer between a silicon electrode and a metal electrode. For providing contacts on a charge transfer electrode made up of polysilicon, between the electrode and a shield film, which is a conductive film, without causing changes in channel potential or threshold voltage or influencing the charge transfer rate, a barrier metal layer composed of a metal silicide is provided between the shield film and the charge transfer electrode.

Abstract: A dipping in potential well due to direct contact between transfer electrodes and metal wiring causes a drop in transfer efficiency through a CCD register. In order to eliminate or at least reduce the potential dipping, an N.sup.- -type impurity layer that functions as a CCD channel is formed with N.sup.-- -type impurity regions that have impurity concentration lower than that of the N.sup.- -type impurity layer. The N.sup.- -type impurity regions are located below transfer electrodes in alignment with contact apertures.

Abstract: Shunt wirings (12) in the form of a conductive light intercepting film which covers over vertical CCD registers and also serves to supply power, project into locations between adjacent photoelectric transducers (11) in the vertical direction, and the distance between the projecting portions of adjacent ones of the metal wirings is set to 0.2 .mu.m or less and is limited to a distance with which an electric field between adjacent ones of the metal wirings is 10.sup.7 V/cm or less and the adjacent metal wirings do not suffer from short-circuiting.

Abstract: At first, first transfer electrodes are formed selectively on a semiconductor substrate. Then, the surface of the first transfer electrodes are thermally oxidized at a temperature of 850.degree. to 950.degree. C. to form thermal oxide layers. After depositing a polycrystalline silicon layer over the substrate, rapid annealing is performed the first transfer electrodes, the thermal oxide layers and the polycrystalline silicon layer by a halogen lamp. Thus, after forming the polycrystalline silicon layer to be second transfer electrodes, annealing is performed by heating by lamp. Therefore, the thermal oxide layers can be efficiently heated by the irradiation heat from the polycrystalline silicon layer located upper side thereof and also from the first electrodes located at backside. Accordingly, the tolerance voltage of the thermal oxide layer can be improved and the thickness of the thermal oxide layer can be made thinner.

Abstract: In a solid state image pickup device including a semiconductor substrate, a photo/electro conversion element and a register formed within the semiconductor substrate, and an photoshield layer having a slit-type aperture for limiting light incident to the photo/electro conversion element, an optical element is provided for the slit-type aperture, to thereby pass polarized light having an electric field polarization face polarized in the longitudinal direction of the slit-type aperture.

Abstract: The solid-state image sensor disclosed includes a package accommodating an image sensor element chip, and a plurality of wiring patterns carried by a flexible printed wiring circuit board. Each of the wiring patterns is a continuous seamless pattern and has electrode portions for connection with the element chip and for connection with circuit components, and a wiring portion disposed between those electrode portions. The flexible printed wiring circuit board is capable of being bent, extends through and out from the package, and is unitary with the package. The arrangement enables the compact accommodation of the element chip together with other components and the reduction in the number of steps for the fabrication.

Abstract: A solid state image picking-up device such as a charge coupled device (CCD) includes a channel region and a photo-diode region formed on a semiconductor region apart from each other, a first insulating film formed on the semiconductor region including the channel region and the second semiconductor region to have a concave portion above the photo-diode region, and a charge transfer electrode interposed in said first insulating film and extending over the channel region and a region between the channel region and the photo-diode region. A light shielding film is formed on the first insulating film over the channel region and a second insulating film is formed on the light shielding film and the first insulating film. A protection film composed of BPSG or PSG is formed to fill the concave portion on the second insulating film. A third insulating film is formed on the protection film and a flattening resin film is formed on the third insulating film. The protection film is formed of a BPSG film containing P.sub.

Abstract: An image pick up and displaying system comprises an image pick up device being provided with a signal superimposing unit for superimposing a recognition signal at a predetermined portion on any of synchronous pulse signals, except for any image signals, the recognition signal indicating any kind of the image pick up device; and a display device being connected to the image pick up device and further being provided with a signal detecting and sweeping control section for detecting any recognition signal to control a sweeping speed and a sweeping time of sweeping on a screen of the display device at least in any one of vertical and horizontal directions thereby the image is displayed on an entire of the screen without any distortion thereof.

Abstract: In a solid state image sensor comprising a first impurity layer of a first conductivity type forming a photodiode, the impurity layer is composed of a first impurity region formed of a low concentration at a deep level, and a second impurity region formed of a high concentration at a shallow level. The first impurity region extends under a second impurity layer of a second conductivity type formed for device isolation, and also extends under a gate region of a transistor for transferring an electric charge from the photodiode to a CCD channel.

Abstract: In a color CCD camera, a distance between a micro lens and a photodiode is determined dependent on a color light among red, green and blue. Alternative to this structure, a curvature of a micro lens is determined dependent on a color light among red, green and blue. In accordance with this structure, high sensitivity is obtained with improved color balance.