Abstract: A wire harness includes: an electric wire; a first tape wrapping body in which a first adhesive tape is wrapped around a first electric wire portion of a first wrapping section directed to one side from a base point in an axial direction of the electric wire; and a second tape wrapping body in which a second adhesive tape is wrapped around a second electric wire portion of a second wrapping section directed to another side from the base point in the axial direction of the electric wire.

Abstract: A motor includes a bottomed cylindrical housing incorporating a rotor that rotate integrally with a shaft and a stator, and an end bell having an end plate that closes an opening of the housing and a holder that is provided between the rotor and the end plate in an axial direction and to which an electrical element is attached. The end plate has an air hole penetrating the end plate in the axial direction. The holder includes an attachment portion to which the electrical element is attached, and has an insertion hole through which the shaft is inserted. At least part, of the attachment portion, overlapping the air hole when viewed in the axial direction has a cutout portion.

Abstract: There are provided a reticle, a reticle unit, and an optical apparatus, such as a rifle scope, each having a novel configuration that allows formation of a desired pattern. In a reticle 30A1 on which a pattern that serves as an indicator when an object under observation is visually recognized is formed, the pattern is formed of protruding sections 33a and 33b provided on a pattern formation surface 31a of a plate-shaped optical member 31. The protruding sections 33a and 33b are each formed of a plurality of protruding ridges 133 (structural elements) extending in the lengthwise direction of a line that forms the pattern in parallel to the widthwise direction of the line.

Abstract: The present invention relates to providing a thin film transistor substrate containing a protective film, which can impart high driving stability. The thin film transistor substrate contains a thin film transistor and a protective film containing a cured product of a siloxane composition which covers the thin film transistor, wherein the thin film transistor has a semiconductor layer made of an oxide semiconductor, and wherein the siloxane composition contains polysiloxane, a fluorine-containing compound, and a solvent.

Abstract: There are provided a reticle, a reticle unit, and an optical apparatus, such as a rifle scope, each having a novel configuration that allows formation of a desired pattern. In a reticle 30A1 on which a pattern that serves as an indicator when an object under observation is visually recognized is formed, the pattern is formed of protruding sections 33a and 33b provided on a pattern formation surface 31a of a plate-shaped optical member 31. The protruding sections 33a and 33b are each formed of a plurality of protruding ridges 133 (structural elements) extending in the lengthwise direction of a line that forms the pattern in parallel to the widthwise direction of the line.

Abstract: [Problem] To provide a thin film transistor substrate comprising a protective film, which can impart high driving stability. [Means for Solution] A thin film transistor substrate comprising a thin film transistor and a protective film comprising a cured product of a siloxane composition, covering said thin film transistor, wherein the thin film transistor has a semiconductor layer made of an oxide semiconductor, and wherein the siloxane composition comprises polysiloxane, a fluorine-containing compound, and a solvent.

Abstract: The present invention provides means useful for making devices, materials and the like that are excellent in photocatalytic activity, electric property or the like. Specifically, the present invention provides a fusion protein comprising a polypeptide portion capable of forming a multimer having an internal cavity, and a first peptide portion capable of binding to a first target substance and a second peptide portion capable of binding to a second target substance; a multimer of the fusion protein; a complex comprising the multimer of the fusion protein; and the like.

Abstract: A mobile communication system includes a mobile station connected with a base station by radio when being in a cell formed by the base station, and configured to communicate with a counter side unit through the base station; and a relay station configured to form a limitation area. The relay station receives a downlink signal from the base station and transmits a limitation downlink signal obtained by adding information showing that it is in the limitation area to the downlink signal to the limitation area. When receiving the limitation downlink signal, the mobile station transmits an uplink signal showing a function limited state to the base station in synchronization with a downlink channel received from the base station.

Abstract: A mobile communication system includes: a base station configured to form a cell and transmit a downlink signal which has been spread with a downlink scrambling code, toward the cell; a mobile station connected with the base station by radio when the mobile station is in the cell, and configured to communicate with a counter side station through the base station; and a relay station configured to receive the downlink signal, generate a limitation downlink signal showing a limitation area in which a function of the mobile station is limited, based on the downlink signal, and transmit the limitation downlink signal which has been spread with a specific scrambling code different from the downlink scrambling code, toward the limitation area. The downlink signal contains a base station peripheral cell list showing a scrambling code used in another base station on a periphery of the base station.

Abstract: A functional material having excellent photocatalytic activity, electric characteristics and the like is provided. A porous structure body 10 comprises a first target material 20 and an aggregate body 30 formed by aggregation of the first material. The aggregate body 30 adheres to the first target material and is located so as to surround the first target material. The aggregate body has a plurality of first pores 32 unevenly distributed near the first target material in the aggregate body and a plurality of second pores 34 scattered over the aggregate body.

Abstract: The present invention provides means useful for making devices, materials and the like that are excellent in photocatalytic activity, electric property or the like. Specifically, the present invention provides a fusion protein comprising a polypeptide portion capable of forming a multimer having an internal cavity, and a first peptide portion capable of binding to a first target substance and a second peptide portion capable of binding to a second target substance; a multimer of the fusion protein; a complex comprising the multimer of the fusion protein; and the like.

Abstract: A method for manufacturing a photoelectric conversion device including a forming a semiconductor film by a plasma CVD method. The semiconductor film is an amorphous film of SiGe-based compound or a microcrystalline film of SiGe-based compound. The plasma CVD controls bandgap in thickness direction of the semiconductor film by varying the ON or OFF time of electric power applied to generate a plasma and intermittently supplying the power. The ON time and OFF time of the power fall in a range where the duty ratio ON time/(ON time+OFF time)×100(%) is 10% or more and 50% or less.

Abstract: A stack-type photovoltaic element with improved conversion efficiency having an intermediate layer and a method of manufacturing the same are provided. A stack-type photovoltaic element according to the present invention includes a first photovoltaic element portion (a) and a second photovoltaic element portion from a substrate side, as well as at least one intermediate layer between the first photovoltaic element portion and the second photovoltaic element portion. The intermediate layer is formed from a metal oxide film having an oxygen atom concentration/metal atom concentration ratio not lower than 0.956 and not higher than 0.976.

Abstract: Disclosed is a stacked photovoltaic element, including: a first photovoltaic element portion including at least one photovoltaic element, stacked over a substrate; an intermediate layer made of a metal oxide, stacked over the first photovoltaic element portion; a buffer layer in an amorphous state, stacked over the intermediate layer; and a second photovoltaic element portion including at least one photovoltaic element, stacked over the buffer layer, wherein a conductive layer of the second photovoltaic element portion in contact with the buffer layer is a microcrystalline layer.

Abstract: To provide a stacked photoelectric conversion device capable of inhibiting extreme decrease of the output in the morning and evening. A stacked photoelectric conversion device of the present invention comprises a first photoelectric conversion layer, a second photoelectric conversion layer and a third photoelectric conversion layer stacked in this order from a light entrance side, each photoelectric conversion layer having a p-i-n junction and formed of a silicon based semiconductor, wherein a short-circuit photocurrent of the first photoelectric conversion layer is larger than a short-circuit photocurrent of the second photoelectric conversion layer or a short-circuit photocurrent of the third photoelectric conversion layer under a condition of light source: xenon lamp, irradiance: 100 mW/cm2, AM: 1.5, and temperature: 25° C.

Abstract: A method for forming a semiconductor film suitable for a practical photoelectric conversion device having favorable photoelectric conversion efficiency and adapted to volume production and increased substrate area, and a method for manufacturing a photoelectric conversion device including the semiconductor film are provided. The method for forming a semiconductor film manufactures the semiconductor film including amorphous structure by a plasma CVD method. The semiconductor film is an amorphous film of SiGe-based compound or a microcrystalline film of SiGe-based compound. The plasma CVD method controls bandgap in thickness direction of the semiconductor film by varying the ON or OFF time of electric power applied to generate a plasma and intermittently supplying the power. The ON time and OFF time of the power fall in a range where the duty ratio ON time/(ON time+OFF time)×100(%) is 10% or more and 50% or less.

Abstract: A mobile communication system includes a mobile station connected with a base station by radio when being in a cell formed by the base station, and configured to communicate with a counter side unit through the base station; and a relay station configured to form a limitation area. The relay station receives a downlink signal from the base station and transmits a limitation downlink signal obtained by adding information showing that it is in the limitation area to the downlink signal to the limitation area. When receiving the limitation downlink signal, the mobile station transmits an uplink signal showing a function limited state to the base station in synchronization with a downlink channel received from the base station.

Abstract: A mobile communication system includes: a base station configured to form a cell and transmit a downlink signal which has been spread with a downlink scrambling code, toward the cell; a mobile station connected with the base station by radio when the mobile station is in the cell, and configured to communicate with a counter side station through the base station; and a relay station configured to receive the downlink signal, generate a limitation downlink signal showing a limitation area in which a function of the mobile station is limited, based on the downlink signal, and transmit the limitation downlink signal which has been spread with a specific scrambling code different from the downlink scrambling code, toward the limitation area. The downlink signal contains a base station peripheral cell list showing a scrambling code used in another base station on a periphery of the base station.

Abstract: A photoelectric conversion device includes a p-type layer, an i-type layer and an n-type layer each made of a silicon base semiconductor, stacked in this order, wherein the i-type layer contains n-type impurities in a concentration of 1.0×1016 to 2.0×1017 cm?3.

Abstract: To obtain a mobile communication system that can perform handover without causing instantaneous interruption and packet loss and without lowering the performance of the entire network when a mobile communication system is realized by the IP network. During handover of a MN from a handover source cell to a handover destination cell, the MN obtains a CoA of a link, to which a handover destination BTS is connected, and sends it to a handover source BTS. When the handover source BTS receives the CoA from the MN, it measures a data transfer time to the handover destination BTS and transfers an IP packet destined to the MN to the handover destination BTS, and after the transfer time has passed, the handover source BTS sends it to the MN as radio data. The handover destination BTS sends the transferred data to the MN as radio data. The MN sends a message including the CoA to a CN when the handover completed. When the CN receives the message, it routes and directly sends data to the handover destination BTS.