Abstract: A working vehicle includes a steering device to steer a vehicle body, a working device connected to the vehicle body, an automatic steering controller to perform automatic steering of the steering device based on a difference between a scheduled traveling line and a position of the vehicle body, and a parameter changer to change a control parameter of the automatic steering depending on the working device connected to the vehicle body.

Abstract: A working vehicle includes a steering handle, a vehicle body to travel with either manual steering by the steering handle or automatic steering of the steering handle based on a traveling reference line, an operator provided to the vehicle body, and a controller to terminate the automatic steering when the operator is operated under the automatic steering.

Abstract: A method for producing a nanoheterostructured permanent magnet includes a first step of preparing a raw material solution by dissolving, in a solvent, (1) a block copolymer comprising polymer block components that are immiscible but linked to each other, (2) a first inorganic precursor which is one of a hard magnetic material precursor and a soft magnetic material precursor, and (3) a second inorganic precursor which is the other of the hard magnetic material precursor and the soft magnetic material precursor, and a second step including a phase-separation treatment for forming a nanophase-separated, a conversion treatment for converting the hard magnetic material precursor and the soft magnetic material precursor to a hard magnetic material and a soft magnetic material, respectively, and a removal treatment for removing the block copolymer from the nanophase-separated structure.

Abstract: A method for producing a nanoheterostructured permanent magnet includes a first step of preparing a raw material solution by dissolving, in a solvent, (1) a block copolymer comprising polymer block components that are immiscible but linked to each other, (2) a first inorganic precursor which is one of a hard magnetic material precursor and a soft magnetic material precursor, and (3) a second inorganic precursor which is the other of the hard magnetic material precursor and the soft magnetic material precursor, and a second step including a phase-separation treatment for forming a nanophase-separated, a conversion treatment for converting the hard magnetic material precursor and the soft magnetic material precursor to a hard magnetic material and a soft magnetic material, respectively, and a removal treatment for removing the block copolymer from the nanophase-separated structure.

Abstract: A nanoheterostructured permanent magnet includes a hard magnetic material and a soft magnetic material of which one inorganic component is a matrix, and of which the other inorganic component is three-dimensionally and periodically arranged in the matrix, in a shape selected from the group consisting of a spherical shape, a columnar shape, and a gyroid shape, the nanoheterostructured permanent magnet having a three-dimensional periodic structure whose average value of one unit length of a repeated structure is 1 nm to 100 nm.

Abstract: An electrode material for lithium secondary battery comprises a nanoheterostructure which contains a lithium-ion conductor and an electrode active substance of which one inorganic component is a matrix, and of which the other inorganic component is three-dimensionally and periodically arranged in the matrix, and has a three-dimensional periodic structure whose average value of one unit length of a repeated structure is 1 nm to 100 nm.

Abstract: A nanoheterostructured permanent magnet includes a hard magnetic material and a soft magnetic material of which one inorganic component is a matrix, and of which the other inorganic component is three-dimensionally and periodically arranged in the matrix, in a shape selected from the group consisting of a spherical shape, a columnar shape, and a gyroid shape, the nanoheterostructured permanent magnet having a three-dimensional periodic structure whose average value of one unit length of a repeated structure is 1 nm to 100 nm.

Abstract: An electrode material for lithium secondary battery comprises a nanoheterostructure which contains a lithium-ion conductor and an electrode active substance of which one inorganic component is a matrix, and of which the other inorganic component is three-dimensionally and periodically arranged in the matrix, and has a three-dimensional periodic structure whose average value of one unit length of a repeated structure is 1 nm to 100 nm.

Abstract: An optical sensing device includes a silicon-on-insulator (SOI) substrate a semiconductor support substrate, an insulating layer located on the semiconductor support substrate, and a semiconductor layer located on the insulating layer. The optical sensing device further includes a visible light sensor located in the semiconductor support substrate, and an ultraviolet ray sensor located in the semiconductor layer.

Abstract: There is provided a process for producing an energy gas at a lower temperature and in a larger amount, as well as an energy gas storage material capable of easily taking out the energy gas. A process for producing an energy gas including a MG processing step of co-grinding a mixture of a carbon-, hydrogen-, and oxygen-containing compound, an alkali metal or compound thereof, and an alkaline earth metal or a compound thereof, thereby obtaining a MG processing product and a heating step of heating the MG processing product in an inert atmosphere, as well as an energy storage material obtained by the MG processing described above. The MG processing step preferably including adding a transition metal or a compound thereof to the mixture and co-grinding the mixture.

Abstract: An optical sensing device includes a silicon-on-insulator (SOI) substrate a semiconductor support substrate, an insulating layer located on the semiconductor support substrate, and a semiconductor layer located on the insulating layer. The optical sensing device further includes a visible light sensor located in the semiconductor support substrate, and an ultraviolet ray sensor located in the semiconductor layer.

Abstract: The present invention provides a photosensor formed in a semiconductor substrate having a silicon substrate, an insulating layer formed over the silicon substrate, and a silicon semiconductor layer formed over the insulating layer, comprising an ultraviolet photosensitive element formed in the silicon semiconductor layer, and at least one visible light photosensitive element formed in the silicon substrate.

Abstract: The present invention involves a carbon-based hydrogen storage material which includes a carbon material, exhibiting a specific surface area, being 1,000 m2/g or more, and a bulk density, being from 0.4 g/cm3 or more to 1 g/cm3 or less. The carbon-based hydrogen storage material is such that the hydrogen storage capacity per unit volume is large. The invention also provides for a hydrogen storage apparatus whose hydrogen storage capacity per unit volume is large. The hydrogen storage apparatus is constituted so as to include a container and a hydrogen absorbing material accommodated in the container, and the hydrogen absorbing material is arranged to include a porous carbon material whose specific surface area is 1,000 m2/g or more, and a hydrogen absorbing alloy.

Abstract: A shielding layer 23 is selectively formed on a single crystal silicon layer, an active area 25 is formed in the single crystal silicon layer by using the shielding layer 23 as a mask and an impurity layer 26 is formed at the edges at the sides of the active area 25 by using the shielding layer 23 as a mask and implanting an impurity diagonally from above. As a result, since an impurity layer can be formed by implanting ions of the impurity at the edges at the sides of the active area even when the size of the active area is reduced to the absolute limit, the occurrence of the parasitic transistor phenomenon or the edge transistor phenomenon along the edges at the sides of the active area can be prevented.

Abstract: Two types of less expensive and lightweight hydrogen storage materials are provided. One of them is a carbon material for absorbing hydrogen, exhibiting a specific surface area being 3,000 m2/g or more, and having pores, a pore mode diameter of the pores, measured by the BJH method, being from 1 nm to 2 nm. The present carbon material for absorbing hydrogen is such that the hydrogen storage capacity at ordinary temperature is large. The other one of the hydrogen storage materials is a carbon-based hydrogen storage material which includes a carbon material, exhibiting a specific surface area, being 1,000 m2/g or more, and a bulk density, being from 0.4 g/cm3 or more to 1 g/cm3 or less. The present carbon-based hydrogen storage material is such that the hydrogen storage capacity per unit volume, is large. Moreover, to provide a hydrogen storage apparatus whose hydrogen storage capacity per unit volume is large.

Abstract: A method of minimizing the size of primary Si in Al—Si alloy which includes a step of adding P to molten Al—Si alloy, a step of contacting a metal substrate plated with Zn or a copper substrate, and a step of removing the substrate from the molten Al—Si alloy.

Abstract: A method of minimizing the size of primary Si in Al—Si alloy which comprises of a step of adding P to molten Al—Si alloy, a step of contacting a metal substrate plated with Zn or a copper substrate, and a step of removing the substrate from the molten Al—Si alloy.

Abstract: A shielding layer 23 is selectively formed on a single crystal silicon layer, an active area 25 is formed in the single crystal silicon layer by using the shielding layer 23 as a mask and an impurity layer 26 is formed at the edges at the sides of the active area 25 by using the shielding layer 23 as a mask and implanting an impurity diagonally from above. As a result, since an impurity layer can be formed by implanting ions of the impurity at the edges at the sides of the active area even when the size of the active area is reduced to the absolute limit, the occurrence of the parasitic transistor phenomenon or the edge transistor phenomenon along the edges at the sides of the active area can be prevented.

Abstract: The present invention provides a method of generating hydrogen by hydrolyzing a complex metal hydride in the presence of water and a catalyst, wherein the catalyst includes a noble metal and one of metal oxides, metalloid oxides and carbonaceous materials.

Abstract: An ultrasonic motor which has a viration mode of progressive wave with a large vibrational amplitude of an elastic member and which provides a high torque, comprises: at least one vibrator including a disk-shaped elastic member having a driving force transmitting portion, disk-shaped piezoelectric ceramics attached to both surfaces of the elastic member and a plurality of projections provided on both sides of the driving force transmitting portion; and at least one rotor that is in press contact with the driving force transmitting portion of the vibrator. The thickness of the elastic member at a portion between the piezoelectric ceramics is substantially equal to the thickness thereof at the driving force transmitting portion.