Abstract: The purpose of the present invention is to provide a liquid supply device and biological cleaning device that, by supplying a sterile liquid including low-flow, low-pressure microbubbles, can dramatically increase cleaning effects and clean quickly and neatly without damaging a biological tissue. A liquid supply device 3, having a supply flow path 2 for supplying a liquid containing microbubbles to a cleaning instrument 1 for cleaning an organism and to a cleaning target such as a medical instrument, is characterized by being provided with a tube pump 5 for delivering the liquid to the supply flow path 2 and a microbubble generator B that is provided midway on the supply flow path 2 and is for causing microbubbles to be generated in the liquid.

Abstract: Provided is a measuring apparatus that includes: a semiconductor laser device that emits a laser light beam to an object to be measured; a driving unit that provides a driving signal for modulation drive of the semiconductor laser device; a first detection unit that detects a first electrical signal that corresponds to the intensity of the laser light beam modulated due to the self-coupling effect, in a first half-cycle of the driving signal; a second detection unit that detects a second electrical signal that corresponds to the intensity of a second laser light beam modulated due to the self-coupling effect, in a second half-cycle of the driving signal being in an opposite phase of the first half-cycle; a calculation unit that calculates a difference between the first and second electrical signals; and a measuring unit that measures a change in the state of the object based on the calculated difference.

Abstract: Provided is a measuring apparatus including: a driving unit that outputs first and second driving signals each having an opposite phase; a first semiconductor laser device, driven by the first driving signal, that emits a first laser beam to an object to be measured; a second semiconductor laser device, disposed near the first device and driven by the second driving signal, that emits a second laser beam to the object; a first detection unit that detects a first electrical signal that corresponds to the intensity of the first laser beam modulated due to the self-coupling effect; a second detection unit that detects a second electrical signal that corresponds to the intensity of the second laser beam modulated due to the self-coupling effect; a calculation unit that calculates differences between the first and second electrical signals; and a measuring unit that measures a state change of the object from the difference.

Abstract: A measuring device includes a VCSEL of a first-order or high-order single mode emitting laser beams, a driving part configured to drive the VCSEL, a detecting part configured to detect an electric signal relating to feedback lights generated when laser beams are projected onto an object, and a calculating part configured to identify a direction of movement of the object on the basis of the electric signal detected by the detecting part.

Abstract: A semiconductor laser apparatus has a Zener diode containing a first semiconductor region of a first conduction type and a second semiconductor region of a second conduction type joined with the first semiconductor region, and a vertical-cavity surface-emitting semiconductor laser diode stacked above the Zener diode and containing at least a first mirror layer of a first conduction type, a second mirror layer of a second conduction type and an active region sandwiched between the first and second mirror layers. The first semiconductor region and the second mirror layer are electrically connected and the second semiconductor region and the first mirror layer are electrically connected.

Abstract: A measuring device includes a VCSEL of a first-order or high-order single mode emitting laser beams, a driving part configured to drive the VCSEL, a detecting part configured to detect an electric signal relating to feedback lights generated when laser beams are projected onto an object, and a calculating part configured to identify a direction of movement of the object on the basis of the electric signal detected by the detecting part.

Abstract: A semiconductor device includes a substrate, a semiconductor layer formed on the substrate, and an optically functional portion formed by using at least a portion of the semiconductor layer. The optically functional portion performs light emission or light reception. The semiconductor device further includes a first driving electrode that is electrically connected to a semiconductor layer on a surface of the optically functional portion, and the first driving electrode drives the optically functional portion. The semiconductor device further includes an encapsulating electrode that is formed on the semiconductor layer to surround periphery of the optically functional portion, and electrically connected to the first driving electrode.

Abstract: There is provided a semiconductor laser apparatus. An electrode of a semiconductor laser diode is bonded via a die attach and the electrode of the semiconductor laser diode includes Au and at least one of materials that compose the die attach except Au, in advance.

Abstract: Provided is a measuring apparatus that includes: a semiconductor laser device that emits a laser light beam to an object to be measured; a driving unit that provides a driving signal for modulation drive of the semiconductor laser device; a first detection unit that detects a first electrical signal that corresponds to the intensity of the laser light beam modulated due to the self-coupling effect, in a first half-cycle of the driving signal; a second detection unit that detects a second electrical signal that corresponds to the intensity of a second laser light beam modulated due to the self-coupling effect, in a second half-cycle of the driving signal being in an opposite phase of the first half-cycle; a calculation unit that calculates a difference between the first and second electrical signals; and a measuring unit that measures a change in the state of the object based on the calculated difference.

Abstract: Provided is a measuring apparatus including: a driving unit that outputs first and second driving signals each having an opposite phase; a first semiconductor laser device, driven by the first driving signal, that emits a first laser beam to an object to be measured; a second semiconductor laser device, disposed near the first device and driven by the second driving signal, that emits a second laser beam to the object; a first detection unit that detects a first electrical signal that corresponds to the intensity of the first laser beam modulated due to the self-coupling effect; a second detection unit that detects a second electrical signal that corresponds to the intensity of the second laser beam modulated due to the self-coupling effect; a calculation unit that calculates differences between the first and second electrical signals; and a measuring unit that measures a state change of the object from the difference.

Abstract: A light-emitting module outputting laser beam emitted from a semiconductor light-emitting element via a lens, the light-emitting module includes a first main plane, a mount portion on the first main plane that mounts the semiconductor light-emitting element, a lens holding portion that holds the lens so that a light axis of the lens corresponds to a reference line crossed at right angles to the first main plane, a semiconductor light-receiving element that receives the laser beam reflected by the lens out of the laser beam emitted from the semiconductor light-emitting element. The semiconductor light-receiving element is positioned on the light axis of the lens and the semiconductor light-emitting element is provided away from the light axis of the lens.

Abstract: A semiconductor laser apparatus includes a substrate, a vertical-cavity surface-emitting semiconductor laser diode (VCSEL) including a first and second mirror layers of a first and second conduction types, respectively, an active region between the first and second mirror layers, a first and second electrode layers electrically connected with the first and second mirror layers, respectively, and at least one Zener diode including a first and second semiconductor regions of a first and second conduction types, respectively, and a third and fourth electrode layers electrically connected with the first and second semiconductor regions, respectively. The second semiconductor region is formed in a portion of the first semiconductor region and forms a PN junction with the first semiconductor region. The VCSEL and the Zener diode are formed on the substrate. The first and second electrode layers are electrically connected with the fourth and third electrode layers, respectively.

Abstract: A semiconductor device includes a substrate, a semiconductor layer formed on the substrate, and an optically functional portion formed by using at least a portion of the semiconductor layer. The optically functional portion performs light emission or light reception. The semiconductor device further includes a first driving electrode that is electrically connected to a semiconductor layer on a surface of the optically functional portion, and the first driving electrode drives the optically functional portion. The semiconductor device further includes an encapsulating electrode that is formed on the semiconductor layer to surround periphery of the optically functional portion, and electrically connected to the first driving electrode.

Abstract: A surface emitting semiconductor laser includes a laminate of semiconductor layers emitting multimode laser light, and a block member blocking light of a specific mode among the multimode laser light emitted from the laminate.

Abstract: A surface emitting semiconductor laser includes a laminate of semiconductor layers emitting multimode laser light, and a block member blocking light of a specific mode among the multimode laser light emitted from the laminate.

Abstract: There is provided a semiconductor laser apparatus. An electrode of a semiconductor laser diode is bonded via a die attach and the electrode of the semiconductor laser diode includes Au and at least one of materials that compose the die attach except Au, in advance.

Abstract: A light-emitting module outputting laser beam emitted from a semiconductor light-emitting element via a lens, the light-emitting module includes a first main plane, a mount portion on the first main plane that mounts the semiconductor light-emitting element, a lens holding portion that holds the lens so that a light axis of the lens corresponds to a reference line crossed at right angles to the first main plane, a semiconductor light-receiving element that receives the laser beam reflected by the lens out of the laser beam emitted from the semiconductor light-emitting element. The semiconductor light-receiving element is positioned on the light axis of the lens and the semiconductor light-emitting element is provided away from the light axis of the lens.

Abstract: A surface emitting semiconductor laser includes a laminate of semiconductor layers emitting multimode laser light, and a block member blocking light of a specific mode among the multimode laser light emitted from the laminate.

Abstract: A semiconductor laser apparatus has a Zener diode containing a first semiconductor region of a first conduction type and a second semiconductor region of a second conduction type joined with the first semiconductor region, and a vertical-cavity surface-emitting semiconductor laser diode stacked above the Zener diode and containing at least a first mirror layer of a first conduction type, a second mirror layer of a second conduction type and an active region sandwiched between the first and second mirror layers. The first semiconductor region and the second mirror layer are electrically connected and the second semiconductor region and the first mirror layer are electrically connected.

Abstract: A semiconductor laser apparatus includes a substrate, a vertical-cavity surface-emitting semiconductor laser diode (VCSEL) including a first and second mirror layers of a first and second conduction types, respectively, an active region between the first and second mirror layers, a first and second electrode layers electrically connected with the first and second mirror layers, respectively, and at least one Zener diode including a first and second semiconductor regions of a first and second conduction types, respectively, and a third and fourth electrode layers electrically connected with the first and second semiconductor regions, respectively. The second semiconductor region is formed in a portion of the first semiconductor region and forms a PN junction with the first semiconductor region. The VCSEL and the Zener diode are formed on the substrate. The first and second electrode layers are electrically connected with the fourth and third electrode layers, respectively.