Abstract: Provided is a semiconductor device including a first MOSFET; a second MOSFET; a first resistor provided between a gate terminal of the first MOSFET and a source terminal of the second MOSFET; a second resistor provided between a source terminal of the first MOSFET and a gate terminal of the second MOSFET; a first diode provided in series with the first resistor between the gate terminal of the first MOSFET and the source terminal of the second MOSFET; and a second diode provided in series with the second resistor between the source terminal of the first MOSFET and the gate terminal of the second MOSFET.

Abstract: Provided is a semiconductor device including a first MOSFET; a second MOSFET; a first resistor provided between a gate terminal of the first MOSFET and a source terminal of the second MOSFET; a second resistor provided between a source terminal of the first MOSFET and a gate terminal of the second MOSFET; a first diode provided in series with the first resistor between the gate terminal of the first MOSFET and the source terminal of the second MOSFET; and a second diode provided in series with the second resistor between the source terminal of the first MOSFET and the gate terminal of the second MOSFET.

Abstract: The present invention provides a carburized part having a total amount of TiC, AlN and ZrC, which are precipitate particles, of 4.5×10?10 mole or less per 1 mm2 of grain boundary area of prior austenite grains after carburization. According to the present invention, it is possible to provide a carburized part which allows effective inhibition of abnormal grain growth in spite of a carburizing treatment and makes it possible to solve the problem of reduction in properties caused by abnormal grain growth.

Abstract: Reverse recovery current flowing through a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) having been turned off can become reverse recovery loss. Reverse recovery loss of the MOSFET is desirably reduced. A semiconductor apparatus including: a MOSFET portion; and a diode portion connected in anti-parallel with the MOSFET portion, wherein reverse recovery current flows through the diode portion after reverse recovery current of the MOSFET portion becomes zero is provided.

Abstract: Provided is a case hardening steel which allows effective inhibition of abnormal grain growth during carburizing treatment or the like and makes it possible to solve the problem of abnormal grain growth-induced reduction in characteristics. In the case hardening steel, a total amount of TiC, ZrC and AlN which are precipitate particles contained in 100 g of a steel material after subjecting the case hardening steel to hot rolling is 3.5×10?4 mole or less.

Abstract: Reverse recovery current flowing through a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) having been turned off can become reverse recovery loss. Reverse recovery loss of the MOSFET is desirably reduced. A semiconductor apparatus including: a MOSFET portion; and a diode portion connected in anti-parallel with the MOSFET portion, wherein reverse recovery current flows through the diode portion after reverse recovery current of the MOSFET portion becomes zero is provided.

Abstract: The present invention provides a carburized part having a total amount of TiC, AlN and ZrC, which are precipitate particles, of 4.5×10?10 mole or less per 1 mm2 of grain boundary area of prior austenite grains after carburization. According to the present invention, it is possible to provide a carburized part which allows effective inhibition of abnormal grain growth in spite of a carburizing treatment and makes it possible to solve the problem of reduction in properties caused by abnormal grain growth.

Abstract: Provided is a case hardening steel which allows effective inhibition of abnormal grain growth during carburizing treatment or the like and makes it possible to solve the problem of abnormal grain growth-induced reduction in characteristics. In the case hardening steel, a total amount of TiC, ZrC and AlN which are precipitate particles contained in 100 g of a steel material after subjecting the case hardening steel to hot rolling is 3.5×10?4 mole or less.