Patents by Inventor Yasuaki Terao
Yasuaki Terao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10468535Abstract: Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W.Type: GrantFiled: April 7, 2011Date of Patent: November 5, 2019Assignee: Kobe Steel, Ltd.Inventors: Shinya Morita, Toshihiro Kugimiya, Takeaki Maeda, Satoshi Yasuno, Yasuaki Terao, Aya Miki
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Patent number: 9305470Abstract: The present invention provides a display device which is provided with a Cu alloy film having high adhesion to an oxygen-containing insulator layer and a low electrical resistivity. The present invention relates to a Cu alloy film for a display device, said film having a stacked structure including a first layer (Y) composed of a Cu alloy containing, in total, 1.2-20 atm % of at least one element selected from among a group composed of Zn, Ni, Ti, Al, Mg, Ca, W, Nb and Mn, and a second layer (X) composed of pure Cu or a Cu alloy having Cu as a main component and an electrical resistivity lower than that of the first layer (Y). A part of or the whole first layer (Y) is directly in contact with an oxygen-containing insulator layer (27), and in the case where the first layer (Y) contains Zn or Ni, the thickness of the first layer (Y) is 10-100 nm, and in the case where the first layer (Y) does not contain Zn and Ni, the thickness of the first layer (Y) is 12-100 nm.Type: GrantFiled: July 21, 2011Date of Patent: April 5, 2016Assignee: Kobe Steel, Ltd.Inventors: Aya Miki, Toshihiro Kugimiya, Yasuaki Terao
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Patent number: 8907334Abstract: Disclosed is an oxide for a semiconductor layer of a thin-film transistor, said oxide being excellent in the switching characteristics of a thin-film transistor, specifically enabling favorable characteristics to be stably obtained even in a region of which the ZnO concentration is high and even after forming a passivation layer and after applying stress. The oxide is used in a semiconductor layer of a thin-film transistor, and the aforementioned oxide contains Zn and Sn, and further contains at least one element selected from group X consisting of Al, Hf, Ta, Ti, Nb, Mg, Ga, and the rare-earth elements.Type: GrantFiled: April 18, 2011Date of Patent: December 9, 2014Assignees: Kobe Steel, Ltd., Samsung Display Co., Ltd.Inventors: Aya Miki, Yumi Iwanari, Toshihiro Kugimiya, Shinya Morita, Yasuaki Terao, Satoshi Yasuno, Jae Woo Park, Je Hun Lee, Byung Du Ahn
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Patent number: 8598580Abstract: Disclosed is a wiring structure that attains excellent low-contact resistance even if eliminating a barrier metal layer that normally is disposed between a Cu alloy wiring film and a semiconductor layer, and wiring structure with excellent adhesion. The wiring structure is provided with a semiconductor layer, and a Cu alloy layer, on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer, and the Cu alloy layer. The laminated structure is composed of a (N, C, F, O) layer which contains at least one element selected from among a group composed of nitrogen, carbon, fluorine, and oxygen, and a Cu—Si diffusion layer which includes Cu and Si, in this order from the substrate side. At least one element selected from among the group composed of nitrogen, carbon, fluorine, and oxygen that composes the (N, C, F, O) layer is bonded to Si in the semiconductor layer.Type: GrantFiled: March 30, 2011Date of Patent: December 3, 2013Assignee: Kobe Steel, Ltd.Inventors: Yasuaki Terao, Shinya Morita, Aya Miki, Katsufumi Tomihisa, Hiroshi Goto
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Publication number: 20130122323Abstract: The present invention provides a display device which is provided with a Cu alloy film having high adhesion to an oxygen-containing insulator layer and a low electrical resistivity. The present invention relates to a Cu alloy film for a display device, said film having a stacked structure including a first layer (Y) composed of a Cu alloy containing, in total, 1.2-20 atm % of at least one element selected from among a group composed of Zn, Ni, Ti, Al, Mg, Ca, W, Nb and Mn, and a second layer (X) composed of pure Cu or a Cu alloy having Cu as a main component and an electrical resistivity lower than that of the first layer (Y). A part of or the whole first layer (Y) is directly in contact with an oxygen-containing insulator layer (27), and in the case where the first layer (Y) contains Zn or Ni, the thickness of the first layer (Y) is 10-100 nm, and in the case where the first layer (Y) does not contain Zn and Ni, the thickness of the first layer (Y) is 5-100 nm.Type: ApplicationFiled: July 21, 2011Publication date: May 16, 2013Applicant: Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel Ltd)Inventors: Aya Miki, Toshihiro Kugimiya, Yasuaki Terao
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Publication number: 20130032798Abstract: Disclosed is an oxide for a semiconductor layer of a thin-film transistor, said oxide being excellent in the switching characteristics of a thin-film transistor, specifically enabling favorable characteristics to be stably obtained even in a region of which the ZnO concentration is high and even after forming a passivation layer and after applying stress. The oxide is used in a semiconductor layer of a thin-film transistor, and the aforementioned oxide contains Zn and Sn, and further contains at least one element selected from group X consisting of Al, Hf, Ta, Ti, Nb, Mg, Ga, and the rare-earth elements.Type: ApplicationFiled: April 18, 2011Publication date: February 7, 2013Applicants: SAMSUNG DISPLAY CO., LTD., KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)Inventors: Aya Miki, Yumi Iwanari, Toshihiro Kugimiya, Shinya Morita, Yasuaki Terao, Satoshi Yasuno, Jae Woo Park, Je Hun Lee, Byung Du Ahn
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Publication number: 20130026470Abstract: Disclosed is a wiring structure that attains excellent low-contact resistance even if eliminating a barrier metal layer that normally is disposed between a Cu alloy wiring film and a semiconductor layer, and wiring structure with excellent adhesion. The wiring structure is provided with a semiconductor layer, and a Cu alloy layer, on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer, and the Cu alloy layer. The laminated structure is composed of a (N, C, F, O) layer which contains at least one element selected from among a group composed of nitrogen, carbon, fluorine, and oxygen, and a Cu—Si diffusion layer which includes Cu and Si, in this order from the substrate side. At least one element selected from among the group composed of nitrogen, carbon, fluorine, and oxygen that composes the (N, C, F, O) layer is bonded to Si in the semiconductor layer.Type: ApplicationFiled: March 30, 2011Publication date: January 31, 2013Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)Inventors: Yasuaki Terao, Shinya Morita, Aya Miki, Katsufumi Tomihisa, Hiroshi Goto
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Publication number: 20130009643Abstract: A compact NMR analyzer for clinical examinations which is suitable for use at medical facilities is provided. An NMR analyzer for clinical examinations 1 for analyzing a sample including a liquid component extracted from a human body, includes: a solution feeding pump 6 that feeds a sample; a solution feeding pipe 18 that receives the sample fed from the solution feeding pump 6; a superconducting magnet 7 that encloses the solution feeding pipe 18 around an axis thereof; a helium container 9 that houses the superconducting magnet 7 and liquid helium 8; a vacuum container 12 that has a vacuum chamber and that houses the helium container 9 inside the vacuum chamber; heat shields 10 and 11 that cover the helium container 9 in the vacuum container 12; and a recondensing unit 3 that recondenses helium vaporized inside the helium container 9 and that cools the heat shields 10 and 11.Type: ApplicationFiled: March 25, 2011Publication date: January 10, 2013Inventors: Takashi Miki, Yasuaki Terao
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Publication number: 20130009111Abstract: Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W.Type: ApplicationFiled: April 7, 2011Publication date: January 10, 2013Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)Inventors: Shinya Morita, Toshihiro Kugiyama, Takeaki Maeda, Satoshi Yasuno, Yasuaki Terao, Aya Miki