Abstract: To provide a mask aligner that can appropriately manage very small-quantity production and multiproduct production. The present invention is a mask aligner 1 that exposes a wafer W in a predetermined size through a mask M, and has a configuration that includes: a conveying device 5 for conveying the wafer W and the mask M; an exposure stage 3f on which the wafer W conveyed by the conveying device 5 is installed; a mask holder 3b that is mounted to face the exposure stage 3f and on which the mask M conveyed by the conveying device 5 is installed; and an LED light source 8c mounted to face the exposure stage 3f via the mask holder 3b.

Abstract: To provide a mask aligner that can appropriately manage very small-quantity production and multiproduct production. The present invention is a mask aligner 1 that exposes a wafer W in a predetermined size through a mask M, and has a configuration that includes: a conveying device 5 for conveying the wafer W and the mask M; an exposure stage 3f on which the wafer W conveyed by the conveying device 5 is installed; a mask holder 3b that is mounted to face the exposure stage 3f and on which the mask M conveyed by the conveying device 5 is installed; and an LED light source 8c mounted to face the exposure stage 3f via the mask holder 3b.

Abstract: A composition for forming a silicon.aluminum film, containing a silicon compound and an aluminum compound. The silicon.aluminum film is obtained by forming a coating film of the above composition and treating it with heat and/or light.

Abstract: There is provided a method for forming wiring or an electrode by coating a substrate with a composition comprising (A) a complex of an amine compound and a hydrogenated aluminum compound and (B) a titanium compound or a composition comprising the complex and (C) metal particles and subjecting the obtained coating film to heating and/or a light treatment. By the method, a film can be formed that uses a conductive film forming composition with which wiring and an electrode that can be suitably used for electronic devices can be formed easily and inexpensively.

Abstract: [Problem] To provide an adhesive composition which is used for fixing a semiconductor wafer or the like onto a substrate, exhibits firm adhesion with high heat resistance in the wafer grinding stage and is melted by heating to enable easy peeling after the completion of the wafer grinding stage. [Means to solve problem] The hot-melt adhesive composition of the invention is a composition containing as a main component a crystalline compound having a melting temperature of 50 to 300° C., and has a melting temperature width of not more than 30° C. and a melt viscosity of not more than 0.1 Pa·s. The crystalline compound as a main component is desired to be an organic compound composed of elements of C, H and O only and having a molecular weight of not more than 1000, preferably an aliphatic compound or an alicyclic compound, particularly preferably a compound having a steroid skeleton and/or a hydroxyl group.

Abstract: It is an object of the present invention to provide a novel photo-curing composition which can be cured by light of a wide wavelength region including ultraviolet light or visible light, has such high sensitivity that it can be sufficiently cured by exposure to a small amount of light, can favorably form a fine pattern when used as a resist and provides a cured product having excellent heat resistance and insulating properties, and a negative photoresist composition using the photo-curing composition. It is another object of the present invention to provide a process for highly accurately and easily producing a polyimide thin film used for a medical instrument, and a medical instrument having the polyimide thin film. The photo-curing composition of the present invention comprises (A) a carbon cluster and/or its derivative, having a photosensitizing function, (B) a compound having plural heterocyclic rings in a molecule, and if necessary, (C) a photo-insensitive resin.

Abstract: The present invention relates to a method of temporarily and firmly fixing two solids to each other and to a composition used in the method, which is a method of temporarily fixing, comprising temporarily fixing the two solids to each other with a liquid crystal compound or a composition comprising the liquid crystal compound. This method is used for a method of temporarily fixing a pad for chemical mechanical polishing, for example, to polish a wafer for a semiconductor device fixed on a surface of a base plate, when one solid is a pad for chemical mechanical polishing of a wafer for a semiconductor device and the other is a base plate to fix the pad.

Abstract: The present invention relates to a method of temporarily and firmly fixing two solids to each other and to a composition used in the method, which is a method of temporarily fixing, comprising temporarily fixing the two solids to each other with a liquid crystal compound or a composition comprising the liquid crystal compound. This method is used for a method of temporarily fixing a pad for chemical mechanical polishing, for example, to polish a wafer for a semiconductor device fixed on a surface of a base plate, when one solid is a pad for chemical mechanical polishing of a wafer for a semiconductor device and the other is a base plate to fix the pad.

Abstract: A composition for forming a silicon.aluminum film, containing a silicon compound and an aluminum compound. The silicon.aluminum film is obtained by forming a coating film of the above composition and treating it with heat and/or light. The silicon.aluminum film can easily be formed from the above composition by the above method at a low cost without requiring an expensive vacuum apparatus or high-frequency wave generator.

Abstract: There is provided a method for forming wiring or an electrode by coating a substrate with a composition comprising (A) a complex of an amine compound and a hydrogenated aluminum compound and (B) a titanium compound or a composition comprising the complex and (C) metal particles and subjecting the obtained coating film to heating and/or a light treatment. By the method, a film can be formed that uses a conductive film forming composition with which wiring and an electrode that can be suitably used for electronic devices can be formed easily and inexpensively.

Abstract: There is provided a method for forming wiring or an electrode by coating a substrate with a composition comprising (A) a complex of an amine compound and a hydrogenated aluminum compound and (B) a titanium compound or a composition comprising the complex and (C) metal particles and subjecting the obtained coating film to heating and/or a light treatment. By the method, a film can be formed that uses a conductive film forming composition with which wiring and an electrode that can be suitably used for electronic devices can be formed easily and inexpensively.

Abstract: There are provided a conductive film forming composition capable of forming wiring or an electrode which can be suitably used in a variety of electronic devices, easily and inexpensively, a method for forming a film using the composition, a conductive film formed by the method, and wiring or an electrode which comprises the film. A conductive film forming composition comprising a complex of an amine compound and aluminum hydride and an organic solvent is applied on a substrate and then subjected to a heat treatment and/or irradiation with light, whereby a conductive film such as an electrode or wiring is produced.

Abstract: A composition capable of forming a metal ruthenium film and a ruthenium oxide film by a simple application/baking process, a process for forming a metal ruthenium film and a ruthenium oxide film from the composition, a metal ruthenium film and a ruthenium oxide film formed by the process, and electrodes formed of the films. A solution composition comprising a specific ruthenium complex. The coating film of this solution composition is heated in an atmosphere containing no oxygen or an atmosphere containing oxygen to form a metal ruthenium film or a ruthenium oxide film, respectively, and electrodes formed of the films.

Abstract: Provided is a method of forming a silicon thin-film which comprises a step of arranging in one or more parts of a liquid arranging surface liquid which contains a silicide comprising ring silane and/or a derivative thereof, such ring silane comprising silicon and hydrogen, and a step of forming a silicon thin-film by vaporizing silicide from liquid and supplying the silicide to a thin-film-forming surface.

Abstract: There is provided a method for forming wiring or an electrode by coating a substrate with a composition comprising (A) a complex of an amine compound and a hydrogenated aluminum compound and (B) a titanium compound or a composition comprising the complex and (C) metal particles and subjecting the obtained coating film to heating and/or a light treatment. By the method, a film can be formed that uses a conductive film forming composition with which wiring and an electrode that can be suitably used for electronic devices can be formed easily and inexpensively.

Abstract: The present invention relates to a method of temporarily and firmly fixing two solids to each other and to a composition used in the method, which is a method of temporarily fixing, comprising temporarily fixing the two solids to each other with a liquid crystal compound or a composition comprising the liquid crystal compound. This method is used for a method of temporarily fixing a pad for chemical mechanical polishing, for example, to polish a wafer for a semiconductor device fixed on a surface of a base plate, when one solid is a pad for chemical mechanical polishing of a wafer for a semiconductor device and the other is a base plate to fix the pad.

Abstract: There are provided a conductive film forming composition capable of forming wiring or an electrode which can be suitably used in a variety of electronic devices, easily and inexpensively, a method for forming a film using the composition, a conductive film formed by the method, and wiring or an electrode which comprises the film.

Abstract: Provided is a method of forming a silicon thin-film which comprises a step of arranging in one or more parts of a liquid arranging surface liquid which contains a silicide comprising ring silane and/or a derivative thereof, such ring silane comprising silicon and hydrogen, and a step of forming a silicon thin-film by vaporizing silicide from liquid and supplying the silicide to a thin-film-forming surface.

Abstract: A composition capable of forming a metal ruthenium film and a ruthenium oxide film by a simple application/baking process, a process for forming a metal ruthenium film and a ruthenium oxide film from the composition, a metal ruthenium film and a ruthenium oxide film formed by the process, and electrodes formed of the films.

Abstract: A positive-tone photosensitive resin composition for forming a thick film which is suitably used for photofabrication such as manufacture of circuit boards, a photosensitive resin film, and a method of forming a bump using the same. The photosensitive resin composition comprising (A) a novolac resin with a weight average molecular weight of 2,000-30,000, (B) a polyvinyl lower alkyl ether, (C) a polyphenol derivative compound with a molecular weight of 200-1,000, and (D) a compound containing a naphthoquinonediazido group.