Abstract: The present invention provides a hard coat film having excellent adhesion to a hard coat layer when a cycloolefin polymer film is used as a base material. The hard coat film of the present invention comprises a hard coat layer containing an ionizing radiation curable resin laminated on at least one surface of a cycloolefin polymer base film through a primer layer. This primer layer contains a modified polyolefin resin in which a polyolefin resin is graft-modified with an ?,?-unsaturated carboxylic acid or a derivative thereof, and a (meth)acrylic acid ester. In this modified polyolefin resin, the graft weight of the ?,?-unsaturated carboxylic acid or derivative thereof is 0.4 to 7 wt. % when the amount of the modified polyolefin resin is taken as 100 wt. %.

Abstract: A hard coat film having excellent adhesion (particularly adhesion over time) to a hard coat layer when a cycloolefin polymer film is used as a base material. The hard coat film comprises a hard coat layer containing an ionizing radiation curable resin laminated on at least one surface of a cycloolefin polymer base film via a primer layer. The primer layer has an arithmetic average surface roughness (Ra) in the range of 0.5 nm to 15.0 nm, and a surface of the primer layer has a static friction coefficient in the range of 0.6 to 2.0.

Abstract: The present invention provides a hard coat film having excellent adhesion to a hard coat layer when a cycloolefin polymer film is used as a base material. The hard coat film of the present invention comprises a hard coat layer containing an ionizing radiation curable resin laminated on at least one surface of a cycloolefin polymer base film through a primer layer. This primer layer contains a modified polyolefin resin in which a polyolefin resin is graft-modified with an ?,?-unsaturated carboxylic acid or a derivative thereof, and a (meth)acrylic acid ester. In this modified polyolefin resin, the graft weight of the ?,?-unsaturated carboxylic acid or derivative thereof is 0.4 to 7 wt. % when the amount of the modified polyolefin resin is taken as 100 wt. %.

Abstract: A hard coat film having excellent adhesion (particularly adhesion over time) to a hard coat layer when a cycloolefin polymer film is used as a base material. The hard coat film comprises a hard coat layer containing an ionizing radiation curable resin laminated on at least one surface of a cycloolefin polymer base film via a primer layer. The primer layer has an arithmetic average surface roughness (Ra) in the range of 0.5 nm to 15.0 nm, and a surface of the primer layer has a static friction coefficient in the range of 0.6 to 2.0.

Abstract: The present invention provides a hard coat film that is provided with a hard coat layer via an easy-bonding layer on at least one surface of a cycloolefin film, has excellent temporal adhesiveness under normal condition and under moisture and heat resistant condition, and has no crack occurrence under the heat resistant condition. A hard coat film 10 of the present invention is provided with a hard coat layer 3 via an easy-bonding layer 2 on at least one surface of a cycloolefin film 1. The easy-bonding layer 2 includes a mixture of a polyolefin based resin and a styrene-acryl based resin, and a blending ratio thereof is in the range of, for example, from 95/5 to 40/60. Further, the hard coat layer 3 includes an ionizing radiation curable resin having a weight-average molecular weight of 700 or larger and 3600 or smaller.

Abstract: A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches.

Abstract: A method for manufacturing a multiple-wavelength semiconductor laser comprises: forming a first bar having an array of first semiconductor chips, wherein at least two semiconductor lasers producing light of different wavelengths are monolithically formed; forming a second bar having an array of second semiconductor chips, wherein a semiconductor laser producing light having a different wavelength from the light produced by the semiconductor lasers of the first semiconductor chips is formed; forming a third bar by locating a laser-forming surface of said first bar facing a back surface of the second bar, and joining respective first semiconductor chips in the first bar to respective second semiconductor chips in the second bar; forming scribe lines by irradiating boundaries of the first semiconductor chips and boundaries of the second semiconductor chips with laser beams, and dividing the third bar along the scribe lines into respective chips.

Abstract: A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide. a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches.

Abstract: A semiconductor laser device includes a cavity extending in a propagation direction of a laser beam (X-direction). A front facet is on one end of the cavity through which the laser beam is emitted. A rear facet is on the other end of the cavity. Further, an adhesive layer and a coating film are on the front facet, and an adhesive layer and a coating film are on the rear facet. The adhesive layers preferably have a thickness of 10 nm or less and preferably include an anodic oxide film of one of Al, Ti, Nb, Zr, Ta, Si, and Hf.

Abstract: A semiconductor laser device includes a cavity extending in a propagation direction of a laser beam (X-direction). A front facet is on one end of the cavity through which the laser beam is emitted. A rear facet is on the other end of the cavity. An anodic oxide film is provided on at least one of the front facet and the rear facet, and the anodic oxide film preferably has a thickness of ?/4n or an odd integer multiple thereof, where ? is the wavelength of the laser beam and n is the refractive index of the anodic oxide film.

Abstract: A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches.

Abstract: A semiconductor laser device includes a cavity extending in a propagation direction of a laser beam (X-direction). A front facet is on one end of the cavity through which the laser beam is emitted. A rear facet is on the other end of the cavity. An anodic oxide film is provided on at least one of the front facet and the rear facet, and the anodic oxide film preferably has a thickness of ?/4n or an odd integer multiple thereof, where ? is the wavelength of the laser beam and n is the refractive index of the anodic oxide film.

Abstract: A semiconductor laser device includes a cavity extending in a propagation direction of a laser beam (X-direction). A front facet is on one end of the cavity through which the laser beam is emitted. A rear facet is on the other end of the cavity. Further, an adhesive layer and a coating film are on the front facet, and an adhesive layer and a coating film are on the rear facet. The adhesive layers preferably have a thickness of 10 nm or less and preferably include an anodic oxide film of one of Al, Ti, Nb, Zr, Ta, Si, and Hf.

Abstract: The semiconductor laser device includes an active layer, a p-type cladding layer, and a p-type cap layer. The layers are sequentially stacked so that the semiconductor laser device is provided. The p-type cap layer includes both a p-type dopant and an n-type dopant. In another aspect, the p-type cap layer includes a first layer including a first p-type dopant and a second layer including a second p-type dopant having a diffusion coefficient smaller than that of the first p-type dopant. The first layer is far from the active layer, and the second layer is close to the active layer. In further aspect, the p-type cap layer includes carbon (C) as a p-type dopant. According to these configuration, the p-type dopant can be prevented from being diffused in the active layer and the p-type cladding layer.

Abstract: In a semiconductor laser having a first facet (front facet) through which laser light is emitted and a second facet (rear facet), and a first coating film composed of a single-layer dielectric film on the first facet. The oscillating wavelength of the laser light is ? and the refractive index of the dielectric film is n. The thickness of the dielectric film is within a range between 5% and 50% of ?/4n.

Abstract: A semiconductor laser device has an n-GaAs substrate. On the n-GaAs substrate, by turns, are an n-AlGaInP cladding layer, an AlGaInP/GaInP MQW active layer, a p-AlGaInP first cladding layer, a single layer p-AlxGa1-xAs etching stopping layer, a p-AlGaInP second cladding layer with a stripe protrusion, and a p-GaAs contact layer. The portion, other than the stripe-form protrusion, of the p-AlGaInP second cladding layer is covered with an insulating film. The refractive index of the p-AlxGa1-xAs-ESL is nearly equal to the refractive index of each of the lower, first upper, and second upper cladding layers.

Abstract: A semiconductor laser device includes an optical fiber having an optical fiber grating formed therein, a semiconductor laser having an active layer with a single quantum well, for emitting laser light, and a coupling optical system for coupling the laser light emitted out of the semiconductor laser into the optical fiber. The coupling optical system can include a narrow-band filter for adjusting an incident angle of the laser light emitted out of the semiconductor laser. The optical fiber grating can have a reflection bandwidth wider than or substantially equal to a 3dB bandwidth of the gain of the semiconductor laser or a spectrum full width at half maximum of the laser light of the semiconductor laser.

Abstract: A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide. a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches.

Abstract: A semiconductor laser device includes a lower cladding layer of n-(Al0.66Ga0.34)0.5In0.5P, an active layer having a window structure which has a disordered MQW structure, a first upper cladding layer of p-(Al0.7Ga0.3)0.5In0.5P, and a second upper cladding layer of (Al0.66Ga0.34)0.5In0.5P sequentially disposed on an n-GaAs substrate. The refractive index of the first upper cladding layer is smaller than that of the lower cladding layer, and refractive index of the second upper cladding layer is larger than that of the first upper cladding layer and identical to that of the lower cladding layer. The position of peak light intensity at the window structure of the active layer coincides with or very closely approaches the position of the active layer.

Abstract: A semiconductor laser device includes an optical fiber having an optical fiber grating formed therein, a semiconductor laser having an active layer with a single quantum well, for emitting laser light, and a coupling optical system for coupling the laser light emitted out of the semiconductor laser into the optical fiber. The coupling optical system can include a narrow-band filter for adjusting an incident angle of the laser light emitted out of the semiconductor laser. The optical fiber grating can have a reflection bandwidth wider than or substantially equal to a 3 dB bandwidth of the gain of the semiconductor laser or a spectrum full width at half maximum of the laser light of the semiconductor laser.