Abstract: Memory card includes a circuit board, a component mounted on a main face of the circuit board, casing covering at least the main face of the circuit board and the component, and bittering agent retained in a roughened area provided on casing or an exposed part of the circuit board.

Abstract: Memory card includes a circuit board, a component mounted on a main face of the circuit board, casing covering at least the main face of the circuit board and the component, and bittering agent retained in a roughened area provided on casing or an exposed part of the circuit board.

Abstract: A process for the production of fullerenes by which a high-purity fullerene can be separated at high productivity from a mixture comprising a fullerene, a polycyclic aromatic hydrocarbon component, and a carbonaceous polymeric component and which comprises the step (A) of preparing a mixture comprising a fullerene, a polycyclic aromatic hydrocarbon component, and a carbonaceous polymeric component, the step (B) of separating this mixture into a polycyclic aromatic hydrocarbon component and a mixture of a fullerene and a carbonaceous polymeric component, and the step (C) of separating this mixture into a fullerene and a carbonaceous polymeric component.

Abstract: The present invention relates to a base metal conductor multilayered substrate capable of being integral with thick film components such as thick film resistors and to a method for producing such substrate.

Abstract: The present invention provides a voltage-dependent resistor of the bulk-type in which zinc oxide (ZnO) powder and additives are admixed to form a sintered body composition having as the main constituent, zinc oxide, and in which the mixture is formed into a resistor body, the body is sintered, and electrodes are applied to the opposite surfaces of the sintered body, the improvement comprising the step of, prior to sintering and admixture with said zinc oxide, admixing all amount of boron oxide (B.sub.2 O.sub.3) with other additives in the form of a borosilicate glass, which is composed of 5 to 30 weight percent of boron oxide (B.sub.2 O.sub.3) and 70 to 95 weight percent of silicon oxide (SiO.sub.2). A process for the production of said resistor is also provided.

Abstract: A voltage-dependent resistor of the layered structure type is provided by employing the nonohmic property of the hetero-junction between a zinc oxide layer and a metal oxide layer consisting essentially of at least one member selected from the group consisting of cobalt oxide, manganese oxide, barium oxide, strontium oxide, lead oxide and rare earth oxides.