Abstract: A delivery district allocation device obtains an allocation setting value for delivery districts in a delivery area, the allocation setting value being an index value of a ratio of allocation to two delivery entities. The delivery district allocation device allocates each of district groups to one of the two delivery entities based on the obtained allocation setting value, the district groups being groups of a part of the delivery districts.

Abstract: To provide an analysis apparatus an analysis method, and an analysis program each adapted to extract information about the molecular structures from the molecular vibration spectra. An analysis device includes an acquisition unit configured to analyze, by applying a combinatorial optimization technique using the Ising model, a molecular vibration spectrum of each of a plurality of organic molecules including a plurality of first organic molecules and second organic molecule serving as a reference for analyzing a molecule structure of each of the plurality of the first organic molecules, and to acquire information about a molecular structure of each of the plurality of the first organic molecules.

Abstract: An ion implantation apparatus performs a plurality of ion implantation processes having different implantation conditions to a same wafer successively. The plurality of ion implantation processes are: (a) provided so that twist angles of the wafer differ from each other; (b) configured so that an ion beam is irradiated to a wafer surface to be processed that moves in a reciprocating movement direction; and (c) provided so that a target value of a beam current density distribution of the ion beam is variable in accordance with a position of the wafer in the reciprocating movement direction. Before performing the plurality of ion implantation processes to the same wafer successively, a control device executes a setup process in which a plurality of scanning parameters corresponding to the respective implantation conditions of the plurality of ion implantation processes are determined collectively.

Abstract: A power generation system of the invention includes: generator (11), secondary battery (12) and control unit (13). The control unit (13) discharges secondary battery (12) to supply electric power from secondary battery (12) to load (20) when the state of charge of secondary battery (12) has reached the upper limit capacity, activates generator (11) so as to supply part of the power from the generator to load (20) while charging secondary battery (12) with surplus power when the state of charge reaches the lower limit capacity, and stops generator (11) and switches the power supply source for load (20) from generator (11) to secondary battery (12) when the state of charge reaches the upper limit capacity, whereby the control unit keeps generator (11) at the maximum power generation efficiency or at the rated output when generator (11) is being operated.

Abstract: An ion implantation method includes transporting ions to a wafer as an ion beam, causing the wafer to undergo wafer mechanical slow scanning and also causing the ion beam to undergo beam fast scanning or causing the wafer to undergo wafer mechanical fast scanning in a direction perpendicular to a wafer slow scanning direction, irradiating the wafer with the ion beam by using the wafer slow scanning in the wafer slow scanning direction and the beam fast scanning of the ion beam or the wafer fast scanning of the wafer in the direction perpendicular to the wafer slow scanning direction, measuring a two-dimensional beam shape of the ion beam before ion implantation into the wafer, and defining an implantation and irradiation region of the ion beam by using the measured two-dimensional beam shape to thereby regulate the implantation and irradiation region.

Abstract: An ion implantation apparatus performs a plurality of ion implantation processes having different implantation conditions to a same wafer successively. The plurality of ion implantation processes are: (a) provided so that twist angles of the wafer differ from each other; (b) configured so that an ion beam is irradiated to a wafer surface to be processed that moves in a reciprocating movement direction; and (c) provided so that a target value of a beam current density distribution of the ion beam is variable in accordance with a position of the wafer in the reciprocating movement direction. Before performing the plurality of ion implantation processes to the same wafer successively, a control device executes a setup process in which a plurality of scanning parameters corresponding to the respective implantation conditions of the plurality of ion implantation processes are determined collectively.

Abstract: On a plane of a semiconductor wafer, two types of in-plane regions comprising full-width non-ion-implantation regions and partial ion implantation regions, which are alternately arranged one or more times in a direction orthogonal to a scanning direction of an ion beam are created. During the creation of the partial ion implantation regions, reciprocating scanning using the ion beam can be repeated until the target dose can be satisfied while performing or stopping ion beam radiation onto the semiconductor wafer in a state in which the semiconductor wafer can be fixed. During the creation of the full-width non-ion-implantation regions, the semiconductor wafer can be moved without performing the ion beam radiation onto the semiconductor wafer. Then, by repeating fixing and movement of the semiconductor wafer plural times, ion implantation regions and non-ion-implantation regions are created in desired regions of the semiconductor wafer.

Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to a beam scanning direction, and implanting ions into the wafer. The wafer is divided into a plurality of implantation regions, a beam scanning speed in the beam scanning direction is set to be varied for each of the implantation regions, an ion implantation amount distribution for each of the implantation regions is controlled by changing and controlling the beam scanning speed, and the ion implantation amount for each of the implantation regions is controlled and a beam scanning frequency and a beam scanning amplitude in the control of the beam scanning speed for each of the implantation regions is made to be constant by setting a wafer mechanical scanning speed and controlling the wafer mechanical scanning speed for each of the implantation regions.

Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to a beam scanning direction, and implanting ions into the wafer. The wafer is divided into a plurality of implantation regions, a beam scanning speed in the beam scanning direction is set to be varied for each of the implantation regions, an ion implantation amount distribution for each of the implantation regions is controlled by changing and controlling the beam scanning speed, and the ion implantation amount for each of the implantation regions is controlled and a beam scanning frequency and a beam scanning amplitude in the control of the beam scanning speed for each of the implantation regions is made to be constant by setting a wafer mechanical scanning speed and controlling the wafer mechanical scanning speed for each of the implantation regions.

Abstract: An oxygen reduction catalyst and the catalyst as an electrode catalyst are provided. The oxygen reduction catalyst is characterized by including an organometallic polymer structure in which a transition metal or zinc is coordinated with an organic polymer compound including a ligand comprising a heterocyclic 5-membered ring or a heterocyclic 6-membered ring containing at least not less than two elements selected from nitrogen (N), oxygen (O), sulfur (S), and selenium (Se), and derivatives thereof. Thereby, even when an amount of a metal is smaller than that in a platinum particulate catalyst, an oxygen reduction capacity equal to or more than that of the platinum particulate catalyst can be obtained. Further, by coordinating a metal with an organic polymer, stability in an oxygen reduction condition can be significantly improved compared to the case of metal based macrocyclic compounds.

Abstract: A route guidance device is provided that directs a user to an optimum route according to changing traffic conditions. The route guidance device includes a map information storage unit, a site information storage unit, a site-to-site information storage unit, a site information-receiving unit, a site-to-site information input unit, and an optimum route extraction unit. The map information storage unit stores in advance map information that includes information regarding distances along roads on a map and the time required to travel on these roads. The site information-receiving unit receives from a user terminal, via the Internet, site information which is information indicating a plurality of sites that are to be visited, and stores the received site information in the site information storage unit.