Abstract: A light emitting element comprises a GaP substrate and a mesa portion. The GaP substrate includes a major surface inclined to the <011> direction from the {100} plane and a side surface covered with inequalities substantially. The mesa portion has a light emitting multi-layer of InGaAlP based material provided on the major surface. A part of a light emitted from the light emitting multi-layer is extracted through the side surface of the GaP substrate.

Abstract: Disclosed is a semiconductor light emitting device comprising: a substrate having first and second major surfaces and being translucent to light in a first wavelength band; and a semiconductor stacked body provided on the first major surface and including a light emitting layer that emits light in the first wavelength band. A side face of the substrate has a recess. A cross section located between the first and second major surfaces is substantially smaller than the first and second major surfaces.

Abstract: A first semiconductor light emitting device includes: a transparent substrate; a light emitting layer; and a roughened region. The transparent substrate has a first major surface and a second major surface, and is translucent to light in a first wavelength band. The light emitting layer is selectively provided in a first portion on the first major surface of the transparent substrate and configured to emit light in the first wavelength band. The roughened region is provided in a second portion different from the first portion on the first major surface. A second semiconductor light emitting device includes: a transparent substrate; a light emitting layer; a first electrode; and at least one groove. The groove is provided on the second major surface of the transparent substrate and extends from a first side face to a second side face opposing the first side face of the transparent substrate.

Abstract: A semiconductor light emitting device comprises: a substrate; a semiconductor stacked structure; a first electrode; a second electrode; and a reflective film. The substrate has a top face and a rear face electrode forming portion opposed thereto, and is translucent to light in a first wavelength band. The rear face electrode forming portion is surrounded by a rough surface. The semiconductor stacked structure is provided on the top face of the substrate and includes an active layer that emits light in the first wavelength band. The first electrode is provided on the semiconductor stacked structure, and the second electrode is provided on the rear face electrode forming portion. The reflective film is coated on at least a portion of the rough surface.

Abstract: A first semiconductor light emitting device comprises: a transparent substrate; a light emitting layer; and a roughened region. The transparent substrate has a first major surface and a second major surface, and is translucent to light in a first wavelength band. The light emitting layer is selectively provided in a first portion on the first major surface of the transparent substrate and configured to emit light in the first wavelength band. The roughened region is provided in a second portion different from the first portion on the first major surface. A second semiconductor light emitting device comprises: a transparent substrate; a light emitting layer; a first electrode; and at least one groove. The groove is provided on the second major surface of the transparent substrate and is extending from a first side face to a second side face opposing the first side face of the transparent substrate.

Abstract: A semiconductor light emitting device comprises: a substrate; a semiconductor stacked structure; a first electrode; a second electrode; and a reflective film. The substrate has a top face and a rear face electrode forming portion opposed thereto, and is translucent to light in a first wavelength band. The rear face electrode forming portion is surrounded by a rough surface. The semiconductor stacked structure is provided on the top face of the substrate and includes an active layer that emits light in the first wavelength band. The first electrode is provided on the semiconductor stacked structure, and the second electrode is provided on the rear face electrode forming portion. The reflective film is coated on at least a portion of the rough surface.

Abstract: Disclosed is a semiconductor light emitting device comprising: a substrate having first and second major surfaces and being translucent to light in a first wavelength band; and a semiconductor stacked body provided on the first major surface and including a light emitting layer that emits light in the first wavelength band. A side face of the substrate has a recess. A cross section located between the first and second major surfaces is substantially smaller than the first and second major surfaces.

Abstract: A semiconductor light emitting device comprises: a substrate; a light emitting layer; and an ohmic electrode. The substrate has first and second major surfaces and being transparent to light in a first wavelength band. The light emitting layer is provided above the first major surface of the substrate, and the light emitting layer emits light in the first wavelength band. The ohmic electrode is selectively embedded on the second major surface of the substrate and has a surface substantially coplanar with the second major surface.

Abstract: A first semiconductor light emitting device comprises: a transparent substrate; a light emitting layer; and a roughened region. The transparent substrate has a first major surface and a second major surface, and is translucent to light in a first wavelength band. The light emitting layer is selectively provided in a first portion on the first major surface of the transparent substrate and configured to emit light in the first wavelength band. The roughened region is provided in a second portion different from the first portion on the first major surface. A second semiconductor light emitting device comprises: a transparent substrate; a light emitting layer; a first electrode; and at least one groove. The groove is provided on the second major surface of the transparent substrate and is extending from a first side face to a second side face opposing the first side face of the transparent substrate.

Abstract: A light emitting element comprises a GaP substrate and a mesa portion. The GaP substrate includes a major surface inclined to the <011> direction from the {100} plane and a side surface covered with inequalities substantially. The mesa portion has a light emitting multi-layer of InGaAlP based material provided on the major surface. A part of a light emitted from the light emitting multi-layer is extracted through the side surface of the GaP substrate.