Abstract: A semiconductor pressure sensor is provided that includes a diaphragm, a resistive element arranged at an upper portion of the diaphragm, an insulating film arranged on an upper face of the resistive element and an upper face of the diaphragm, a via that penetrates through a portion of the insulating film and comes into contact with the resistive element, and wiring that is electrically connected to the resistive element through the via. The insulating film includes a concave portion having a bottom face that is substantially flat. The wiring is arranged on the bottom face of the concave portion, and the depth of the concave portion is substantially equal to the thickness of the wiring.

Abstract: A semiconductor pressure sensor includes a diaphragm; a resistor provided on a top surface of the diaphragm; an insulating film formed on the diaphragm and the resistor having a penetrating part exposing a top surface of the resistor; and a wiring pattern formed from the top surface of the resistor exposed by the penetrating part to a top surface of the insulating film; wherein a distance between a first crossing part where a plane orthogonal to the top surface of the diaphragm meets a top end of a side plane of the penetrating part and a second crossing part where the plane orthogonal to the top surface of the diaphragm meets a bottom of the side plane of the penetrating part is equal or greater than a thickness of the insulating film by a factor of a square root of two.

Abstract: A semiconductor pressure sensor includes a diaphragm; a resistor provided on a top surface of the diaphragm; an insulating film formed on the diaphragm and the resistor having a penetrating part exposing a top surface of the resistor; and a wiring pattern formed from the top surface of the resistor exposed by the penetrating part to a top surface of the insulating film; wherein a distance between a first crossing part where a plane orthogonal to the top surface of the diaphragm meets a top end of a side plane of the penetrating part and a second crossing part where the plane orthogonal to the top surface of the diaphragm meets a bottom of the side plane of the penetrating part is equal or greater than a thickness of the insulating film by a factor of a square root of two.

Abstract: A semiconductor pressure sensor is provided that includes a diaphragm, a resistive element arranged at an upper portion of the diaphragm, an insulating film arranged on an upper face of the resistive element and an upper face of the diaphragm, a via that penetrates through a portion of the insulating film and comes into contact with the resistive element, and wiring that is electrically connected to the resistive element through the via. The insulating film includes a concave portion having a bottom face that is substantially flat. The wiring is arranged on the bottom face of the concave portion, and the depth of the concave portion is substantially equal to the thickness of the wiring.

Abstract: A carburizing steel having the following chemical composition:C: 0.1 to 0.25%,Si: 0.2 to 0.4%,Mn: 0.3 to 0.9%,P: 0.02% or less,S: 0.001 to 0.15%,Cr: 0.5 to 0.9%,Mo: 0.15 to 1%,Al: 0.01 to 0.1%,B: 0.0005 to 0.009%,N: less than 0.006%, andthe balance of Fe and incidental impurities, wherein % is on a weight basis. Also disclosed are a method for the manufacture of the carburizing steel, parts of constant velocity universal joints for drive shafts made of the carburizing steel, as well as a method for the manufacture of such parts. The carburizing steel may further contain Ni: 0.3-4.0%, and one or more elements selected from the group consisting of Ti, Nb, V and Zr: 0.01-0.3% for each. The parts of constant velocity universal joints for drive shafts are manufactured using the carburizing steel of the present invention as a material. When they are carburized and quenched, they exhibit a surface hardness (Hv) of 650-800, core hardness (Hv) of 250-450, and carburized case depth of 0.2-1.2 mm.

Abstract: A semiconductor integrated circuit device is provided in which an interlayer insulation film deposited on a semiconductor chip includes a boron-containing silicon oxide film and a second film deposited on the boron-containing silicon oxide film. A guard ring is disposed adjacent to the periphery of the semiconductor chip, and a slit is disposed between the guard ring and the periphery of the chip. The depth of the slit is selected such that cracks formed on the boundary between the BPSG film and the second film are inhibited by the slit from intruding further along the boundary to the inside of the chip, thereby preventing moisture or obstacles from reaching the inside of the chip through the cracks.

Abstract: A carburizing steel having the following chemical composition:C: 0.1 to 0.25%,Si: 0.2 to 0.4%,Mn: 0.3 to 0.9%,P: 0.02% or less,S: 0.001 to 0.15%,Cr: 0.5 to 0.9%,Mo: 0.15 to 1%,Al: 0.01 to 0.1%,B: 0.0005 to 0.009%,N: less than 0.006%, andthe balance of Fe and incidental impurities, wherein % is on a weight basis. Also disclosed are a method for the manufacture of the carburizing steel, parts of constant velocity universal joints for drive shafts made of the carburizing steel, as well as a method for the manufacture of such parts. The carburizing steel may further contain Ni: 0.3-4.0%, and one or more elements selected from the group consisting of Ti, Nb, V and Zr: 0.01-0.3% for each.

Abstract: A semiconductor memory device has memory cells provided at intersections between word line conductors and data line conductors. Each of the memory cells includes a cell selecting transistor and an information storage capacitor. The capacitor in each of the memory cells includes a first capacitor component formed over the control electrode of the transistor and a second capacitor component formed over a word line conductor which is adjacent to a word line conductor integral with the control electrode of the transistor. Each of the first and second capacitor components has a common electrode, a storage electrode and a dielectric film sandwiched therebetween, and the storage electrode is at a level higher than the common electrode in each of said first and second capacitor components. The storage electrodes of the first and second capacitor components are electrically connected with each other and with one of the semiconductor regions of the transistor.

Abstract: A high tensile strength, low yield ratio steel member has a steel composition consisting essentially of, by weight:C: 0.15-0.40%, Si: 0.10-0.70%, Mn: 1.0-2.7%,Cr: 1.0-3.5%, sol.Al: 0.01-0.05%,P: not larger than 0.025%, S: not larger than 0.015%,Mo: 0-1.0% Ni: 0-2.5%,V: 0-0.10%, Ti: 0-0.10%, Nb: 0-0.10%,B: 0-0.0050%.Fe and incidental impurities: balance the below-described bainite index (%) of the steel composition being 0-50%, the steel being comprised of a single phase of martensite or a martensite and bainite duplex structure containing 50% or less of bainite.Bainite Index (%)=-209 C+43Si-48Mn-58Cr-0.416R+317wherein R is a cooling rate (.degree.C./min).

Abstract: A high tensile strength, low yield ratio steel member has a steel composition consisting essentially of, by weight:C: 0.15-0.40%, Si: 0.10-0.70%, Mn: 1.0-2.7%,Cr: 1.0-3.5%, sol.Al: 0.01-0.05%,P: not larger than 0.025%, S: not larger than 0.015%,Mo: 0-1.0%, Ni: 0-2.5%,V: 0-0.10%, Ti: 0-0.10%, Nb: 0-0.10%,B: 0-0.0050%.Fe and incidental impurities: balance the below-described bainite index (%) of the steel composition being 0-50%, the steel being comprised of a single phase of martensite or a martensite and bainite duplex structure containing 50% or less of bainite.Bainite Index (%)=-209C+43Si-48Mn-58Cr-0.416R+317wherein R is a cooling rate (.degree.C./min).