Abstract: A resin encapsulated semiconductor element is encapsulated with resin composition containing an organic compound selected from the group consisting of organobromine compounds, organophosphorus compounds and organonitrogen compounds, an inorganic filler, and a metal borate. The obtained resin encapsulated semiconductor element has the same flame resistance as a conventional semiconductor element which is encapsulated with a resin composition containing a halogen and antimony compound, and furthermore, has remarkably improved reliabilities regarding moisture resistance and storing at a high temperature by effects of the contained metal borate for suppressing generation of or trapping released gas components, such as halogen or phosphorus, and others.

Abstract: The phenol resin molding composition used in the present invention is obtained by subjecting a resol-type phenol resin to purification until, when the resin is extracted by heating with 10 times the amount of hot water at 120.degree. C. for 100 hours or more, the extract has an electric conductivity of 100 .mu.S/cm or less, a pH of 4-7 and a halogen ion content of 10 ppm or less, then preparing a composition comprising a resin component consisting of said resol-type phenol resin and a cure rate controlling agent incorporated therewith, optionally incorporating a filler into said composition, kneading the resulting mixture, and then grinding the kneaded mixture. The composition has a good moldability and, when used for resin-sealing of electronic devices or semiconductor devices and transfer-molding of electronic devices using resin, exhibits an excellent adhesive property, electric properties, moisture resistance and heat resistance.