Patents by Inventor Yasuhide Uemura

Yasuhide Uemura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8721909
    Abstract: A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further contains at least one of a chelating agent and an abrasive grain. The water soluble polymer preferably has a weight average molecular weight of 6,000 to 4,000,000. The polishing composition is mainly used in polishing of the surfaces of semiconductor wafers such as silicon wafers, especially used in preliminary polishing of the surfaces of such wafers.
    Type: Grant
    Filed: October 19, 2012
    Date of Patent: May 13, 2014
    Assignee: Fujimi Incorporated
    Inventor: Yasuhide Uemura
  • Publication number: 20120138851
    Abstract: A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further contains at least one of a chelating agent and an abrasive grain. The water soluble polymer preferably has a weight average molecular weight of 6,000 to 4,000,000. The polishing composition is mainly used in polishing of the surfaces of semiconductor wafers such as silicon wafers, especially used in preliminary polishing of the surfaces of such wafers.
    Type: Application
    Filed: February 8, 2012
    Publication date: June 7, 2012
    Applicant: FUJIMI INCORPORATED
    Inventor: Yasuhide Uemura
  • Patent number: 7867909
    Abstract: A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further contains at least one of a chelating agent and an abrasive grain. The water soluble polymer preferably has a weight average molecular weight of 6,000 to 4,000,000. The polishing composition is mainly used in polishing of the surfaces of semiconductor wafers such as silicon wafers, especially used in preliminary polishing of the surfaces of such wafers.
    Type: Grant
    Filed: August 23, 2007
    Date of Patent: January 11, 2011
    Assignee: Fujimi Incorporated
    Inventor: Yasuhide Uemura
  • Publication number: 20090137123
    Abstract: A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further contains at least one of a chelating agent and an abrasive grain. The water soluble polymer preferably has a weight average molecular weight of 6,000 to 4,000,000. The polishing composition is mainly used in polishing of the surfaces of semiconductor wafers such as silicon wafers, especially used in preliminary polishing of the surfaces of such wafers.
    Type: Application
    Filed: January 27, 2009
    Publication date: May 28, 2009
    Applicant: FUJIMI INCORPORATED
    Inventor: Yasuhide Uemura
  • Publication number: 20080051010
    Abstract: A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further contains at least one of a chelating agent and an abrasive grain. The water soluble polymer preferably has a weight average molecular weight of 6,000 to 4,000,000. The polishing composition is mainly used in polishing of the surfaces of semiconductor wafers such as silicon wafers, especially used in preliminary polishing of the surfaces of such wafers.
    Type: Application
    Filed: August 23, 2007
    Publication date: February 28, 2008
    Inventor: Yasuhide UEMURA
  • Publication number: 20060090402
    Abstract: A polishing composition contains colloidal silica, potassium hydroxide, potassium bicarbonate, and water. The content of colloidal silica in the polishing composition is 2 % by mass or more. The average particle size of secondary particles of colloidal silica included in the polishing composition is preferably 60 nm or less. The polishing composition is suitable for use in polishing a semiconductor substrate.
    Type: Application
    Filed: October 27, 2005
    Publication date: May 4, 2006
    Inventor: Yasuhide Uemura