Abstract: The objective of the present invention is to provide a high-sensitivity molecular detecting device using metal ion encapsulated fullerene capable of detection even at ppt level concentrations. This high-sensitivity molecular detecting device using metal ion encapsulated fullerene includes a container having an introduction port for introducing detected molecule into the main body of the container, complex of dye and metal ion encapsulated fullerene contained inside the container, a pair of electrodes, a light radiating means for irradiating the inside of the container with light, and an ammeter for measuring a current flowing between the electrodes; and an electron orbit energy level is set such that there is no electron movement in a ground state without light irradiation, and electron separated from the detected molecule moves into vacancy generated by means of an excitation in an excited state resulting from light irradiation.

Abstract: An electric double-layer capacitor is provided which is larger in electrostatic capacitance, and can be much higher in rated voltage, than that in the prior art using a liquid electrolyte solely composed of an ionic liquid. Having an electrolyte and electrodes, the capacitor incorporates an atom encapsulated fullerene or an atom encapsulated fullerene salt in the electrolyte. The electrolyte can either be a liquid solution or a solid. With the electrolyte being a solid, cations of the atom encapsulated fullerene or atom encapsulated fullerene salt may either be made movable or static in the electrolyte.

Abstract: Provided is a hole-blocking layer which has excellent basic characteristics such as high photoelectric conversion efficiency, while exhibiting excellent productivity. The hole-blocking layer is produced by a process that has a step of bringing an aqueous solution containing hydrogen peroxide and titanium (IV) oxysulfate into contact with the surface of a member on which the hole-blocking layer is to be formed, and holding the contact between the aqueous solution and the member at 50 to 120° C., so that an amorphous titanium oxide precursor precipitates on the surface of the member; and a step of drying the amorphous titanium oxide precursor that has precipitated on the member.

Abstract: An electric double-layer capacitor is provided which is larger in electrostatic capacitance, and can be much higher in rated voltage, than that in the prior art using a liquid electrolyte solely composed of an ionic liquid. Having an electrolyte and electrodes, the capacitor incorporates an atom encapsulated fullerene or an atom encapsulated fullerene salt in the electrolyte. The electrolyte can either be a liquid solution or a solid. With the electrolyte being a solid, cations of the atom encapsulated fullerene or atom encapsulated fullerene salt may either be made movable or static in the electrolyte.

Abstract: A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.

Abstract: A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.

Abstract: In order to isolate and purify an endohedral fullerene, a solvent washing was performed using toluene to concentrate the endohedral fullerene in a residual, but endohedral fullerene could not be efficiently purified because impurities other than the endohedral fullerene could not be sufficiently removed. Thus, the endohedral fullerene is isolated and purified by using a solvent such as chloronaphthalene or tetralin having a high solubility for the endohedral fullerene and concentrating the endohedral fullerene in the solvent. The endohedral fullerene isolated and purified by solvent extraction has a cluster structure where the endohedral fullerene is surrounded with empty fullerenes. Thus, this endohedral fullerene is highly stable and is a useful material applicable to various fields such as medical care and electronics.

Abstract: Provided is a hole-blocking layer which has excellent basic characteristics such as high photoelectric conversion efficiency, while exhibiting excellent productivity. The hole-blocking layer is produced by a process that has a step of bringing an aqueous solution containing hydrogen peroxide and titanium (IV) oxysulfate into contact with the surface of a member on which the hole-blocking layer is to be formed, and holding the contact between the aqueous solution and the member at 50 to 120° C., so that an amorphous titanium oxide precursor precipitates on the surface of the member; and a step of drying the amorphous titanium oxide precursor that has precipitated on the member.

Abstract: An element capable of manufacturing various devices of any shape having plasticity or flexibility without being limited by shape and a method for manufacturing thereof are provided. An element characterized by that a circuit element is formed continuously or intermittently in the longitudinal direction. An element characterized by that a cross section having a plurality of areas forming a circuit is formed continuously or intermittently in the longitudinal direction.

Abstract: A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.

Abstract: A sensor whose size can be decreased without marring the performance and which can be installed in a narrow place, an electric device, and a method for easily manufacturing the electric device. By vacuum deposition of semiconductor on a columnar body or by applying a melt, solution, or gel of semiconductor to the columnar body, a coating of semiconductor is formed. Four insulating wires, a stripe band of the connected four insulating wires are wound around the columnar body. Then, one of the insulating wires is removed to form a copper wire in the vacant portion by copper vacuum deposition. Lastly, another insulating wire not adjacent to the copper wire is removed to form an aluminum wire in the vacant portion by aluminum vacuum deposition. By measuring the resistance between the copper and aluminum wires, the intensity of light striking the semiconductor can be determined.

Abstract: Integrated circuits such as semiconductor memories, image sensors, PLA's, and the like have been formed on rigid, planar substrates such as silicon substrates. This has resulted in shapes without flexibility and limited applicabilities. Further, since multiple circuit elements are continuously formed on a flat surface, it has been impossible to produce a non-defective semiconductor memory unless all the circuit elements are fabricated without defects, making it difficult to improve a yield. It is thus devised to weave or braid linear devices into a fabric shape to prepare a planar semiconductor memory, or to bundle up linear devices to prepare a linear semiconductor memory. The integrated circuit comprising the linear devices is flexible and light-weighted, and is thus usable in various applications. It becomes possible to prepare an integrated circuit by once fabricating linear devices and selecting only non-defective ones therefrom, thereby enabling an improved production yield of integrated circuits.

Abstract: A light-emitting element used for display devices and illuminating devices has been formed on a flat substrate, and therefore, when the size of such devices is increased, manufacturing apparatuses also have to be enlarged. Also, a problem involved has been that even a failure of one light-emitting element causes the entire device to fail, making improvement of production yield difficult. To solve the above problems, in the present invention, light-emitting elements are formed as linear elements, and the linear elements are combined to form a plane light-emitting device. This enables the light-emitting device to be produced by selecting only linear light-emitting elements of good quality, and enlargement of apparatuses and enhancement of production yield can be expected.

Abstract: A light-emitting element used for display devices and illuminating devices has been formed on a flat substrate, and therefore, when the size of such devices is increased, manufacturing apparatuses also have to be enlarged. Also, a problem involved has been that even a failure of one light-emitting element causes the entire device to fail, making improvement of production yield difficult. To solve the above problems, in the present invention, light-emitting elements are formed as linear elements, and the linear elements are combined to form a plane light-emitting device. This enables the light-emitting device to be produced by selecting only linear light-emitting elements of good quality, and enlargement of apparatuses and enhancement of production yield can be expected.

Abstract: Fullerenes are a novel material that has been expected to serve as a promising material in the construction of organic devices. However, the electric conductivity of fullerenes, which has been, reported heretofore spreads over a wide range including values corresponding to insulators as well as those corresponding to semiconductors. The present invention makes it possible to improve the conductivity of fullerenes highly reproducibly by heating the fullerenes at a specified temperature in an inert gas which is flowed under a specified condition, that is, by controlling the concentration of impurities, particularly oxygen and water adsorbed to the fullerenes.

Abstract: An element capable of manufacturing various devices of any shape having plasticity or flexibility without being limited by shape and a method for manufacturing thereof are provided. An element characterized by that a circuit element is formed continuously or intermittently in the longitudinal direction. An element characterized by that a cross section having a plurality of areas forming a circuit is formed continuously or intermittently in the longitudinal direction.

Abstract: Organic materials doped with alkali metal have been conventionally used for electron transport layers or electron injection layers which constitute light-emitting films in organic EL light-emitting elements which are used in display devices or illuminating devices. Such conventional organic materials involve problems such that a strict process control is required since the alkali metal is highly reactive and thus, likely to be formed into a hydroxide, such that the resulting light-emitting element or light-emitting device needs complete sealing, and such that life of the light-emitting element cannot be sufficiently long. The present invention uses an alkali metal-including fullerene or an organic material doped with an alkali metal-including fullerene for electron transport layers or electron injection layers which constitute light-emitting films in organic EL light-emitting elements.

Abstract: A second housing whose center portion is depressed and whose end portion around the center portion is formed like a visor is arranged around a first housing whose center portion is depressed and whose end portion around the center portion is formed like a visor, and a hollow portion is formed between the first housing and the second housing by sandwiching a packing between the end portions of the housings. Further, degassed water for preventing empty heating is filled in the hollow portion, and an ultrasonic transducer is placed on the surface of the center portion of the first housing. A weight for preventing the vibration of the wall is provided on the wall surface of the second housing. Since the vibration of the wall of the housing is suppressed by the weight, vibration energy returns toward the bottom surface of the center of the housing through water and is radiated from the bottom surface efficiently as ultrasonic waves.

Abstract: The wet treatment liquid feed nozzle of the invention comprises an introducing path having an introducing port, a discharging path having a discharging port, a crossing section formed by causing the introducing path and the discharging path to cross at the other ends thereof, a nozzle assembly having an opening section opening to an object to be treated, provided at the crossing section, and pressure control means, for controlling the difference between the pressure of the wet treatment liquid in contact with the object to be treated and the atmospheric pressure provided at least on the discharging path side so that the wet treatment liquid having been in contact with the object to be treated via the opening section does not flow to outside the discharging path.

Abstract: The wet treatment liquid feed nozzle of the invention comprises an introducing path 10 having an introducing port 7, a discharging path 12 having a discharging port 15, a crossing section 14 formed by causing the introducing path 10 and the discharging path 12 to cross at the other ends thereof, a nozzle assembly 50 having an opening section 6 opening to an object to be treated 1, provided at the crossing section 14, and pressure control means 13, for controlling the difference between the pressure of the wet treatment liquid in contact with the object to be treated 1 and the atmospheric pressure provided at least on the discharging path 12 side so that the wet treatment liquid having been in contact with the object to be treated 1 via the opening section 6 does not flow to outside the discharging path 12.